PD - 95036
IRGR3B60KD2PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
V
CES
= 600V
I
C
= 4.2A, T
C
=100°C
G
E
t
sc
> 10µs, T
J
=150°C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel
V
CE(on)
typ. = 1.9V
D-Pak
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ Tc = 25°C
I
F
@ Tc = 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Max.
600
7.8
4.2
15.6
15.6
6.0
3.2
15.6
±20
52
21
-55 to +150
Units
V
A
c
Diode Continous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
V
W
P
D
@ T
C
= 100°C Maximum Power Dissipation
Operating Junction and
T
J
T
STG
Storage Temperature Range
Soldering Temperature Range, for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
R
θJC
R
θJC
R
θJA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Junction-to-Ambient, (PCB Mount)
Weight
Min.
–––
Typ.
–––
–––
–––
0.3
Max.
2.4
8.8
50
–––
Units
°C/W
d
–––
–––
–––
g
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1
2/23/04
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
—
0.32
1.9
2.2
4.5
-8.5
1.9
1.0
200
1.5
1.5
—
—
—
2.4
2.6
5.5
—
—
150
500
1.8
1.8
±100
IRGR3B60KD2PbF
Conditions
Ref.Fig.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
—
V
CE(on)
Collector-to-Emitter Voltage
—
—
V
GE(th)
Gate Threshold Voltage
3.5
∆V
GE(th)
/∆T
J
Threshold Voltage temp. coefficient
—
gfe
I
CES
V
FM
I
GES
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
—
—
—
—
—
—
V V
GE
= 0V, I
C
= 500µA
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
I
C
= 3.0A, V
GE
= 15V
V
I
C
= 3.0A, V
GE
= 15V, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250µA
5,6,7
9,10,11
9,10,11
12
mV/°C V
CE
= V
GE
, I
C
= 1mA (25°C-150°C)
S V
CE
= 50V, I
C
= 3.0A, PW = 80µs
µA
V
nA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
F
= 3.0A, V
GE
= 0V
I
F
= 3.0A, V
GE
= 0V, T
J
= 150°C
V
GE
= ±20V, V
CE
= 0V
8
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
13
1.5
6.6
62
39
100
18
15
110
68
91
98
190
18
17
120
91
190
23
6.6
20
2.3
9.9
75
50
120
22
21
120
80
100
140
230
22
22
140
105
—
—
—
pF
ns
µJ
µJ
I
C
= 3.0A
nC
V
CC
= 400V
V
GE
= 15V
Conditions
Ref.Fig.
23
CT1
I
C
= 3.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 100Ω, L = 2.5mH
T
J
= 25°C
I
C
= 3.0A, V
CC
= 400V
CT4
e
ns
V
GE
= 15V, R
G
= 100Ω, L = 2.5mH
T
J
= 25°C
I
C
= 3.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 100Ω, L = 2.5mH
T
J
= 150°C
I
C
= 3.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 100Ω, L = 2.5mH
T
J
= 150°C
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150°C, I
C
= 15.6A, Vp = 600V
CT4
CT4
13,15
WF1,WF2
14,16
CT4
WF1
WF2
e
22
FULL SQUARE
10
—
—
38
—
44
µs
µJ
4
CT2
CT3
WF4
17,18,19
V
CC
=500V,V
GE
=+15V to 0V,R
G
= 100Ω
T
J
= 150°C, Vp = 600V, R
G
= 100Ω
V
CC
=360V,V
GE
= +15V to 0V
T
J
= 150°C
20,21
Diode Reverse Recovery Time
—
77
84
ns V
CC
= 400V, I
F
= 3.0A, L = 2.5mH
I
rr
Diode Peak Reverse Recovery Current
—
4.8
5.3
A V
GE
= 15V, R
G
= 100Ω
CT4,WF3
Energy losses include "tail" and diode reverse recovery.
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 100µH, R
G
= 100Ω.
When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended
footprint and soldering techniques refer to application note #AN-994.
2
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IRGR3B60KD2PbF
10
60
50
40
Ptot (W)
0
20
40
60
80
100 120 140 160
8
6
IC (A)
30
20
4
2
10
0
0
20
40
60
80
100 120 140 160
T C (°C)
0
T C (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
Fig. 2
- Power Dissipation vs. Case
Temperature
100
100
10
10 µs
IC (A)
10
IC A)
1
100 µs
1ms
1
0.1
10ms
DC
0.01
1
10
100
VCE (V)
1000
10000
0
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C; T
J
≤
150°C
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
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3
IRGR3B60KD2PbF
25
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
25
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
20
20
ICE (A)
15
15
10
10
5
5
0
0
2
4
6
VCE (V)
8
10
12
0
0
2
4
6
VCE (V)
8
10
12
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
25
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
25
-40°C
25°C
150°C
20
20
ICE (A)
15
15
IF (A)
10
10
5
5
0
0
2
4
6
VCE (V)
8
10
12
0
0.0
1.0
2.0
VF (V)
3.0
4.0
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 80µs
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80µs
4
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IRGR3B60KD2PbF
20
18
16
14
20
18
16
14
VCE (V)
ICE = 1.5A
ICE = 3.0A
ICE = 6.0A
VCE (V)
12
10
8
6
4
2
0
5
10
VGE (V)
12
10
8
6
4
2
0
ICE = 1.5A
ICE = 3.0A
ICE = 6.0A
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
20
18
16
14
VCE (V)
ID, Drain-to-Source Current
(Α
)
25
20
T J = 25°C
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 1.5A
ICE = 3.0A
ICE = 6.0A
15
T J = 150°C
10
5
0
15
20
0
5
10
15
20
VGS , Gate-to-Source Voltage (V)
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 150°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
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