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BD935: 产品描述Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin; 产品类别分立半导体晶体管; 文件大小71KB，共2页; 制造商New Jersey Semiconductor; 官网地址http://www.njsemi.com

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BD935概述

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

BD935规格参数

参数名称	属性值
厂商名称	New Jersey Semiconductor
包装说明	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Is Samacsys	N
最大集电极电流 (IC)	3 A
集电极-发射极最大电压	60 V
配置	SINGLE
最小直流电流增益 (hFE)	25
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	NPN
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	3 MHz
Base Number Matches	1

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20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

Silicon NPN Power Transistor

DESCRIPTION

• DC Current Gain-

: h

= 40(Min)@ l

= 150mA

• Complement to Type BD934/936/938/940/942

APPLICATIONS

• Designed for use in output stages of audio and television

amplifier circuits where high peak powers can occur.

BD933/935/937/939/941

ABSOLUTE MAXIMUM RATINGS(T

=25"C)

SYMBOL

PARAMETER

BD933

BD935

VALUE

100

120

140

100

120

0.5

150

UNIT

. I

1 2 3

1.BASE

2. COLLECTOR

3- EMITTER

TO-220C package

VCBO

Collector-Base Voltage

BD937

BD939

BD941

BD933

BD935

-i B —

•*• V -H

tlf'

^ert

Jv v V

fl^l

—1500

VCEO

Collector-Emitter Voltage

BD937

BD939

BD941

EBO

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Collector Power Dissipation

@ T

=25'C

Junction Temperature

Storage Temperature Range

ICM

Tstg

WIN

DIM

15.70

9.90

-65-150

°c

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal Resistance.Junction to Case

Thermal Resistance.Junction to Ambient

MAX

4.17

UNIT

iv,

Rth j-c

Rth j-a

r/w

•c/w

MAX

15.90

10.10

4.20

4.40

0.70

0.90

3.40

3.60

4.98

5.1?

2.90

2.70

0.44

0.46

13.20 13.40

1.30

1.10

2.90

2.70

2.50

2.70

1.29

1.31

6.65

6.45

8.66

8.86

Oiinlih/ S

BD935相似产品对比

	BD935	BD933	BD941	BD937	BD939
描述	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 3A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
厂商名称	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
最大集电极电流 (IC)	3 A	3 A	3 A	3 A	3 A
集电极-发射极最大电压	60 V	45 V	120 V	80 V	100 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	25	25	25	25	25
JEDEC-95代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
元件数量	1	1	1	1	1
端子数量	3	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	NPN	NPN	NPN	NPN	NPN
表面贴装	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	3 MHz	3 MHz	3 MHz	3 MHz	3 MHz

BD935

BD935概述

BD935规格参数

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