HD74HCT1G00
2–input NAND Gate
ADE-205-301B (Z)
3rd. Edition
April 2001
Description
The HD74HCT1G00 is high speed CMOS two input NAND gate using silicon gate CMOS process. With
CMOS low power dissipation, it provides high speed equivalent to LS–TTL series. The internal circuit of
three stages construction with buffer provides wide noise margin and stable output.
Features
•
The basic gate function is lined up as hitachi uni logic series.
•
Supplied on emboss taping for high speed automatic mounting.
•
TTL compatible input level.
Supply voltage range : 4.5 to 5.5 V
Operating temperature range : –40 to +85°C
•
|I
OH
| = I
OL
= 2 mA (min)
Outline and Article Indication
• HD74HCT1G00
Index band
Marking
F
1
CMPAK–5
= Control code
(
or blank)
HD74HCT1G00
Function Table
Inputs
A
L
L
H
H
H : High level
L : Low level
B
L
H
L
H
H
H
H
L
Output Y
Pin Arrangement
IN B
1
5
V
CC
IN A
2
GND
3
4
OUT Y
(Top view)
2
HD74HCT1G00
Absolute Maximum Ratings
Item
Supply voltage range
Input voltage range
*1
*1, 2
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
Ratings
–0.5 to 7.0
–0.5 to V
CC
+ 0.5
–0.5 to V
CC
+ 0.5
±20
±20
±25
±25
200
–65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Test Conditions
Output voltage range
Input clamp current
Output clamp current
Output : H or L
V
I
< 0 or V
I
> V
CC
V
O
< 0 or V
O
>V
CC
V
O
= 0 to V
CC
Continuous output current
Continuous current through I
CC
or I
GND
V
CC
or GND
Maximum power dissipation P
T
at Ta = 25°C (in still air)
*3
Storage temperature
Notes:
Tstg
The absolute maximum ratings are values which must not individually be exceeded, and
furthermore, no two of which may be realized at the same time.
1. The input and output voltage ratings may be exceeded if the input and output clamp-current
ratings are observed.
2. This value is limited to 5.5 V maximum.
3. The maximum package power dissipation was caluculated using a junction temperature of
150°C.
Recommended Operating Conditions
Item
Supply voltage range
Input voltage range
Output voltage range
Output current
Symbol
V
CC
V
I
V
O
I
OL
I
OH
Input rise / fall time
(0.3 V to 2.7 V)
Operating temperature
t
r
, t
f
Ta
Min
4.5
0
0
—
—
0
–40
Max
5.5
5.5
V
CC
2
–2
500
85
ns
°C
Unit
V
V
V
mA
V
CC
= 4.5 to 5.5 V
V
CC
= 4.5 to 5.5 V
V
CC
= 4.5 to 5.5 V
Test Conditions
Note: Unused or floating inputs must be held high or low.
3
HD74HCT1G00
Electrical Characteristics
Item
Symbol V
CC
(V)
Input voltage
V
IH
V
IL
Output voltage V
OH
T
a
= 25°C
Min
Typ
—
—
4.5
4.31
0.0
0.17
—
—
—
Max
—
0.8
—
—
0.1
0.26
±0.1
1.0
2.0
T
a
= –40 to 85°C
Unit Test Conditions
Min
2.0
—
4.4
4.13
—
—
—
—
—
Max
—
0.8
—
—
0.1
0.33
±1.0
10.0
2.9
µA
µA
mA
V
V
IN
=
V
IH
or V
IL
I
OH
= –20
µA
I
OH
= –2 mA
I
OL
= 20
µA
I
OL
= 2 mA
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
One input V
IN
= 2.4 V,
other input V
CC
or GND
V
4.5 to 2.0
5.5
4.5 to —
5.5
4.5
4.5
4.4
4.18
—
—
—
—
—
V
OL
4.5
4.5
Input current
Operating
current
Quiescent
supply current
I
IN
I
CC
I
CCT
5.5
5.5
5.5
4
HD74HCT1G00
Switching Characteristics
Item
Symbol T
a
= 25°C
Min
Output rise / fall time
Propagation delay time
t
TLH
t
THL
t
PLH
t
PHL
(C
L
= 15 pF, t
r
= t
f
= 6 ns, V
CC
= 5 V)
Item
Symbol
V
CC
Output rise / fall time
Propagation delay time
t
TLH
t
THL
t
PLH
t
PHL
Input capacitance
Equivalent capacitance
C
IN
C
PD
4.5
4.5
4.5
—
—
T
a
= 25°C
Min
—
—
—
—
—
Typ
14
10.5
16.0
2.5
10
Max
25
16
27
5
—
T
a
= –40 to 85°C
Unit Test Conditions
Unit
Typ
5
6.9
9.8
Max
10
12
17
ns
ns
Test Conditions
—
—
—
Test circuit
Test circuit
Min
—
—
—
—
—
Max
31
20
31
5
—
pF
pF
ns
ns
Test circuit
Test circuit
(C
L
= 50 pF, t
r
= t
f
= 6 ns)
Note: C
PD
is equivalent capacitance inside of the IC calculated from the operating current without load (see
test circuit). The average operating current without load is calculated according to the expression
below.
I
CC
(opr) = C
PD
•
V
CC
•
f
IN
+ I
CC
5
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