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IS64LP12832-150TQA2

产品描述Cache SRAM, 128KX32, 3.8ns, CMOS, PQFP100, TQFP-100
产品类别存储   
文件大小120KB,共17页
制造商Integrated Silicon Solution ( ISSI )
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IS64LP12832-150TQA2概述

Cache SRAM, 128KX32, 3.8ns, CMOS, PQFP100, TQFP-100

IS64LP12832-150TQA2规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Integrated Silicon Solution ( ISSI )
零件包装代码QFP
包装说明TQFP-100
针数100
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
Is SamacsysN
最长访问时间3.8 ns
其他特性PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)150 MHz
I/O 类型COMMON
JESD-30 代码R-PQFP-G100
JESD-609代码e0
长度20 mm
内存密度4194304 bit
内存集成电路类型CACHE SRAM
内存宽度32
湿度敏感等级3
功能数量1
端子数量100
字数131072 words
字数代码128000
工作模式SYNCHRONOUS
最高工作温度105 °C
最低工作温度-40 °C
组织128KX32
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装等效代码QFP100,.63X.87
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)240
电源2.5/3.3,3.3 V
认证状态Not Qualified
筛选级别AEC-Q100
座面最大高度1.6 mm
最大待机电流0.02 A
最小待机电流3.14 V
最大压摆率0.28 mA
最大供电电压 (Vsup)3.63 V
最小供电电压 (Vsup)3.135 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
处于峰值回流温度下的最长时间30
宽度14 mm
Base Number Matches1

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IS64LP12832
IS64LP12836, IS64LP25618
128K x 32, 128K x 36, 256K x 18
SYNCHRONOUS
PIPELINED STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Interleaved or linear burst sequence control
using MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Common data inputs and data outputs
• JEDEC 100-Pin TQFP and
119-pin PBGA package
• Power-down snooze mode
• Power Supply
+ 3.3V V
DD
+ 3.3V OR 2.5V V
DDQ
(I/O)
• Temperature offerings
Option A1: -40
0
C to +85
0
C
Option A2: -40
0
C to +105
0
C
Option A3: -40
0
C to +125
0
C
ISSI
®
ADVANCED INFORMATION
JANUARY 2003
DESCRIPTION
The
ISSI
IS64LP12832, IS64LP12836, and IS64LP25618
are high-speed synchronous static RAMs designed to
provide high-performance memory with burst for high-
speed networking and communication applications.
IS64LP12832 is organized as 131,072 words by 32 bits.
IS64LP12836 is organized as 131,072 words by 36 bits.
IS64LP25618 is organized as 262,144 words by 18 bits. The
IS64LP12832, IS64LP12836, and IS64LP25618 are fabri-
cated with
ISSI
's advanced CMOS technology. These
devices integrate a 2-bit burst counter, high-speed SRAM
core, and high-drive capability outputs into a single mono-
lithic circuit. All synchronous inputs pass through registers
controlled by a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be from
one to four bytes wide as controlled by the write control
inputs.
Separate byte enables allow individual bytes to be written.
BW1
controls DQa,
BW2
controls DQb,
BW3
controls
DQc,
BW4
controls DQd, conditioned by
BWE
being
LOW. A LOW on
GW
input would cause all bytes to be
written.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the
ADV
(burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
FAST ACCESS TIME
Symbol
t
KQ
t
KC
Parameter
Clock Access Time
Cycle Time
Frequency
-166
3.5
6
166
-150
3.8
6.7
150
Units
ns
ns
MHz
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the
latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
01/20/03
1

 
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