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MVMSV501AE3TR

产品描述Stabistor Diode, Silicon, DO-201AA, PLASTIC PACKAGE-2
产品类别二极管   
文件大小282KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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MVMSV501AE3TR概述

Stabistor Diode, Silicon, DO-201AA, PLASTIC PACKAGE-2

MVMSV501AE3TR规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
零件包装代码DO-201
包装说明O-PALF-W2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
其他特性HIGH RELIABILITY
外壳连接ISOLATED
配置COMMON BIPOLAR TERMINAL, 2 ELEMENTS
二极管元件材料SILICON
二极管类型STABISTOR DIODE
JEDEC-95代码DO-201AA
JESD-30 代码O-PALF-W2
JESD-609代码e3
湿度敏感等级1
元件数量2
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
最大功率耗散1 W
认证状态Not Qualified
表面贴装NO
端子面层MATTE TIN
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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MSV101A thru MSV101G
MSV201A thru MSV701A
BIDIRECTIONAL VARISTORS
SCOTTSDALE DIVISION
DESCRIPTION
The MSV series consists of a matched set of silicon p-n junctions
configured for bidirectional application. They can be used in telephone
equipment, replacing copper-oxide varistors, fractional voltage regulators,
negative-temperature-coefficient resistors, signal limiters and expanders.
They are ideally suited for meter/galvanometer protection, wave shaping,
threshold limiters and zener diode compensation.
The MSV varistor uses two or more forward biased matched silicon diodes
in anti-parallel legs in a two-electrode device configuration. It provides a
voltage-dependent nonlinear resistance that drops markedly as the applied
voltage is increased similar to a TVS except it offers lower voltage features.
MSV devices are designed for controlled protection at various current
levels and are rated at various peak pulse currents.
These varistors are supplied in Microsemi’s cost-effective, highly reliable,
molded axial-leaded package. Non-standard voltages are also available.
Devices in this series with V
C2
clamping are rated to U.L.497B
requirements. (See table).
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-201AA
FEATURES
Bidirectional low voltage clamping 1.5 V to 9.0 V
using forward biased diodes in series and antiparallel
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers
Moisture classification is Level 1 with no dry pack
required per IPC/JEDEC J-STD-020B
Negative temperature coefficient (see Figure 2)
APPLICATIONS / BENEFITS
Low voltage clamping protection well be low
conventional TVS components
Telephone equipment protection
Protects from switching transients
Protection from ESD and EFT per IEC 61000-4-2
and IEC61000-4-4
Secondary lightning protection
Clamping voltages also specified per U.L. 497B with
100 V/µs rise time
MAXIMUM RATINGS
Steady State Power: 1.0 Watt at 50
o
C.
Operating and Storage temperatures: -65
o
C to
+150
o
C.
Surge: 30 Amps, 8.4 ms @ 25
o
C.
Pulse: 1.0 ms @ 25
o
C for V
C1
clamping*.
t
clamping
(0 volts to
V
BR
min.): Less than 1x10
-8
seconds (theoretical)
Solder temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Void free molded thermosetting epoxy body
meeting UL94V-0
FINISH: Tin-lead plated copper readily solderable
per MIL-STD-750, method 2026
POLARITY: Not marked for Bidirectional
MARKING: Part Number
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
WEIGHT: 1.5 gram (approx.)
See package dimensions on last page
MSV101A – 101G and
MSV201A – 701A
Copyright
2003
12-23-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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