Datasheet> 器件分类 > 存储> GS832236E-225MT

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GS832236E-225MT: 产品描述Cache SRAM, 1MX36, 7ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165; 产品类别存储; 文件大小679KB，共39页; 制造商GSI Technology; 官网地址http://www.gsitechnology.com/

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GS832236E-225MT概述

Cache SRAM, 1MX36, 7ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165

GS832236E-225MT规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	GSI Technology
零件包装代码	BGA
包装说明	LBGA, BGA165,11X15,40
针数	165
Reach Compliance Code	unknown
ECCN代码	3A991.B.2.B
Is Samacsys	N
最长访问时间	7 ns
其他特性	FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT ALSO OPERATES AT AS 3.3V SUPPLY
最大时钟频率 (fCLK)	225 MHz
I/O 类型	COMMON
JESD-30 代码	R-PBGA-B165
长度	17 mm
内存密度	37748736 bit
内存集成电路类型	CACHE SRAM
内存宽度	36
功能数量	1
端子数量	165
字数	1048576 words
字数代码	1000000
工作模式	SYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-55 °C
组织	1MX36
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LBGA
封装等效代码	BGA165,11X15,40
封装形状	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE
并行/串行	PARALLEL
电源	2.5/3.3 V
认证状态	Not Qualified
座面最大高度	1.5 mm
最大待机电流	0.2 A
最小待机电流	2.3 V
最大压摆率	0.36 mA
最大供电电压 (Vsup)	2.7 V
最小供电电压 (Vsup)	2.3 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子形式	BALL
端子节距	1 mm
端子位置	BOTTOM
宽度	15 mm
Base Number Matches	1

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GS832218/36(B/E)-225M

GS832272C-225M

119-, 165-, & 209-Pin BGA

Military Temp

Features

• Military Temperature Range

• FT pin for user-configurable flow through or pipeline operation

• Single/Dual Cycle Deselect selectable

• IEEE 1149.1 JTAG-compatible Boundary Scan

• ZQ mode pin for user-selectable high/low output drive

• 2.5 V +10%/–10% core power supply

• 3.3 V +10%/–10% core power supply

• 2.5 V or 3.3 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to SCD x18/x36 Interleaved Pipeline mode

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

• Automatic power-down for portable applications

• JEDEC-standard 119-, 165-, and 209-bump BGA package

• RoHS-compliant packages available

2M x 18, 1M x 36, 512K x 72

36Mb S/DCD Sync Burst SRAMs

225 MHz

2.5 V or 3.3 V V

2.5 V or 3.3 V I/O

either linear or interleave order with the Linear Burst Order (LBO)

input. The Burst function need not be used. New addresses can be

loaded on every cycle with no degradation of chip performance.

Flow Through/Pipeline Reads

The function of the Data Output register can be controlled by the

user via the FT mode . Holding the FT mode pin low places the

RAM in Flow Through mode, causing output data to bypass the

Data Output Register. Holding FT high places the RAM in

Pipeline mode, activating the rising-edge-triggered Data Output

SCD and DCD Pipelined Reads

The GS832218/36/72-225M is a SCD (Single Cycle Deselect) and

DCD (Dual Cycle Deselect) pipelined synchronous SRAM. DCD

SRAMs pipeline disable commands to the same degree as read

commands. SCD SRAMs pipeline deselect commands one stage

less than read commands. SCD RAMs begin turning off their

outputs immediately after the deselect command has been

captured in the input registers. DCD RAMs hold the deselect

command for one full cycle and then begin turning off their

outputs just after the second rising edge of clock. The user may

configure this SRAM for either mode of operation using the SCD

mode input.

Byte Write and Global Write

Byte write operation is performed by using Byte Write enable

(BW) input combined with one or more individual byte write

signals (Bx). In addition, Global Write (GW) is available for

writing all bytes at one time, regardless of the Byte Write control

inputs.

FLXDrive™

The ZQ pin allows selection between high drive strength (ZQ low)

for multi-drop bus applications and normal drive strength (ZQ

floating or high) point-to-point applications. See the Output Driver

Characteristics chart for details.

Functional Description

Applications

The GS832218/36/72-225M is a

37,748,736

-bit high

performance synchronous SRAM with a 2-bit burst address

counter. Although of a type originally developed for Level 2

Cache applications supporting high performance CPUs, the device

now finds application in synchronous SRAM applications, ranging

from DSP main store to networking chip set support.

Controls

Addresses, data I/Os, chip enable (E1), address burst control

inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,

GW) are synchronous and are controlled by a positive-edge-

triggered clock input (CK). Output enable (G) and power down

control (ZZ) are asynchronous inputs. Burst cycles can be initiated

with either ADSP or ADSC inputs. In Burst mode, subsequent

burst addresses are generated internally and are controlled by

ADV. The burst address counter may be configured to count in

Parameter Synopsis

-225M

(x18/x36)

(x72)

tCycle

Curr (x18)

Curr (x36)

Curr (x72)

tCycle

Curr (x18)

Curr (x36)

Curr (x72)

2.7

3.0

4.4

315

415

460

7.0

230

325

360

Unit

Pipeline

3-1-1-1

Flow Through

2-1-1-1

Rev: 1.00 1/2011

1/39

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS832236E-225MT相似产品对比

	GS832236E-225MT	GS832272C-225MT	GS832272C-225M	GS832236E-225M	GS832236B-225M	GS832236B-225MT	GS832218E-225M	GS832218E-225MT	GS832218B-225MT	GS832218B-225M
描述	Cache SRAM, 1MX36, 7ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165	Cache SRAM, 512KX72, 7ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, BGA-209	Cache SRAM, 512KX72, 7ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, BGA-209	Cache SRAM, 1MX36, 7ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165	Cache SRAM, 1MX36, 7ns, CMOS, PBGA119, 22 X 14 MM, 1.27 MM PITCH, FPBGA-119	Cache SRAM, 1MX36, 7ns, CMOS, PBGA119, 22 X 14 MM, 1.27 MM PITCH, FPBGA-119	Cache SRAM, 2MX18, 7ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165	Cache SRAM, 2MX18, 7ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165	Cache SRAM, 2MX18, 7ns, CMOS, PBGA119, 22 X 14 MM, 1.27 MM PITCH, FPBGA-119	Cache SRAM, 2MX18, 7ns, CMOS, PBGA119, 22 X 14 MM, 1.27 MM PITCH, FPBGA-119
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	LBGA, BGA165,11X15,40	LBGA, BGA209,11X19,40	LBGA, BGA209,11X19,40	LBGA, BGA165,11X15,40	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	LBGA, BGA165,11X15,40	LBGA, BGA165,11X15,40	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50
针数	165	209	209	165	119	119	165	165	119	119
Reach Compliance Code	unknown	compliant	compliant	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B
最长访问时间	7 ns	7 ns	7 ns	7 ns	7 ns	7 ns	7 ns	7 ns	7 ns	7 ns
其他特性	FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT ALSO OPERATES AT AS 3.3V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT ALSO OPERATES AT AS 3.3V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT ALSO OPERATES AT AS 3.3V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT ALSO OPERATES AT AS 3.3V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT ALSO OPERATES AT AS 3.3V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT ALSO OPERATES AT AS 3.3V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT ALSO OPERATES AT AS 3.3V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT ALSO OPERATES AT AS 3.3V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT ALSO OPERATES AT AS 3.3V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT ALSO OPERATES AT AS 3.3V SUPPLY
最大时钟频率 (fCLK)	225 MHz	225 MHz	225 MHz	225 MHz	225 MHz	225 MHz	225 MHz	225 MHz	225 MHz	225 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PBGA-B165	R-PBGA-B209	R-PBGA-B209	R-PBGA-B165	R-PBGA-B119	R-PBGA-B119	R-PBGA-B165	R-PBGA-B165	R-PBGA-B119	R-PBGA-B119
长度	17 mm	22 mm	22 mm	17 mm	22 mm	22 mm	17 mm	17 mm	22 mm	22 mm
内存密度	37748736 bit	37748736 bit	37748736 bit	37748736 bit	37748736 bit	37748736 bit	37748736 bit	37748736 bit	37748736 bit	37748736 bit
内存集成电路类型	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
内存宽度	36	72	72	36	36	36	18	18	18	18
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	165	209	209	165	119	119	165	165	119	119
字数	1048576 words	524288 words	524288 words	1048576 words	1048576 words	1048576 words	2097152 words	2097152 words	2097152 words	2097152 words
字数代码	1000000	512000	512000	1000000	1000000	1000000	2000000	2000000	2000000	2000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
组织	1MX36	512KX72	512KX72	1MX36	1MX36	1MX36	2MX18	2MX18	2MX18	2MX18
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LBGA	LBGA	LBGA	LBGA	BGA	BGA	LBGA	LBGA	BGA	BGA
封装等效代码	BGA165,11X15,40	BGA209,11X19,40	BGA209,11X19,40	BGA165,11X15,40	BGA119,7X17,50	BGA119,7X17,50	BGA165,11X15,40	BGA165,11X15,40	BGA119,7X17,50	BGA119,7X17,50
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY	GRID ARRAY	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY	GRID ARRAY
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.5 mm	1.7 mm	1.7 mm	1.5 mm	1.99 mm	1.99 mm	1.5 mm	1.5 mm	1.99 mm	1.99 mm
最大待机电流	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A
最小待机电流	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
最大压摆率	0.36 mA	0.39 mA	0.39 mA	0.36 mA	0.36 mA	0.36 mA	0.28 mA	0.28 mA	0.28 mA	0.28 mA
最大供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
最小供电电压 (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	1 mm	1 mm	1 mm	1 mm	1.27 mm	1.27 mm	1 mm	1 mm	1.27 mm	1.27 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
宽度	15 mm	14 mm	14 mm	15 mm	14 mm	14 mm	15 mm	15 mm	14 mm	14 mm
厂商名称	GSI Technology	GSI Technology	GSI Technology	GSI Technology	-	-	GSI Technology	GSI Technology	GSI Technology	GSI Technology
Base Number Matches	1	1	1	1	1	1	-	-	-	-

GS832236E-225MT

GS832236E-225MT概述

GS832236E-225MT规格参数

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GS832236E-225MT相似产品对比

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