VISHAY
FE3A / 3B / 3C / 3D
Vishay Semiconductors
Ultra Fast Sinterglass Diode
Features
• High temperature metallurgically bonded con-
struction
• Cavity-free glass passivated junction
• Superfast recovery time for high efficiency
• Low forward voltage, high current capability
• Hermetically sealed package
• Low leakage current
• High surge current capability
17133
Mechanical Data
Case:
Sintered glass case, G-4
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
approx. 1040 mg
Parts Table
Part
FE3A
FE3B
FE3C
FE3D
Type differentiation
V
RRM
= 50 V
V
RRM
= 100 V
V
RRM
= 150 V
V
RRM
= 200 V
G-4
G-4
G-4
G-4
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Test condition
see electrical characteristics
Part
FE3A
FE3B
FE3C
FE3D
Maximum average forward
rectified current
Peak forward surge current
0.375 " (9.5 mm) lead length at
T
amb
= 75 °C
8.3 ms single half sine-wave
superimposed on rated load
(JEDEC Method)
Symbol
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
F(AV)
I
FSM
Value
50
100
150
200
3.0
125
Unit
V
V
V
V
A
A
Operating junction and storage
temperature range
T
J
, T
STG
- 55 to + 175
°C
Document Number 86070
Rev. 1.3, 11-Aug-04
www.vishay.com
1
FE3A / 3B / 3C / 3D
Vishay Semiconductors
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Typical thermal resistance
1), 2)
1)
VISHAY
Test condition
Symbol
R
θJA
R
θJL
Value
55
20
Unit
K/W
K/W
Thermal resistance from junction to ambient and/or lead, 0.375 " (9.5 mm) lead length mounted on P.C.B. with 0.5 x 0.5 (12 x 12 mm)
copper pads.
Thermal resistance from junction to lead at 0.375 " (9.5 mm) lead length with both leads attached to heatsinks
2)
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Maximum instantaneous
forward voltage
Maximum reverse current
Test condition
I
F
= 3.0 A
V
R
= V
RRM
, T
amb
= 25 °C
V
R
= V
RRM
, T
amb
= 100 °C
Maximum reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
Typical junction capacitance
V
R
= 4 V, f = 1 MHz
Symbol
V
F
I
R
I
R
t
rr
C
j
100
Min
Typ.
Max
0.95
5.0
50
35
Unit
V
µA
µA
ns
pF
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
Average Forward Rectified Current (A)
3.0
150
Resistive or Inductive Load
0.375" (9.5mm) Lead Length
T
J
= T
J
max.
8.3ms Single Half Sine-W ave
(JEDEC Method)
Peak Forward Surge Current (A)
2.5
125
2.0
100
1.5
1.0
75
50
0.5
0
25
0
0
gfe3a_01
25
50
75
100
125
150
175
gfe3a_02
1
10
100
Ambient T
emperature (°C)
Number of Cycles at 60 H
Z
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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2
Document Number 86070
Rev. 1.3, 11-Aug-04
VISHAY
FE3A / 3B / 3C / 3D
Vishay Semiconductors
50.0
Instantaneous Forward Current (A)
10.0
1.0
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
0.1
0.01
0.4
gfe3a_03
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1,000
Instantaneous Reverse Leakage Current
(µA)
100
T
J
= 125°C
10
T
J
= 100°C
1
0.1
T
J
= 25°C
0.01
0
20
40
60
80
100
gfe3a_04
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
250
200
T
J
= 25°C
f = 1.0 MH
Z
Vsig = 50mVp-p
Junction Capacitance (pF)
150
100
50
0
0.1
gfe3a_05
1
10
100
Reverse V
oltage (V)
Figure 5. Typical Junction Capacitance
Document Number 86070
Rev. 1.3, 11-Aug-04
www.vishay.com
3
FE3A / 3B / 3C / 3D
Vishay Semiconductors
Package Dimensions in mm (Inches)
VISHAY
4.6 (0.180)
2.9 (0.115)
DIA.
25.4 (1.0)
MIN.
7.6 (0.300)
MAX.
1.07 (0.042)
0.962 (0.038)
DIA.
17032
25.4 (1.0)
MIN.
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4
Document Number 86070
Rev. 1.3, 11-Aug-04
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
FE3A / 3B / 3C / 3D
Vishay Semiconductors
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86070
Rev. 1.3, 11-Aug-04
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