Preliminary Data Sheet
May 2004
AGR26180EF
180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR26180EF is a high-voltage, gold-metalized,
enhancement mode, laterally diffused metal oxide
semiconductor (LDMOS) RF power transistor suit-
able for ultrahigh-frequency (UHF) applications,
including multichannel multipoint distribution service
(MMDS) for broadcasting and communications.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case
Sym
R
θJC
Value
0.35
Unit
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at
T
C
= 25 °C
Derate Above 25
°C
Operating Junction
Temperature
Storage Temperature
Range
Sym
Value
V
DSS
65
V
GS
–0.5, +15
500
P
D
—
T
J
3
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
375D–03, STYLE 1
Figure 1. AGR26180EF Flanged Package
T
STG
–65, +150
Features
■
■
■
■
■
■
■
■
■
Typical performance for MMDS systems.
f = 2600 MHz, I
DQ
= 1700 mA, Vds = 28 V,
adjacent channel BW = 3.84 MHz, 5 MHz offset;
alternate channel BW = 3.84 MHz, 10 MHz offset.
Typical P/A ratio of 9.8 dB at 0.01% (probability)
CCDF*:
— Output power: 27 W.
— Power gain: 12.5 dB.
— Efficiency: 20%.
— ACPR: –33 dBc.
— ACLR1: –35 dBc.
— Return loss: –12 dB.
Typical pulsed P1dB, 6 µs pulse at 10% duty: 185 W.
High-reliability, gold-metalization process.
Hot carrier injection (HCI) induced bias drift of <5%
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 2600 MHz, 180 W output
power pulsed 4 µs at 10% duty.
Large signal impedance parameters available.
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR26180EF
HBM
MM
CDM
Minimum (V)
500
50
1000
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
*The test signal utilized is 4-channel W-CDMA Test Model 1. This
test signal provides an equivalent reference (occupied bandwidth
and waveform EPF) for the actual performance with an MMDS
waveform.
AGR26180EF
180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Preliminary Data Sheet
May 2004
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 4. dc Characteristics
Parameter
Off Characteristics
Drain-source Breakdown Voltage (V
GS
= 0, I
D
= 300 µA)
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
Zero Gate Voltage Drain Leakage Current (V
DS
= 28 V, V
GS
= 0 V)
On Characteristics
Forward Transconductance (V
DS
= 10 V, I
D
= 1 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 600 µA)
Gate Quiescent Voltage (V
DS
= 28 V, I
D
= 2 x 850 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 1 A)
Table 5. RF Characteristics
Parameter
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
Common-source Amplifier Power Gain*
Drain Efficiency*
Third-order Intermodulation Distortion*
(IM3 distortion measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
Input Return Loss*
Power Output, 1 dB Compression Point, pulsed 4 µs at 10% duty.
(V
DD
= 28 V, f
C
= 2655.0 MHz, pulsed 6 µs at 10% duty)
Output Mismatch Stress
(V
DD
= 28 V, P
OUT
= 180 W (pulsed 4 µs at 10% duty),
I
DQ
= 2 x 850 mA, f
C
= 2655.0 MHz VSWR = 10:1; [all phase angles])
C
RSS
—
4.0
—
pF
Symbol
Min
Typ
Max
Unit
G
FS
V
GS(TH)
V
GS(Q)
V
DS(ON)
—
2.8
3.0
—
12
3.4
3.7
0.08
—
4.0
4.6
—
S
Vdc
Vdc
Vdc
V
(BR)DSS
I
GSS
I
DSS
65
—
—
—
—
—
—
6
18
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Functional Tests (in Agere Systems Supplied Test Fixture)
G
PS
η
IM3
—
—
—
12.5
20
–36
—
—
—
dB
%
dBc
ACPR
—
–40
—
dBc
IRL
P
1dB
ψ
—
—
–12
185
—
—
dB
W
No degradation in output
power.
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2645.0 MHz, and f2 = 2655 MHz. V
DD
= 28 Vdc, I
DQ
= 2 x 850 mA, and
P
OUT
= 27 W average. Nominal operating voltage 28 Vdc.
2
Agere Systems Inc.
Preliminary Data Sheet
May 2004
AGR26180EF
180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR26180EF
L1
V
GG
R5
+
R3
C1
C5
C13
Z13
R1
PINS:
1A. DRAIN
1B. DRAIN
2A. GATE
2B. GATE
3. SOURCE
V
DD
+
C16
C7
C3
C17
Z17
Z3
IN
Z1
Z2
C9
Z5
Z7
C19
C20
Z9
Z11
2A
1A
Z15
Z19 C11 Z21
Z23
Z24
OUT
3 DUT
2B
Z10 Z12
Z14
Z18
1B
Z12
Z20 C12 Z22
Z4 C10 Z6
V
GG
Z8
L2
R6
+
R4
C2
C6
R2
V
DD
+
C14
C15
C8
C4
C18
A. Schematic
Parts List:
■
Microstrip line: Z1, Z29 1.330 in. x 0.066 in.;
Z2, Z27 0.753 in. x 0.112 in.;
Z3 0.145 in. x 0.066 in.; Z4 1.578 in. x 0.066 in.;
Z5, Z6 0.160 in. x 0.066 in.;
Z7, Z8 0.172 in. x 0.066 in.;
Z9, Z10 0.134 in. x 0.171 in.;
Z11, Z12 0.320 in. x 0.600 in.;
Z13, Z14 0.856 in. x 0.043 in.;
Z15, Z16 0.155 in. x 0.645 in.;
Z17, Z18 0.217 in. x 0.750 in.;
Z19, Z20 0.473 in. x 0.088 in.;
Z21, Z22 0.026 in. x 0.293 in.;
Z23, Z24 0.194 in. x 0.066 in.;
Z25 1.718 in. x 0.066 in.; Z26 0.341 in. x 0.066 in.;
Z28 0.150 in. x 0.075 in.
®
■
ATC
chip capacitor:
C9, C10, C11, C12: 4.7 pF 100B47_J500;
C3, C14, C15, C16: 5.6 pF 100B5R6J_500;
C19, C20: 0.7 pF 100A0R7J_500.
C27: 47 pF 100A470JW;
C28: 8.2 pF 100B8R2BW.
C4, C5: 12 pF 100B120JW;
®
■
Murata
50 V chip capacitor:
C3, C4: 4.7 µF, GRM55ER7H475KA01;
C5, C6: 2.2 µF, GRM43ER71H225KA01L;
C7, C8: 0.12 µF, LLL31MR71H124MD01.
■
AVX
™
35 V capacitor:
C1, C2, C17, C18: 15 µF TPSD156K035R0300.
■
1206 size chip resistors:
R1, R2: 4.7
Ω;
R3, R4: 560 kΩ; R5, R6 470
Ω.
®
■
Fair-Rite
ferrite bead L1, L2: 2512067007Y3.
®
■
Taconic
ORCER RF-35: board material,
1 oz. copper, 30 mil thickness,
ε
r = 3.5.
Gate
Gnd
Drain
T1
T2
T5
C1
R3
C5
R5
R1L1
C13
C16
C7
C3
C17
C9
C19
2A
2B
3
1A
1B
C11
OT1
C12
C10 C20
C8
C15
C4
R2 L2
R6
C6
R4
C2
T3
T4
T6
C14
C18
B. Component Layout
Figure 2. Component Layout
Agere Systems Inc.
3
AGR26180EF
180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Preliminary Data Sheet
May 2004
Typical Performance Characteristics
S
TOW
0.0
Ð
>
W
A
V
EL
E
N
GTH
170
0.49
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0.0
Ð
D
L
OA
D
<
OW
A
R
7
±
180
HST
0.4
70
N
GT
-1
E
V
EL
WA
<Ð
-90
-160
50
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
0.2
0.49
0.48
)
/
Yo
(-jB
CE
0.6
-85
N
TA
EP
SC
4
0.0
50
-1
-80
U
ES
V
TI
UC
0.4
0.3
6
-75
5
0.4
40
-1
06
Z
L
CI
T
IVE
-70
0.6
-60
1.6
0.7
1.4
0.8
0.9
1.0
1.2
5
-5
0
-5
5
-4
MHz (f)
2500 (f1)
2550 (f2)
2600 (f3)
2650 (f4)
2700 (f5)
Z
S
Ω
(complex
source impedance)
6.4 – j8.0
5.8 – j7.6
5.2 – j7.7
4.7 – j8.3
4.5 – j8.4
Z
L
Ω
(complex
optimum load impedance)
3.0 – j7.8
2.9 – j7.0
2.7 – j6.2
2.6 – j5.5
2.5 – j4.7
Z
S
= Test circuit impedance as measured from gate to gate, balanced configuration.
Z
L
= Test circuit impedance as measured from drain to drain, balanced configuration.
1A
+
BALANCED
INPUT
MATCHING
NETWORK
ZS
2A
+
3 DUT
– 2B
1B
–
ZL
BALANCED
OUTPUT
MATCHING
NETWORK
PINS: 1A & 1B DRAIN, 2A & 2B GATE, 3 SOURCE
Figure 3. Series Equivalent Balanced Input and Output Impedances
4
Agere Systems Inc.
F
0.
32
18
0.
0
-5
-25
44
f1
-30
0.
0
-65
.5
0.
0.3
0.1
3
7
-60
1.8
2.
0
0.3
0.1
4
6
-3
-70
5
0.35
0.15
0.36
0.14
-80
-4
0
0.37
0.13
0.4
0.2
-90
0.12
0.38
0.11
-100
0.39
CA
P
A
0.1
0.4
-110
RE
AC
TA
0.0
0.4
9
1
NC
EC
OM
-12
0
0.0
8
PO
N
0.4
2
EN
T
(-j
4
0.
f5
X/
-20
3.
5
0.0
O
),
Zo
0
R
0.6
Z
S
IN
D
-15
0.8
f5
f1
5.0
1.
0.2
0
-10
8
0.
10
0.1
0.4
50
20
4.0
1.
0
0.6
0.4
Z
0
= 10
Ω
A
RD
U
CT
0.48
IN
D
90
0.
8
10
0.1
0.
07
-1
30
0.
43
0.25
0.26
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL
ECTI
ON
COEFFI
CI
EN
T
I
N
D
EG
R
L
E
OF
EES
ANG
I
SSI
ON
COEFFI
CI
EN
T
I
N
TRA
N
SM
D
EGR
EES
20
L
E
OF
ANG
0.2
0.2
0.3
-4
0
50
-20
0.2
2
0.2
8
0.2
9
0.2
1
-30
0.
19
0.
31
Preliminary Data Sheet
May 2004
AGR26180EF
180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
(continued)
35
30
25
0
-10
-20
IMD
20
15
10
5
0
1
10
P
OUT
(W, AVERAGE)Z
Test conditions:
Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, f1 = 2590 MHz, f2 = 2600 MHz, V
DD
= 28 V, I
DQ
= 1700 mA.
η
(%)
-30
ACPR
G
PS
-50
-60
-70
100
-40
Figure 4. Power Gain, Drain Efficiency, ACPR, and IM3 vs. Output Power
30
0
η
(%)
η
(%), G
PS
(dB)Z
20
RL (dB)
15
GAIN (dB)
-24
-16
10
IMD
5
ACP
0
2520
2550
2580
MHzZ
2610
2640
-32
-40
-48
2670
Test conditions:
Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, f1 = 2590 MHz, f2 = 2600 MHz, V
DD
= 28 V, I
DQ
= 1700 mA, P
OUT
= 27 W.
Figure 5. Power Gain, Drain Efficiency, ACPR, IM3, and IRL vs. Frequency
Agere Systems Inc.
5
ACPR (dBc), IM3 (dBc), IRL (dB)Z
25
-8
ACPR (dBc), IM3 (dBc)Z
η
(%), G
PS
(dB)Z
模拟与混合信号
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