®
BTA/BTB12 and T12 Series
12A TRIAC
S
SNUBBERLESS™, LOGIC LEVEL & STANDARD
MAIN FEATURES:
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT (Q )
1
Value
12
600 and 800
5 to 50
Unit
A
V
mA
A1
G
A2
A1
A2
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB12 and T12 triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in
applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control operation in light dimmers, motor
speed controllers,...
The snubberless versions (BTA/BTB...W and T12
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. Logic level versions are designed
to interface directly with low power drivers such as
microcontrollers. By using an internal ceramic
pad, the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
Parameter
RMS on-state current (full sine wave)
A2
G
D
2
PAK
(T12-G)
A2
A1
A2
G
A1
A2
G
TO-220AB Insulated
(BTA12)
TO-220AB
(BTB12)
Value
Tc = 105°C
12
Tc = 90°C
t = 20 ms
t = 16.7 ms
120
126
78
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
50
V
DRM
/V
RRM
+ 100
Unit
A
A
D
²
PAK/TO-220AB
TO-220AB Ins.
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
F = 50 Hz
F = 60 Hz
I
²
t
dI/dt
tp = 10 ms
F = 120 Hz
tp = 10 ms
tp = 20 µs
A
²
s
A/µs
V
A
W
°C
1/7
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
I
GM
P
G(AV)
T
stg
T
j
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
4
1
- 40 to + 150
- 40 to + 125
September 2002 - Ed: 6A
BTA/BTB12 and T12 Series
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
s
SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions
Quadrant
T12
T1235
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= 12 V
R
L
= 30
Ω
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
I - III
II
V
D
= 67 %V
DRM
gate open
Tj = 125°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
(dV/dt)c = 10 V/µs
Without snubber
MIN.
MIN.
MAX.
35
50
60
500
-
-
6.5
10
10
15
20
3.5
1
-
35
TW
5
SW
10
1.3
0.2
15
25
30
40
6.5
2.9
-
35
50
60
500
-
-
6.5
50
70
80
1000
-
-
12
V/µs
A/ms
BTA/BTB12
CW
35
BW
50
mA
V
V
mA
mA
Unit
V
D
= V
DRM
R
L
= 3.3 kΩ
Tj = 125°C
I
T
= 100 mA
I
G
= 1.2 I
GT
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs
s
STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB12
C
I
GT
(1)
V
D
= 12 V
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= V
DRM
R
L
= 3.3 kΩ Tj = 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 %V
DRM
gate open Tj = 125°C
Tj = 125°C
I - III - IV
II
MIN.
MIN.
(dV/dt)c (2) (dI/dt)c = 5.3 A/ms
R
L
= 30
Ω
I - II - III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
MAX.
25
40
80
200
5
25
50
1.3
0.2
50
50
100
400
10
V/µs
V/µs
B
50
100
mA
V
V
mA
mA
Unit
STATIC CHARACTERISTICS
Symbol
V
T
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Test Conditions
I
TM
= 17 A
tp = 380 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
35
5
1
Unit
V
V
mΩ
µA
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
2/7
BTA/BTB12 and T12 Series
THERMAL RESISTANCES
Symbol
R
th(j-c)
R
th(j-a)
Junction to case (AC)
Parameter
D
²
PAK/TO-220AB
TO-220AB Insulated
Junction to ambient
S = 1 cm
²
D
²
PAK
TO-220AB
TO-220AB Insulated
S = Copper surface under tab
Value
1.4
2.3
45
60
Unit
°C/W
°C/W
PRODUCT SELECTOR
Voltage (xxx)
Part Number
600 V
BTA/BTB12-xxxB
BTA/BTB12-xxxBW
BTA/BTB12-xxxC
BTA/BTB12-xxxCW
BTA/BTB12-xxxSW
BTA/BTB12-xxxTW
T1235-xxxG
BTB: non insulated TO-220AB package
Sensitivity
800 V
X
X
X
X
X
X
X
50 mA
50 mA
25 mA
35 mA
10 mA
5 mA
35 mA
X
X
X
X
X
X
X
Type
Standard
Snubberless
Standard
Snubberless
Logic level
Logic Level
Snubberless
Package
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
D
²
PAK
ORDERING INFORMATION
BT A 12 -
TRIAC
SERIES
INSULATION:
A: insulated
B: non insulated
CURRENT: 12A
600
BW
(RG)
PACKING MODE
Blank: Bulk
RG: Tube
VOLTAGE:
600: 600V
800: 800V
SENSITIVITY & TYPE
B: 50mA STANDARD
BW: 50mA SNUBBERLESS
C: 25mA STANDARD
CW: 35mA SNUBBERLESS
SW: 10mA LOGIC LEVEL
TW: 5mA LOGIC LEVEL
T 12 35
TRIAC
SERIES
CURRENT: 12A
-
600 G
PACKAGE:
G: D
2
PAK
(-TR)
VOLTAGE:
600: 600V
800: 800V
SENSITIVITY:
35: 35mA
PACKING MODE:
Blank: Tube
-TR: Tape & Reel
3/7
BTA/BTB12 and T12 Series
OTHER INFORMATION
Part Number
BTA/BTB12-xxxyz
BTA/BTB12-xxxyzRG
T1235-xxxG
T1235-xxxG-TR
Marking
BTA/BTB12-xxxyz
BTA/BTB12-xxxyz
T1235xxxG
T1235xxxG
Weight
2.3 g
2.3 g
1.5 g
1.5 g
Base
quantity
250
50
50
1000
Packing
mode
Bulk
Tube
Tube
Tape & reel
Note:
xxx = voltage, yy = sensitivity, z = type
Fig. 1:
Maximum power dissipation versus RMS
on-state current (full cycle).
P (W)
16
14
12
10
8
6
4
2
0
0
1
2
3
4
IT(RMS)(A)
Fig. 2-1:
RMS on-state current versus case
temperature (full cycle).
IT(RMS) (A)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
BTB/T12
BTA
Tc(°C)
5
6
7
8
9
10 11 12
0
25
50
75
100
125
Fig. 2-2:
RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm),full cycle.
IT(RMS) (A)
3.5
3.0
2.5
2.0
D
2
PAK
(S=1cm
2
)
Fig. 3:
Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
1E+0
Zth(j-c)
1E-1
Zth(j-a)
1.5
1.0
0.5
0.0
0
25
Tamb(°C)
50
75
100
125
1E-2
1E-3
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
4/7
BTA/BTB12 and T12 Series
Fig. 4:
values).
ITM (A)
100
On-state characteristics (maximum
Fig. 5:
Surge peak on-state current versus
number of cycles.
ITSM (A)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
t=20ms
Tj max
Non repetitive
Tj initial=25°C
One cycle
10
Tj=25°C
Tj max.
Vto = 0.85 V
Rd = 35 mΩ
Repetitive
Tc=90°C
VTM(V)
Number of cycles
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
1000
Fig. 6:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
1000
dI/dt limitation:
50A/µs
Tj initial=25°C
Fig. 7:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
IGT
ITSM
1.5
100
I²t
IH & IL
1.0
0.5
Tj(°C)
tp (ms)
10
0.01
0.10
1.00
10.00
0.0
-40
-20
0
20
40
60
80
100
120
140
Fig. 8-1:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (BW/CW/T1235).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.8
2.4
2.0
C
SW
Fig. 8-2:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (TW).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
5.0
4.5
4.0
3.5
3.0
2.5
TW
1.6
1.2
0.8
0.4
B
BW/CW/T1235
2.0
1.5
1.0
0.5
(dV/dt)c (V/µs)
(dV/dt)c (V/µs)
1.0
10.0
100.0
0.0
0.1
1.0
10.0
100.0
0.0
0.1
5/7
stm32/stm8
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