IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BTA316X-600E
3Q Hi-Com Triac
5 June 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic
package. The "series E" triac balances the requirements of commutation performance
and gate sensitivity. The "sensitive gate" "series E" is intended for interfacing with low
power drivers including microcontrollers.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct interfacing with low power drivers and microcontrollers
Good immunity to false turn-on by dV/dt
High commutation capability with sensitive gate
High voltage capability
Isolated mounting base package
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
•
•
Electronic thermostats
High power motor controls e.g. washing machines and vacuum cleaners
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
h
≤ 45 °C;
Fig. 1; Fig. 2;
Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
-
-
10
mA
-
-
10
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
600
140
16
Unit
V
A
A
Scan or click this QR code to view the latest information for this product
TO
-2
20F
NXP Semiconductors
BTA316X-600E
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
-
Typ
-
Max
10
Unit
mA
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA316X-600E
BTA316X-600E/DG
TO-220F
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
SOT186A
Type number
BTA316X-600E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
5 June 2014
2 / 13
NXP Semiconductors
BTA316X-600E
3Q Hi-Com Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
h
≤ 45 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
20
P
tot
(W)
15
2
Conditions
Min
-
-
-
-
-
-
-
-
Max
600
16
140
150
98
100
2
5
0.5
150
125
003aab689
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; SIN
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
°C
over any 20 ms period
-
-40
-
conduction
angle,
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
10
5
0
0
2
4
6
8
10
12
14
I
T(RMS)
(A)
16
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 1.
Total power dissipation as a function of RMS on-state current; maximum values
BTA316X-600E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
5 June 2014
3 / 13
NXP Semiconductors
BTA316X-600E
3Q Hi-Com Triac
I
T(RMS)
(A)
100
80
120
003aab669
I
T(RMS)
(A)
20
003aab667
16
12
60
8
40
20
0
10
-2
4
10
-1
1
10
surge duration (s)
0
-50
0
50
100 T (°C) 150
h
f = 50 Hz;
T
h
= 45 °C
Fig. 2.
RMS on-state current as a function of surge
duration; maximum values
Fig. 3.
RMS on-state current as a function of heatsink
temperature; maximum values
160
I
TSM
(A)
120
003aab668
80
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
40
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA316X-600E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
5 June 2014
4 / 13
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