Si4431CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
- 30
± 20
- 9.0
- 7.2
- 7.0
a, b
- 5.6
a, b
- 30
- 3.5
- 2.1
a, b
4.2
2.7
2.5
a, b
1.6
a, b
- 55 to 150
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
A
Pulsed Drain Current
Continuous Source-Drain Diode Current
I
DM
I
S
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 95 °C/W.
d. Based on T
C
= 25 °C.
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
40
24
Maximum
50
30
Unit
°C/W
Document Number: 68748
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
1
New Product
Si4431CDY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 5.6 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 5.6 A, V
GS
= 0 V
- 0.71
22
17
13
9
T
C
= 25 °C
- 3.5
- 30
- 1.2
33
26
A
V
ns
nC
ns
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
- 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 7.0 A
V
GS
= - 4.5 V, I
D
= - 5.6 A
V
DS
= - 15 V, I
D
= - 7.0 A
Min.
- 30
Typ.
Max.
Unit
V
- 31
4.5
- 1.0
- 2.5
± 100
-1
-5
- 20
0.026
0.037
18
1006
0.032
0.049
mV/°C
V
nA
µA
A
Ω
S
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 7.0 A
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 7.0 A
f = 1 MHz
V
DD
= - 15 V, R
L
= 2.7
Ω
I
D
≅
- 5.6 A, V
GEN
= - 10 V, R
g
= 1
Ω
0.4
180
145
25
13
3.5
5.5
2.0
10
13
23
9
38
4.0
20
20
35
18
57
134
33
17
38
20
pF
nC
Ω
ns
V
DD
= - 15 V, R
L
= 2.7
Ω
I
D
≅
- 5.6 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
89
22
11
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68748
S09-0322-Rev. B, 02-Mar-09
New Product
Si4431CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
V
GS
= 10
V
thru 4
V
25
I
D
- Drain Current (A)
I
D
- Drain Current (A)
T
C
= - 55 °C
3.2
4.0
20
2.4
T
C
= 25 °C
1.6
T
C
= 125 °C
0.8
15
10
V
GS
= 3
V
5
V
GS
= 1
V,
2
V
0
0
1
2
3
4
5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.06
1800
Transfer Characteristics
0.05
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
V
GS
= 4.5
V
1500
0.04
1200
C
iss
900
0.03
V
GS
= 10
V
0.02
600
C
oss
C
rss
0.01
300
0
0
5
10
15
20
25
30
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 7 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 15
V
6
V
DS
= 24
V
4
R
DS(on)
- On-Resistance
(Normalized)
1.4
1.6
Capacitance
V
GS
= - 10
V,
I
D
= - 5.6 A
1.2
V
GS
= - 4.5
V,
I
D
= - 7 A
1.0
2
0.8
0
0
4
8
12
16
20
24
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 68748
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
3
New Product
Si4431CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.05
I
D
= 7 A
R
DS(on)
- On-Resistance (Ω)
0.04
T
J
= 125 °C
0.03
I
S
- Source Current (A)
10
T
J
= 150 °C
1
T
J
= 25 °C
0.02
T
J
= 25 °C
0.01
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Source-to-Drain
Voltage
(V)
0.00
0
4
8
12
16
20
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.1
50
On-Resistance vs. Gate-to-Source Voltage
1.9
40
Power (W)
125
150
V
GS(th)
(V)
1.7
I
D
= 250
µA
1.5
30
20
1.3
10
1.1
- 50
- 25
0
25
50
75
100
0
0.001
0.01
0.1
Time (s)
1
10
100
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
1
10
1s
10 s
DC
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
www.vishay.com
4
Document Number: 68748
S09-0322-Rev. B, 02-Mar-09
New Product
Si4431CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
8
I
D
- Drain Current (A)
6
4
2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
5
3.0
4
2.5
2.0
Power (W)
3
Power (W)
0
25
50
75
100
125
150
1.5
2
1.0
1
0.5
0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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