d. Maximum under steady state conditions is 120 °C/W.
Document Number: 73793
S09-0540-Rev. C, 06-Apr-09
www.vishay.com
1
b, d
t
≤
10 s
Steady-State
Symbol
R
thJA
R
thJF
Typ.
45
29
Max.
62.5
38
Unit
°C/W
Si4904DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-State Resistance
b
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
N-Channel
I
F
= 2 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 1.5 A
0.69
62
62
26
36
T
C
= 25 °C
2.7
20
1.2
95
95
A
V
ns
nC
nS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
N-Channel
V
DD
= 20 V, R
L
=4
Ω
I
D
≅
5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
N-Channel
V
DD
= 20 V, R
L
= 4
Ω
I
D
≅
5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
2390
N-Channel
V
DS
= 20 V, V
GS
= 0 V, I
D
= 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 5 A
N-Channel
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 5 A
f = 1 MHz
270
165
56
26
5.5
9.7
2.6
15
20
56
10
88
117
62
19
4.0
23
30
85
15
135
180
95
30
ns
85
40
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5 A
V
GS
= 4.5 V, I
D
= 4 A
V
DS
= 15 V, I
D
= 5 A
20
0.013
0.015
23
0.016
0.019
0.8
40
40
- 4.8
2.0
100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 73793
S09-0540-Rev. C, 06-Apr-09
Si4904DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
V
GS
= 10 thru 3
V
I
D
– Drain C
u
rrent (A)
I
D
– Drain C
u
rrent (A)
16
1.2
1.0
0.8
12
0.6
T
C
= 125 °C
0.4
25 °C
8
4
2
V
0
0.0
0.2
- 55 °C
0.6
1.2
1.8
2.4
3.0
0.0
0.0
0.6
1.2
1.8
2.4
3.0
V
DS
– Drain-to-Source
Voltage
(V)
V
GS
– Gate-to-Source
Voltage
(V)
Output Characteristics
0.020
3500
Transfer Characteristics
R
DS(on)
– On-Resistance (m )
0.018
C – Capacitance (pF)
2800
C
iss
2100
0.016
V
GS
= 4.5
V
0.014
V
GS
= 10
V
0.012
1400
700
C
oss
C
rss
0
8
16
24
32
40
0.010
0
4
8
12
16
20
0
I
D
– Drain Current (A)
V
DS
– Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
I
D
= 5 A
8
R
DS(on)
– On-Resistance
(
N
ormalized)
V
DS
= 10
V
6
V
DS
= 20
V
1.5
1.8
I
D
= 5 A
Capacitance
V
GS
= 10
V
1.2
V
GS
= 4.5
V
4
V
DS
= 30
V
2
0.9
0
0
12
24
36
48
60
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73793
S09-0540-Rev. C, 06-Apr-09
www.vishay.com
3
Si4904DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
R
DS(on)
– Drain-to-So
u
rce On-Resistance ( )
100
0.10
I
D
= 5 A
0.08
20
I
S
– So
u
rce C
u
rrent (A)
10
T
J
= 150 °C
0.06
1
T
J
= 25 °C
0.04
T
A
= 125 °C
0.02
T
A
= 25 °C
0
0
1
2
3
4
5
6
7
8
9
10
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain
Voltage
(V)
V
GS
– Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.4
I
D
= 250
µA
0.2
V
GS(th)
V
ariance (
V
)
50
On-Resistance vs. Gate-to-Source Voltage
40
0
Po
w
er (
W
)
I
D
= 5 mA
30
- 0.2
20
- 0.4
10
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
– Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
– Drain C
u
rrent (A)
Single Pulse Power, Junction-to-Ambient
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
1s
10 s
DC
0.01
0.1
*
V
GS
1
10
100
V
DS
– Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73793
S09-0540-Rev. C, 06-Apr-09
Si4904DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
12
10
I
D
– Drain C
u
rrent (A)
8
Package Limited
6
4
2
0
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
Current Derating*
4.0
1.5
3.2
Po
w
er Dissipation (
W
)
Po
w
er Dissipation (
W
)
1.2
2.4
0.9
1.6
0.6
0.8
0.3
0.0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
T
A
– Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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