VS-1EFH02HM3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 1 A FRED Pt
®
FEATURES
• Hyperfast recovery time, reduced Q
rr
, and soft
recovery
• 175 °C maximum operating junction temperature
Cathode
Anode
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
DO-219AB (SMF)
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
(typ. 125 °C)
t
rr
T
J
max.
Diode variation
DO-219AB (SMF)
1A
200 V
0.74 V
25 ns
175 °C
Single die
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop and
hyperfast recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber boost,
lighting, piezo-injection, as high frequency rectifiers, and
freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperature range
Note
(1)
Device on PCB with 8 mm x 16 mm soldering lands
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 160 °C
(1)
T
J
= 25 °C
TEST CONDITIONS
VALUES
200
1
35
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
, V
R
V
F
I
R
C
T
TEST CONDITIONS
I
R
= 100 μA
I
F
= 1 A
I
F
= 1 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 200 V
MIN.
200
-
-
-
-
-
TYP.
-
0.87
0.74
-
0.5
5
MAX.
-
0.93
0.8
2
8
-
μA
pF
V
UNITS
Reverse leakage current
Junction capacitance
Revision: 27-Jun-16
Document Number: 95786
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-1EFH02HM3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 1 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
-
TYP.
24
-
16
23
1.6
2.5
13
30
MAX.
-
25
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Approximate weight
Marking device
Case style SMF (DO-219AB)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
Device mounted on PCB with 8 mm x 16 mm
soldering lands
Device mounted on PCB with 2 mm x 3.5 mm
soldering lands
TEST CONDITIONS
MIN.
-65
-
-
TYP.
-
-
-
0.015
0.0005
MDH
MAX.
+175
17
140
UNITS
°C
°C/W
°C/W
g
oz.
I
F
- Instantaneous Forward Current (A)
100
100
I
R
- Reverse Current (μA)
175 °C
10
150 °C
10
T
J
= 175 °C
1
125 °C
0.1
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0.01
25 °C
0.001
0
50
100
150
200
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 27-Jun-16
Document Number: 95786
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-1EFH02HM3
www.vishay.com
Vishay Semiconductors
1.2
RMS limit
100
C
T
- Junction Capacitance (pF)
Average Power Loss (W)
0.9
10
0.6
0.3
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
1
0
50
100
150
200
0
0
0.3
0.6
0.9
1.2
1.5
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
180
35
30
25
Allowable Case Temperature (°C)
175
170
t
rr
(ns)
DC
165
160
155
150
0
0.2
0.4
0.6
0.8
1
1.2
Square
wave (D = 0.50)
80 % rated V
R
applied
See
note
(1)
125 °C
20
15
10
5
100
1000
25 °C
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
40
35
30
dI
F
/dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt
125 °C
Q
rr
(nC)
25
20
15
10
100
1000
25 °C
dI
F
/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Revision: 27-Jun-16
Document Number: 95786
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-1EFH02HM3
www.vishay.com
Vishay Semiconductors
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 8 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
1
E
F
H
02
H
M3
1
1
2
3
-
-
-
2
3
4
5
6
7
8
Vishay
Semiconductors
product
Current rating (1 = 1 A)
Circuit configuration:
E =
single
diode
4
5
6
7
8
-
-
-
-
-
F =
SMF
package
Process type,
H = hyperfast recovery
Voltage code (02 = 200 V)
H = AEC-Q101
qualified
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-1EFH02HM3/I
QUANTITY PER REEL
10 000
MINIMUM ORDER QUANTITY
10 000
PACKAGING DESCRIPTION
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95572
www.vishay.com/doc?95618
www.vishay.com/doc?95577
www.vishay.com/doc?96012
Revision: 27-Jun-16
Document Number: 95786
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
DO-219AB (SMF)
DIMENSIONS
in millimeters (inches)
0.85 (0.033)
0.35 (0.014)
0.25 (0.010)
0.05 (0.002)
0.1 (0.004)
5
1.9 (0.075)
1.7 (0.067)
1.2 (0.047)
0.8 (0.031)
0 (0.000)
Detail Z
enlarged
1.08 (0.043)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.88 (0.035)
Foot print recommendation:
1.3 (0.051)
1.3 (0.051)
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
17247
1.4 (0.055)
2.9 (0.114)
Revision: 29-Oct-14
Document Number: 95572
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
5
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