CNY65Exi
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, ATEX Certified
Top view
A (±)
C
FEATURES
• ATEX certificate: PTB 03 ATEX 2033 U
www.vishay.com/doc?85361
• Suitable for intrinsic safe circuits for gas and
dust
• Gas safety provision: II (1) G [Ex ia] IIC
• Dust safety provision: II (1) D [Ex ia] IIIC
16965-1
C (±)
E
• Conforms to EN 60079-0: 2012 + A11: 2013
• Qualified for continuously, longterm, or frequently
dangerous explosive environments, zone 0
DESCRIPTION
The CNY65Exi consists of a phototransistor optically
coupled to an infrared-emitting diode in a 4 pin plastic
package. The components are mounted opposite one
another, with a distance between input and output of
> 3.0 mm; meeting the highest of safety requirements.
The CNY65Exi is ATEX certificated for explosive
atmospheres according to the European Guide line
94/9/EG.
• Isolation voltage (V
ISO
) of 11 600 V
peak
for 1 minute
• Distance from emitter to detector through insulation
≥
3 mm
• CTR from 50 % to 300 %
• Very low coupling capacity (C
K
)
- 0.3 pF superior noise immunity between input and
output pins
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
AGENCY APPROVALS
• ATEX
:PTB 03 ATEX 2033 U
EN 60079-0 : 2012 + A11 : 2013
EN 60079-11 : 2012
EN 60079-26 : 2015
APPLICATIONS
• Electronics used in potentially explosive gas and dust
environments
- Safety related process automation and instrumentation
- Natural gas metering and flow measurement
- Power and motor switching
- Power supplies, metering, and data acquisition
- Lighting and signaling
- Petrol and grain transport and storage
ORDERING INFORMATION
DIP-4
C
N
Y
PART NUMBER
6
5
X
CTR
BIN
E
x
PACKAGE OPTION
i
15.24 mm
AGENCY CERTIFIED/PACKAGE
ATEX
DIP-4, HV, high isolation distance
50 to 300
CNY65Exi
CTR (%)
100 to 200
CNY65BExi
Rev. 2.6, 29-Nov-17
Document Number: 83541
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CNY65Exi
www.vishay.com
Vishay Semiconductors
CONDITION
SYMBOL
V
R
I
F
t
p
≤
10 μs
I
FSM
P
diss
T
j
V
CEO
V
ECO
I
C
t
p
/T = 0.5, t
p
≤
10 ms
I
CM
P
diss
T
j
P
tot
T
amb
T
stg
2 mm from case, t
≤
10 s
T
sld
VALUE
5
75
1.5
120
100
32
7
50
100
130
100
250
-55 to +85
-55 to +100
260
UNIT
V
mA
A
mW
°C
V
V
mA
mA
mW
°C
mW
°C
°C
°C
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
Note
• Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector dark current
COUPLER
Isolation resistance
Collector saturation voltage
Cut-off frequency
Coupling capacitance
V
IO
= 1 kV,
40 % relative humidity
I
F
= 10 mA, I
C
= 1 mA
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
Ω
f = 1 MHz
R
IO (1)
V
CEsat
f
c
C
k
-
-
110
-
10
12
-
-
0.3
-
0.3
-
-
Ω
V
kHz
pF
I
C
= 1 mA
I
E
= 100 μA
V
CE
= 20 V, I
f
= 0, E = 0
V
CEO
V
ECO
I
CEO
32
7
-
-
-
-
-
-
200
V
V
nA
I
F
= 50 mA
V
F
-
1.25
1.6
V
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
(1)
Related to standard climate 23/50 DIN 50014
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
I
C
/I
F
TEST CONDITION
V
CE
= 5 V, I
F
= 10 mA
PART
CNY65Exi
CNY65BExi
SYMBOL
CTR
CTR
MIN.
50
100
TYP.
100
-
MAX.
300
200
UNIT
%
%
Rev. 2.6, 29-Nov-17
Document Number: 83541
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CNY65Exi
www.vishay.com
Vishay Semiconductors
SYMBOL
P
SO
I
si
T
S
CTI
V
ISO
V
IOTM
V
IORM
T
amb
= 25 °C, V
DC
= 500 V
T
amb
= 100 °C, V
DC
= 500 V
R
IO
R
IO
VALUE
250
120
150
475
8200
12 000
1450
≥
10
12
≥
10
11
2
≥
14
DTI
3
mm
mm
40 / 110 / 21
V
RMS
V
peak
V
peak
Ω
Ω
UNIT
mW
mW
°C
SAFETY AND INSULATION RATINGS
PARAMETER
MAXIMUM SAFETY RATINGS
Output safety power
Input safety current
Safety temperature
Comparative tracking index
INSULATION RATED PARAMETERS
Maximum withstanding isolation voltage
Maximum transient isolation voltage
Maximum repetitive peak isolation voltage
Insulation resistance
Isolation resistance
Climatic classification (according to IEC 68 part 1)
Environment (pollution degree in accordance to DIN VDE 0109)
Creepage
Insulation thickness
Note
• According to DIN EN 60747-5-5 (see Fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits
SWITCHING CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
TEST CONDITION
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see Fig. 1)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see Fig. 1)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see Fig. 1)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see Fig. 1)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see Fig. 1)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω,
(see Fig. 1)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 kΩ, (see Fig. 2)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 kΩ, (see Fig. 2)
SYMBOL
t
d
t
r
t
f
t
s
t
on
t
off
t
on
t
off
MIN.
-
-
-
-
-
-
-
-
TYP.
2.6
2.4
2.4
0.3
5
3
25
42.5
MAX.
-
-
-
-
-
-
-
-
UNIT
μs
μs
μs
μs
μs
μs
μs
μs
0
I
F
I
F
+5V
I
C
= 5 mA; adjusted through
input amplitude
0
I
F
I
F
= 10 mA
+5V
I
C
R
G
= 50
t
p
= 0.01
T
t
p
= 50 µs
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50 µs
Channel I
Channel II
50
100
Oscilloscope
R
L
1 M
C
L
20 pF
95 10843
Channel I
Channel II
50
Ω
1 kΩ
Oscilloscope
R
L
≥
1 MΩ
C
L
≤
20 pF
95 10900
Fig. 1 - Test Circuit, Non-Saturated Operation
Fig. 2 - Test Circuit, Saturated Operation
Rev. 2.6, 29-Nov-17
Document Number: 83541
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CNY65Exi
www.vishay.com
Vishay Semiconductors
I
F
0
I
C
100 %
90 %
t
p
t
10 %
0
t
r
t
d
t
on
t
p
t
d
t
r
t
on
(= t
d
+ t
r
)
Pulse duration
Delay time
Rise time
Turn-on time
t
s
t
f
t
off
t
s
t
f
t
off
(= t
s
+ t
f
)
Storage time
Fall time
Turn-off time
96 11698
t
Fig. 3 - Switching Times
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
CTR
rel
- Relative Current Transfer Ratio
P
tot
- Total Power Dissipation (mW)
200
160
120
Coupled device
80
40
0
0
25
50
75
100
Phototransistor
IR-diode
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-30 -20 -10 0 10 20 30 40 50 60 70 80
V
CE
= 5 V
I
F
= 10 mA
95 11003
T
amb
- Ambient Temperature (°C)
96 11911
T
amb
- Ambient Temperature (°C)
Fig. 4 - Total Power Dissipation vs. Ambient Temperature
Fig. 6 - Relative Current Transfer Ratio vs.
Ambient Temperature
1000
1000
I
CEO
- Collector Dark Current,
with Open Base (nA)
I
F
- Forward Current (mA)
V
CE
= 20 V
I
F
= 0
100
100
10
10
1
0.1
0
96 11862
1
0.4
0.8
1.2
1.6
2.0
96 12000
0 10 20 30 40 50 60 70 80 90 100
V
F
- Forward Voltage (V)
T
amb
- Ambient Temperature (°C)
Fig. 5 - Forward Current vs. Forward Voltage
Fig. 7 - Collector Dark Current vs. Ambient Temperature
Rev. 2.6, 29-Nov-17
Document Number: 83541
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CNY65Exi
www.vishay.com
Vishay Semiconductors
V
CE
= 5 V
10
CTR - Current Transfer Ratio (%)
100
1000
V
CE
= 5 V
100
I
C
- Collector Current (mA)
1
10
0.1
0.01
0.1
95 11012
1
10
100
1
0.1
1
10
100
I
F
- Forward Current (mA)
95 11015
I
F
- Forward Current (mA)
Fig. 8 - Collector Current vs. Forward Current
Fig. 11 - Current Transfer Ratio vs. Forward Current
100
t
on
/ t
off
- Turn-On / Turn-Off Time (µs)
50
t
off
40
30
20
10
0
Saturated operation
V
S
= 5 V
R
L
= 1 kΩ
0
5
10
15
20
t
on
I
C
- Collector Current (mA)
I
F
= 50 mA
10 mA
10
5 mA
2 mA
1
1 mA
0.1
0.1
95 11013
1
10
100
V
CE
- Collector Emitter Voltage (V)
95 11017
I
F
- Forward Current (mA)
Fig. 9 - Collector Current vs. Collector Emitter Voltage
Fig. 12 - Turn-On / Turn-Off Time vs. Forward Current
1.0
0.9
t
on
/ t
off
- Turn-On / Turn-Off Time (µs)
20
t
on
15
Non-saturated
operation
V
S
= 5 V
R
L
= 100
Ω
V
CEsat
- Collector Emitter
Saturation Voltage (V)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
10
100
10 %
20 %
CTR = 50 %
10
t
off
5
0
0
2
4
6
8
10
96 11912
I
C
- Collector Current (mA)
95 11016
I
C
- Collector Current (mA)
Fig. 10 - Collector Emitter Saturation Voltage vs.
Collector Current
Fig. 13 - Turn-On / Turn-Off Time vs. Collector Current
Rev. 2.6, 29-Nov-17
Document Number: 83541
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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