a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC / JEDEC
®
(J-STD-020), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T
A
= 25 °C.
S15-1692-Rev. C, 20-Jul-15
Document Number: 63894
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
6
1.
m
m
mm
4
S
Bump
Side
View
S
N-Channel MOSFET
Si8424CDB
www.vishay.com
Vishay Siliconix
SYMBOL
t=5s
t=5s
R
thJA
R
thJA
TYPICAL
35
85
MAXIMUM
45
110
UNIT
°C/W
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Ambient
c, d
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Maximum under steady state conditions is 85 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
DS
/T
J
VG
S(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 5 V
V
DS
= 8 V, V
GS
= 0 V
V
DS
= 8 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 2 A
V
GS
= 2.5 V, I
D
= 1 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 1.8 V, I
D
= 1 A
V
GS
= 1.5 V, I
D
= 1 A
V
GS
= 1.2 V, I
D
= 0.5 A
Forward Transconductance
a
Dynamic
b
SYMBOL
TEST CONDITIONS
MIN.
8
-
-
0.35
-
-
-
5
-
-
-
-
-
-
-
TYP.
-
3
-2.6
-
-
-
-
-
0.015
0.016
0.017
0.018
0.022
30
2340
870
600
25
3.3
3.6
3.5
13
19
73
20
-
-
0.7
40
20
15
25
MAX.
-
-
-
0.8
± 100
1
10
-
0.020
0.021
0.023
0.028
0.045
-
-
-
-
40
-
-
-
30
40
150
40
2.3
c
25
1.2
80
40
-
-
UNIT
V
mV/°C
V
nA
μA
A
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
V
DS
= 4 V, I
D
= 2 A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V
DS
= 4 V, V
GS
= 0 V, f = 1 MHz
-
-
-
pF
V
DS
= 4 V, V
GS
= 4.5 V, I
D
= 2 A
V
GS
= 0.1 V, f = 1 MHz
V
DD
= 4 V, R
L
= 2
I
D @
2 A, V
GEN
= 4.5 V, R
g
= 1
-
-
-
-
-
-
-
nC
ns
T
A
= 25 °C
I
S
= 2 A, V
GS
= 0 V
-
-
-
-
-
-
-
A
V
ns
nC
ns
I
F
= 2 A, dI/dt = 100 A/μs, T
J
= 25 °C
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1692-Rev. C, 20-Jul-15
Document Number: 63894
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8424CDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
25
V
GS
= 5 V thru 1.5 V
20
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
Vishay Siliconix
15
6
10
V
GS
= 1 V
5
4
T
C
= 25
°C
2
T
C
= 125
°C
T
C
= - 55
°C
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
0.05
3500
3000
2500
2000
1500
Transfer Characteristics
0.04
R
DS(on)
- On-Resistance (Ω)
V
GS
= 1.2 V
C - Capacitance (pF)
C
iss
0.03
V
GS
= 1.5 V
0.02
V
GS
= 1.8 V
C
oss
1000
C
rss
500
0
0.01
V
GS
= 2.5 V
V
GS
= 4.5 V
0
0
5
10
15
20
25
I
D
- Drain Current (A)
0
2
4
6
V
DS
- Drain-to-Source Voltage (V)
8
On-Resistance vs. Drain Current
5
R
DS(on)
- On-Resistance (Normalized)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
5
10
15
20
25
30
-50
-25
Q
g
- Total
Gate
Charge (nC)
Capacitance
V
GS
-
Gate-to-Source
Voltage (V)
4
I
D
= 2 A
V
DS
= 4 V
V
GS
= 4.5 V, 2.5 V, 1.8 V, 1.5 V;
I
D
= 1.5 A
3
V
DS
= 2 V
V
DS
= 6.4 V
V
GS
= 1.2 V; I
D
= 0.5 A
2
1
0
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
S15-1692-Rev. C, 20-Jul-15
On-Resistance vs. Junction Temperature
Document Number: 63894
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8424CDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.05
Vishay Siliconix
10
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
T
J
= 150
°C
0.04
I
D
= 2 A
0.03
T
J
= 125
°C
T
J
= 25
°C
1
0.02
0.01
T
J
= 25
°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
0.7
On-Resistance vs. Gate-to-Source Voltage
80
0.6
60
0.5
Power (W)
75
100
125
150
V
GS(th)
(V)
0.4
I
D
= 250 μA
0.3
40
20
0.2
0.1
- 50
- 25
0
25
50
T
J
- Temperature (°C)
0
0.001
0.01
0.1
1
Time (s)
10
100
600
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1
s
10
s
0.1
T
A
= 25
°C
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
DC
Safe Operating Area, Junction-to-Ambient
S15-1692-Rev. C, 20-Jul-15
Document Number: 63894
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8424CDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
1.5
Vishay Siliconix
1.2
6
I
D
- Drain Current (A)
0.9
4
Power (W)
0.6
2
0.3
0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
0.0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Current Derating
a
Power Derating
Notes
• When mounted on 1" x 1" FR4 with full copper.
a. The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below
the package limit.
S15-1692-Rev. C, 20-Jul-15
Document Number: 63894
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
