Si2371EDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
- 30
± 12
- 4.8
- 3.8
- 3.7
b,c
- 2.9
b,c
- 20
- 1.4
- 1
b,c
1.7
1.1
1
b,c
0.6
b,c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
A
Maximum Power Dissipation
P
D
T
J
, T
stg
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
Temperature)
d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Notes:
a. T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.
t
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
100
60
Maximum
130
75
Unit
°C/W
Document Number: 63924
S13-0633-Rev. A, 25-Mar-13
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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Si2371EDS
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 2.9 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 2.9 A, V
GS
= 0 V
- 0.8
13
6
9
4
T
C
= 25 °C
- 1.4
- 20
- 1.2
20
12
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 15 V, R
L
= 5.2
I
D
- 2.9 A, V
GEN
= - 10 V, R
g
= 1
V
DD
= - 15 V, R
L
= 5.2
I
D
- 2.9 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
2.2
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 3.7 A
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 3.7 A
22.8
10.6
1.7
2.6
11
28
65
47
62
7
8
52
52
22
42
98
71
93
14
16
78
78
ns
35
16
nC
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-
5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 3.7 A
V
GS
= - 4.5 V, I
D
= - 2 A
V
GS
= - 2.5 V, I
D
= - 2 A
- 15
0.037
0.044
0.066
0.045
0.053
0.080
- 0.6
- 30
- 24
2.2
- 1.5
± 10
±1
-1
- 10
A
µA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 63924
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2
S13-0633-Rev. A, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2371EDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.030
T
J
= 25
°C
10
-3
10
-2
0.024
I
GSS
- Gate Current (mA)
I
GSS
- Gate Current (A)
10
-4
T
J
= 150
°C
10
-5
0.018
0.012
10
-6
10
-7
10
-8
10
-9
T
J
= 25
°C
0.006
0.000
0
4
8
12
16
0
4
8
12
16
20
V
GS
- Gate-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
15
V
GS
= 10 V thru 4 V
12
I
D
- Drain Current (A)
1
V
GS
= 3 V
V
GS
= 2.5
0.8
I
D
- Drain Current (A)
9
0.6
T
C
= 25
°C
6
V
GS
= 2 V
0.4
3
0.2
T
C
= 125
°C
T
C
= - 55
°C
0
0
0.5
1
1.5
2
V
DS
- Drain-to-Source Voltage (V)
0
0
0.5
1
1.5
2
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.1
1500
Transfer Characteristics
0.08
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
1200
V
GS
= 2.5 V
C
iss
900
0.06
V
GS
= 4.5 V
0.04
600
0.02
V
GS
= 10 V
300
C
oss
0
0
5
10
I
D
- Drain Current (A)
15
20
0
0
C
rss
5
10
15
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
Document Number: 63924
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S13-0633-Rev. A, 25-Mar-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2371EDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
1.5
R
DS(on)
- On-Resistance (Normalized)
I
D
= 3.7 A
V
GS
= 10 V, 3.7 A
V
GS
= 4.5 V, 2
A
1.3
V
DS
= 15 V
V
GS
- Gate-to-Source Voltage (V)
8
6
V
DS
= 8 V
4
V
DS
= 24 V
V
GS
= 2.5 V, 2 A
1.1
0.9
2
0
0
5
10
15
20
25
Q
g
- Total Gate Charge (nC)
0.7
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
30
I
D
= 250 μA
1.05
20
Power (W)
V
GS(th)
(V)
10
0
0.001
0.01
0.1
Time (s)
1
10
100
0.9
0.75
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
Single Pulse Power, Junction-to-Ambient
0.150
Threshold Voltage
100
I
D
= 4 A
0.120
10
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.090
T
J
= 125
°C
0.060
T
J
= 25
°C
0.030
1
T
J
= 25
°C
0.1
0.0
0.3
0.6
0.9
1.2
1.5
V
SD
- Source-to-Drain Voltage (V)
0.000
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
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Document Number: 63924
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4
S13-0633-Rev. A, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2371EDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
5.6
10
Limited by R
DS(on)
*
4.2
I
D
- Drain Current (A)
1
1 ms
10 ms
I
D
- Drain Current (A)
100 μs
2.8
0.1
100 ms
10s,
1 s
DC
1.4
0.01
T
A
= 25
°C
BVDSS Limited
0.001
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Safe Operating Area, Junction-to-Ambient
2
Current Derating*
0.9
0.7
1.5
Power (W)
1
Power (W)
0.5
0.4
0.5
0.2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Junction-to-Case
Power Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63924
www.vishay.com
For technical questions, contact:
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S13-0633-Rev. A, 25-Mar-13
5
This document is subject to change without notice.
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