a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s.
c. Refer to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T
A
= 25 °C.
S15-1510-Rev. B, 29-Jun-15
Document Number: 62752
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1
m
m
m
1m
Backside View
4
D
Bump
Side
View
• For smart phones and tablet PCs
G
D
P-Channel MOSFET
Si8489EDB
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
a, b
SYMBOL
t = 10 s
t = 10 s
R
thJA
TYPICAL
55
125
MAXIMUM
70
160
UNIT
°C/W
Maximum Junction-to-Ambient
c, d
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper.
b. Maximum under steady state conditions is 100 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper.
d. Maximum under steady state conditions is 190 °C/W.
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= -10 V, R
L
= 10
Ω
I
D
≅
-1.5 A, V
GEN
= -8 V, R
g
= 1
Ω
V
DD
= -10 V, R
L
= 10
Ω
I
D
≅
-1.5 A, V
GEN
= -4.5 V, R
g
= 1
Ω
V
GS
= -0.1 V, f = 1 MHz
V
DS
= -10 V, V
GS
= -10 V, I
D
= -1.5 A
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -1.5 A
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
765
125
115
17.5
8.6
1.5
2.6
14
27
20
50
25
6
8
68
28
-
-
-
27
13
-
-
-
50
40
100
50
15
20
130
60
ns
Ω
nC
pF
a
SYMBOL
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= -20 V, V
GS
= 0 V
V
DS
= -20 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≤
-5 V, V
GS
= -4.5 V
V
GS
= -10 V, I
D
= -1.5 A
V
GS
= -4.5 V, I
D
= -1.5 A
V
GS
= -2.5 V, I
D
= -1 A
V
DS
= -10 V, I
D
= -1.5 A
MIN.
-20
-
-
-0.5
-
-
-
-
-10
-
-
-
-
TYP.
-
-15
2.4
-
-
-
-
-
-
0.036
0.045
0.065
10
MAX.
-
-
-
-1.2
±1
±5
-1
-10
-
0.044
0.054
0.082
-
UNIT
V
mV/°C
V
μA
A
Ω
S
S15-1510-Rev. B, 29-Jun-15
Document Number: 62752
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8489EDB
www.vishay.com
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Vishay Siliconix
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
A
= 25 °C
I
S
= -1.5 A, V
GS
= 0 V
-
-
-
-
-
-
-
-
-
-0.8
25
9
15
10
-1.5
-20
-1.2
50
20
-
-
A
V
ns
nC
ns
I
F
= -1.5 A, dI/dt = 100 A/μs, T
J
= 25 °C
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
60
10
-2
10
-3
I
GSS
-
Gate
Current (A)
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
0
3
6
9
12
15
V
GS
-
Gate-to-Source
Voltage (V)
18
T
J
= 25
°C
T
J
= 150
°C
50
I
GSS
-
Gate
Current (mA)
40
T
J
= 25
°C
30
20
10
0
0
3
6
9
12
V
GS
-
Gate-Source
Voltage (V)
15
18
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
20
V
GS
= 5 V thru 3 V
16
I
D
- Drain Current (A)
V
GS
= 2.5 V
12
I
D
- Drain Current (A)
20
16
12
8
V
GS
= 2 V
4
V
GS
= 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
3.0
8
T
C
= 25
°C
4
T
C
= 125
°C
T
C
= - 55
°C
0
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
-
Gate-to-Source
Voltage (V)
3.0
Output Characteristics
S15-1510-Rev. B, 29-Jun-15
Transfer Characteristics
Document Number: 62752
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8489EDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.20
1200
Vishay Siliconix
1000
R
DS(on)
- On-Resistance (Ω)
0.15
V
GS
= 2.5 V
C - Capacitance (pF)
800
C
iss
0.10
V
GS
= 4.5 V
0.05
600
400
200
V
GS
= 10 V
0.00
0
4
8
12
I
D
- Drain Current (A)
16
20
0
0
C
rss
C
oss
4
8
12
16
V
DS
- Drain-to-Source Voltage (V)
20
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
V
DS
= 5 V
100
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 1.5 A
I
S
-
Source
Current (A)
10
T
J
= 150
°C
6
V
DS
= 10 V
4
V
DS
= 16 V
T
J
= 25
°C
1
2
0
0
4
8
12
16
Q
g
- Total
Gate
Charge (nC)
20
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
Gate Charge
Source-Drain Diode Forward Voltage
1.4
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 10 V, I
D
= 1.5 A
1.0
1.3
0.9
1.2
V
GS(th)
(V)
0.8
1.1
0.7
I
D
= 250 μA
1.0
0.6
V
GS
= 4.5, 2.5 V, I
D
= 1.5 A
0.8
- 50
- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
0.5
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
0.9
On-Resistance vs. Junction Temperature
S15-1510-Rev. B, 29-Jun-15
Threshold Voltage
Document Number: 62752
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8489EDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.20
Vishay Siliconix
25
I
D
= 1.5 A
R
DS(on)
- On-Resistance (Ω)
0.15
20
Power (W)
5
15
0.10
T
J
= 125
°C
10
0.05
T
J
= 25
°C
5
0.00
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
On-Resistance vs. Gate-to-Source Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
100
µs
1
1 ms
10 ms
0.1
T
A
= 25
°C
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
100 ms
10
s,
1s
DC
Single Pulse Power, Junction-to-Ambient
Note
• When mounted on 1" x 1" FR4 with full copper.
Note
a. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using
junction-to-case thermal resistance, and is more useful in
settling the upper dissipation limit for cases where additional
heatsinking is used. It is used to determine the current rating,
when this rating falls below the package limit.
Safe Operating Area, Junction-to-Ambient
5
1.5
4
1.2
Power Dissipation (W)
0
25
50
75
100
125
150
I
D
- Drain Current (A)
3
0.9
2
0.6
1
0.3
0
T
A
- Ambient Temperature (°C)
0.0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Current Derating
a
S15-1510-Rev. B, 29-Jun-15
Power Derating
Document Number: 62752
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
