TBD62502A series, TBD62503A series
TOSHIBA BiCD Integrated Circuit Silicon Monolithic
TBD62502APG, TBD62502AFG, TBD62502AFNG, TBD62502AFWG
TBD62503APG, TBD62503AFG, TBD62503AFNG, TBD62503AFWG
7channel sink type DMOS transistor array
TBD62502APG,TBD62503APG
TBD62502A series and TBD62503A series are DMOS
transistor array with 7 circuits. Please be careful about thermal
conditions during use.
Features
7 circuits built-in
High voltage
:
V
OUT
= 50 V (MAX)
High current
:
I
OUT
= 300 mA/ch (MAX)
Input voltage(output on)
:
TBD62502A series 14 V (MIN)
TBD62503A series 2.5 V (MIN)
•
Input voltage(output off)
:
TBD62502A series 7.0 V (MAX)
TBD62503A series 0.6 V (MAX)
•
Package
:
PG type DIP16-P-300-2.54A
FG type SOP16-P-225-1.27
FNG type SSOP16-P-225-0.65B
FWG type P-SOP16-0410-1.27-002
•
•
•
•
DIP16-P-300-2.54A
TBD62502AFG,TBD62503AFG
SOP16-P-225-1.27
Pin connection (top view)
O1
16
O2
15
O3
14
O4
13
O5
12
O6
11
O7
10
NC
9
TBD62502AFNG,TBD62503AFNG
1
I1
2
I2
3
I3
4
I4
5
I5
6
I6
7
8
I7 GND
SSOP16-P-225-0.65B
TBD62502AFWG,TBD62503AFWG
Pin connection may be simplified for explanatory purpose.
P-SOP16-0410-1.27-002
Weight
DIP16-P-300-2.54A
:
1.11g (Typ.)
SOP16-P-225-1.27
:
0.16g (Typ.)
SSOP16-P-225-0.65B
:
0.07g (Typ.)
P-SOP16-0410-1.27-002
:
0.15g (Typ.)
©2015 Toshiba Corporation
1
2015-07-24
TBD62502A series, TBD62503A series
Pin explanations
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin name
I1
I2
I3
I4
I5
I6
I7
GND
NC
O7
O6
O5
O4
O3
O2
O1
Function
Input pin
Input pin
Input pin
Input pin
Input pin
Input pin
Input pin
GND pin
Non-connection pin
Output pin
Output pin
Output pin
Output pin
Output pin
Output pin
Output pin
Equivalent circuit (each driver)
OUTPUT
INPUT
Clamp
Equivalent circuit may be simplified for explanatory purpose.
©2015 Toshiba Corporation
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2015-07-24
TBD62502A series, TBD62503A series
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Output voltage
Output current
Input voltage
PG (Note 1)
FG (Note 2)
Power
dissipation
FNG (Note 3)
FWG (Note 4)
Operating temperature
Storage temperature
Symbol
V
OUT
I
OUT
V
IN
Rating
50
300
−0.5
to 30
1.47
0.625
0.78
1.25
−40
to 85
−55
to 150
Unit
V
mA/ch
V
P
D
W
T
opr
T
stg
°C
°C
Note 1: Device alone. When Ta exceeds 25°C, it is necessary to do the derating with 11.8 mW/°C.
Note 2: On PCB (Size: 30 mm
×
30 mm
×
1.6 mm, Cu area: 50%, single-side glass epoxy).
When Ta exceeds 25°C, it is necessary to do the derating with 5 mW/°C.
Note 3: On PCB (Size: 50 mm
×
50 mm
×
1.6 mm, Cu area: 40%, single-side glass epoxy).
When Ta exceeds 25°C, it is necessary to do the derating with 6.24 mW/°C.
Note 4: On PCB (JEDEC 2s2p).
When Ta exceeds 25°C, it is necessary to do the derating with 10 mW/°C.
©2015 Toshiba Corporation
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2015-07-24
TBD62502A series, TBD62503A series
Operating Ranges (Ta = −40 to 85 °C)
Characteristics
Output voltage
Symbol
V
OUT
Condition
―
1 circuits ON, Ta
=
25
°C
Duty
=
10 %
t
pw
=
25 ms
7 circuits ON
Ta
=
85
°C
Duty
=
50 %
T
j
=
120
°C
1 circuits ON, Ta
=
25
°C
FG(Note 2)
Output
current
FNG(Note 3)
t
pw
=
25 ms
7 circuits ON
Ta
=
85
°C
T
j
=
120
°C
I
OUT
Duty
=
10 %
Duty
=
50 %
Min Typ. Max
―
0
0
0
0
0
0
0
0
0
0
0
0
14
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
50
250
250
190
250
250
120
250
250
130
250
250
170
25
V
25
7.0
V
0.6
mA/ch
Unit
V
PG(Note 1)
1 circuits ON, Ta
=
25
°C
t
pw
=
25 ms
7 circuits ON
Ta
=
85
°C
T
j
=
120
°C
Duty
=
10 %
Duty
=
50 %
1 circuits ON, Ta
=
25
°C
FWG(Note 4)
t
pw
=
25 ms
7 circuits ON
Ta
=
85
°C
T
j
=
120
°C
V
IN
(ON)
Duty
=
10 %
Duty
=
50 %
Input voltage
(Output on)
Input voltage
(Output off)
TBD62502A
series
TBD62503A
series
TBD62502A
series
TBD62503A
series
I
OUT
= 100 mA or upper, V
OUT
= 2 V
I
OUT
= 100 mA or upper, V
OUT
= 2 V 2.5
I
OUT
= 100
μA
or less, V
OUT
= 2 V
I
OUT
= 100
μA
or less, V
OUT
= 2 V
0
0
V
IN
(OFF)
Note 1: Device alone.
Note 2: On PCB (Size: 30 mm
×
30 mm
×
1.6 mm, Cu area: 50%, single-side glass epoxy).
Note 3: On PCB (Size: 50 mm
×
50 mm
×
1.6 mm, Cu area: 40%, single-side glass epoxy).
Note 4: On PCB (JEDEC 2s2p).
©2015 Toshiba Corporation
4
2015-07-24
TBD62502A series, TBD62503A series
Electrical Characteristics (Ta = 25 °C unless otherwise noted)
Characteristics
Output leakage current
Symbol
I
leak
Test
Circuit
1
Condition
V
OUT
= 50V, Ta = 85
°C
V
IN
= 0 V
I
OUT
= 200 mA, V
IN
=14 V
TBD62502A
series
Output voltage
(Output
ON-resistance)
TBD62503A
series
I
OUT
= 100 mA, V
IN
=5.0 V
Input current
(Output on)
TBD62502A
series
TBD62503A
series
I
IN
(ON)
Min
―
―
―
―
―
―
―
―
―
Typ.
―
0.4
(2.0)
0.2
(2.0)
0.4
(2.0)
0.2
(2.0)
―
―
―
―
―
0.4
0.8
Max
1.0
0.65
(3.25)
0.325
(3.25)
0.65
(3.25)
0.325
(3.25)
1.0
Unit
μA
V
DS
(R
ON)
I
OUT
= 100 mA, V
IN
=14 V
2
I
OUT
= 200 mA, V
IN
=5.0 V
V
(Ω)
V
IN
= 14 V
3
V
IN
= 2.5 V
4
V
IN
= 0 V, Ta = 85°C
mA
0.1
1.0
14
V
2.5
―
―
μs
μA
Input current(Output off)
TBD62502A
series
Input voltage
(Output on)
TBD62503A
series
Turn−on delay
Turn−off delay
I
IN
(OFF)
V
IN
(ON)
5
I
OUT
= 100 mA, V
OUT
= 2 V
V
OUT
= 50 V
R
L
= 200
Ω
C
L
= 15 pF
―
―
―
t
ON
t
OFF
6
©2015 Toshiba Corporation
5
2015-07-24
能源基础设施
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