BZM55B...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
D
D
D
D
D
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices
BZT55B... / TZMB...
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
V
Z
–tolerance
±
2%
96 12315
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
300K/W
x
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1
Junction tie point 35
m
m copper clad, 0.9 mm
2
copper area per electrode
Symbol
R
thJA
R
thJL
Value
500
300
Unit
K/W
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
Document Number 85597
Rev. 4, 06-Dec-00
www.vishay.com
1 (6)
BZM55B...
Vishay Telefunken
Type
BZM55B...
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
V
Znom
V
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
I
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
for
V
ZT
and
V
2.35 to 2.45
2.64 to 2.76
2.94 to 3.06
3.24 to 3.36
3.52 to 3.68
3.82 to 3.98
4.22 to 4.38
4.60 to 4.80
5.00 to 5.20
5.48 to 5.72
6.08 to 6.32
6.66 to 6.94
7.35 to 7.65
8.04 to 8.36
8.92 to 9.28
9.80 to 10.20
10.78 to 11.22
11.76 to 12.24
12.74 to 13.26
14.70 to 15.30
15.70 to 16.30
17.64 to 18.36
19.60 to 20.40
21.55 to 22.45
23.5 to 24.5
26.4 to 27.6
29.4 to 30.6
32.4 to 33.6
35.3 to 36.7
38.2 to 39.8
42.1 to 43.9
46.1 to 47.9
50.0 to 52.0
54.9 to 57.1
60.8 to 63.2
66.6 to 69.4
73.5 to 76.5
r
zjT
r
zjk
at
I
ZK
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
I
R
and I
R
at
m
A
m
A
2)
< 100 < 50
< 10 < 50
<4
< 40
<2
< 40
<2
< 40
<2
< 40
<1
< 20
< 0.5 < 10
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<5
< 0.1
<5
< 0.1
<5
< 0.1 < 10
< 0.1 < 10
< 0.1 < 10
< 0.1 < 10
< 0.1 < 10
V
R
V
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
TK
VZ
%/K
–0.09 to –0.06
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0.05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0,12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
W
W
< 85
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
www.vishay.com
2 (6)
Document Number 85597
Rev. 4, 06-Dec-00
BZM55B...
Vishay Telefunken
Characteristics
(T
j
= 25
_
C unless otherwise specified)
600
P
tot
– Total Power Dissipation ( mW )
500
400
300
200
100
0
0
95 9602
200
C
D
– Diode Capacitance ( pF )
150
V
R
= 2V
100
T
j
= 25°C
50
0
40
80
120
160
200
95 9601
0
5
10
15
20
25
T
amb
– Ambient Temperature (
°C
)
V
Z
– Z-Voltage ( V )
Total Power Dissipation vs.
Ambient Temperature
1000
V
Ztn
– Relative Voltage Change
– Voltage Change ( mV )
1.3
Diode Capacitance vs. Z–Voltage
V
Ztn
=V
Zt
/V
Z
(25°C)
1.2
TK
VZ
=10
10
–4
/K
8
6
10
–4
/K
10
–4
/K
10
–4
/K
10
–4
/K
T
j
= 25°C
100
1.1
4
2
I
Z
=5mA
10
1.0
0.9
0.8
–60
0
–2 10
–4
/K
–4
10
–4
/K
D
V
Z
1
0
95 9598
5
10
15
20
25
95 9599
0
60
120
180
240
V
Z
– Z-Voltage ( V )
T
j
– Junction Temperature (
°C
)
Typical Change of Working Voltage
under Operating Conditions at T
amb
=25
°
C
TK
VZ
– Temperature Coefficient of V
Z
( 10
–4
/K )
15
I
F
– Forward Current ( mA )
Typical Change of Working Voltage vs.
Junction Temperature
100
10
10
T
j
= 25°C
1
5
I
Z
=5mA
0
0.1
0.01
0.001
–5
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
0
95 9605
0.2
0.4
0.6
0.8
1.0
95 9600
V
F
– Forward Voltage ( V )
Temperature Coefficient of Vz vs. Z–Voltage
Forward Current vs. Forward Voltage
Document Number 85597
Rev. 4, 06-Dec-00
www.vishay.com
3 (6)
BZM55B...
Vishay Telefunken
100
r
Z
– Differential Z-Resistance (
W
)
1000
I
Z
– Z-Current ( mA )
80
P
tot
=500mW
T
amb
=25°C
60
I
Z
=1mA
100
5mA
10 10mA
40
20
0
0
4
8
12
16
20
1
0
95 9606
T
j
= 25°C
5
10
15
20
25
95 9604
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Z–Current vs. Z–Voltage
50
P
tot
=500mW
T
amb
=25°C
Differential Z–Resistance vs. Z–Voltage
I
Z
– Z-Current ( mA )
40
30
20
10
0
15
20
25
30
35
95 9607
V
Z
– Z-Voltage ( V )
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
Z–Current vs. Z–Voltage
1000
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
10
t
p
/T=0.1
t
p
/T=0.05
1
10
–1
t
p
/T=0.02
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
t
p
/T=0.01
D
T=T
jmax
–T
amb
R
thJA
=300K/W
D
T/Z
thp
)
1/2
)/(2r
zj
)
10
0
10
1
t
p
– Pulse Length ( ms )
10
2
95 9603
Thermal Response
www.vishay.com
4 (6)
Document Number 85597
Rev. 4, 06-Dec-00
BZM55B...
Vishay Telefunken
0.71
1.3
1.27
16774
Wave Soldering
0.152
1.4
9.9
25
0.355
0.9
1.0
2.8
10
0.9
Recommended foot pads (in mm)
2.5
24
95 10329
Board for R
thJA
definition (in mm)
Reflow Soldering
16773
1.2
0.8
0.8
2.4
0.8
Recommended foot pads (in mm)
Dimensions in mm
96 12072
Document Number 85597
Rev. 4, 06-Dec-00
www.vishay.com
5 (6)
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