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TMBT3904,LM

产品描述额定功率:320mW 集电极电流Ic:150mA 集射极击穿电压Vce:50V 晶体管类型:NPN 三极管
产品类别分立半导体    三极管   
文件大小231KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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TMBT3904,LM概述

额定功率:320mW 集电极电流Ic:150mA 集射极击穿电压Vce:50V 晶体管类型:NPN 三极管

TMBT3904,LM规格参数

参数名称属性值
额定功率320mW
集电极电流Ic150mA
集射极击穿电压Vce50V
晶体管类型NPN

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TMBT3904
TOSHIBA Transistor Silicon NPN Epitaxial Type
TMBT3904
Audio Frequency General Purpose Amplifier Applications
High voltage and high current
Complementary to TMBT3906
:
V
CEO
= 50 V, I
C
= 150 mA (max)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C (Note
1)
P
C (Note 2
)
T
j
T
stg
Rating
60
50
5
150
30
320
1000
150
−55
to 150
Unit
V
V
V
mA
mA
mW
mW
°C
°C
1. Base
2. Emitter
3. Collector
SOT23
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4mm x 25.4mm x 1.6mm, Cu Pad: 0.42mm
2
x 3)
Note 2: Mounted on an FR4 board.
(25.4mm x 25.4mm x 1.6mm, Cu Pad: 645mm
2
)
Marking
LW
Start of commercial production
2015-01
1
2015-01-08

 
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