• 1N5711UR-1 AVAILABLE IN
JAN, JANTX, JANTXV and JANS
•
•
•
•
PER MIL-PRF-19500/444
1N5712UR-1 AVAILABLE IN
JAN, JANTX, JANTXV and JANS
PER MIL-PRF 19500/445
SCHOTTKY BARRIER DIODES
LEADLESS PACKAGE FOR SURFACE MOUNT
METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION
1N5711UR-1
1N5712UR-1
1N6857UR-1
1N6858UR-1
CDLL2810
CDLL5711
CDLL5712
CDLL6263
CDLL6857
CDLL6858
MAXIMUM RATINGS
Operating Temperature: -65°C to +150°C
Storage Temperature: -65°C to +150°C
Operating Current:
5711 & 6263 TYPES
:33mA dc @ TEC = +140°C
2810, 5712 & 6858 Types :75mA dc @ TEC = +130°C
6857 Types
:150mA dc @ TEC = +110°C
Derating:
:All Types: Derate to 0 (zero) mA dc @ +150°C
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
CDI
TYPE
NUMBER
MINIMUM
BREAKDOWN
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM REVERSE
LEAKAGE CURRENT
V
MAXIMUM
CAPACITANCE @
R
= 0 VOLTS
f = 1.0 MH
Z
V
BR
@ 10
µ
A
VOLTS
1N5711UR-1
1N5712UR-1
1N6857UR-1
1N6858UR-1
CDLL2810
CDLL5711
CDLL5712
CDLL6263
CDLL6857
CDLL6858
70
20
20
70
20
70
20
60
20
70
V @ 1 mA
F
VOLTS
0.41
0.41
0.35
0.36
0.41
0.41
0.41
0.41
0.35
0.36
V
I
F@ F
VOLTS@mA
1.0 @ 15
1.0@35
0.75@ 35
0.65 @ 15
1.0 @ 35
1.0 @ 15
1.0 @ 35
1.0 @ 15
0.75 @ 35
0.65 @ 15
NA
200
150
150
200
100
200
150
200
150
200
1 @V
R
R
VOLTS
50
16
16
50
15
50
16
50
16
50
C
T
PICO FARADS
2.0
2.0
4.5
4.5
2.0
2.0
2.0
2.2
4.5
4.5
1
1
2
2
1
1
1
1
2
2
ESDS
CLASS
DIM
D
F
G
G1
S
MILLIMETERS
INCHES
MIN MAX MIN MAX
1.60
1.70 0.063 0.067
0.41
0.55 0.016 0.022
3.30
3.70 .130 .146
2.54 REF.
.100 REF.
0.03 MIN.
.001 MIN.
FIGURE 1
DESIGN DATA
CASE:
DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
100 ˚C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (Z
OJX): 40
˚C/W maximum
POLARITY:
Cathode end is banded.
NOTE:
Effective Minority Carrier Lifetime
(
τ
) is 100 Pico Seconds
NOTICE:
Qualification testing to J, JX, JV and JS levels for 6857 and 6858 types is underway. Contact the
factory for qualification completion dates. These two part numbers are being introduced by CDI as
“drop-in” replacements for the 5711 and 5712. They provide a more robust mechanical design and
a higher ESDS class with the only trade-off being an increase in capacitance.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
1N5711UR-1, 1N5712UR-1, 1N6857UR-1,
1N6858UR-1, CDLL5711, CDLL5712, CDLL2810,
CDLL6263, CDLL6857 and CDLL6858
100
IF – FORWARD CURRENT (mA)
IR – REVERSE CURRENT (nA)
0
.2
.4
.6
.8
1.0
1.2
10,000
10
1000
1.0
100
.1
10
.01
1.0
0
5.0
10
15
20
25
30
VF – FORWARD VOLTAGE (V)
Figure 1.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for the CDLL2810
and CDLL5712 Schottky Diodes.
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 2.
CDLL2810 and CDLL5712
Typical Variation of Reverse
Current (IR) vs. Reverse Voltage
(VR) at Various Temperatures.
50
IF – FORWARD CURRENT (mA)
IR – REVERSE CURRENT (nA)
100,000
1000
RD – DYNAMIC RESISTANCE (!!)
0
10
20
30
40
50
60
10
5
10,000
1000
100
1
.5
1
.1
.05
10
10
.01
1
0
.2
.4
.6
.8
1.0
1.2
1
.1
1.0
10
100
VF – FORWARD VOLTAGE (V)
Figure 3.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for Schottky Diode
CDLL5711.
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 4.
CDLL5711 Typical
Variation of Reverse Current (IR)
vs. Reverse Voltage (VR) at Various
Temperatures.
IF – FORWARD CURRENT (mA)
(PULSED)
Figure 5.
Typical Dynamic
Resistance (RD) vs. Forward
Current (IF).
Microchip MCU
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