NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PK632BA
PDFN 5x6P
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
V
(BR)DSS
30V
R
DS(ON)
3.3mΩ
I
D
78A
D
D
D
D
G
S
#1 S
S
S
G
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Pulsed Drain Current
1
Continuous Drain Current
Avalanche Current
Avalanche Energy
Power Dissipation
Power Dissipation
L = 0.1mH
T
C
= 25 °C
T
C
= 100 °C
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
D
I
AS
E
AS
P
D
P
D
T
j
, T
stg
LIMITS
30
±20
78
49
150
20
16
40
80
36
14
2.6
1.6
-55 to 150
mJ
W
W
°C
A
UNITS
V
V
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
2
Junction-to-Case
1
2
SYMBOL
R
JA
R
JC
TYPICAL
MAXIMUM
48
3.4
UNITS
°C / W
Pulse width limited by maximum junction temperature.
The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air
environment with T
A
=25°C.
3
Package limitation current is 40A.
REV1.0
1
E-2-1
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PK632BA
PDFN 5x6P
Halogen-Free & Lead-Free
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance
1
Forward Transconductance
1
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
g
fs
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 250A
V
DS
= 0V, V
GS
= ±20V
V
DS
= 24V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 55 °C
V
GS
= 4.5V, I
D
= 16A
V
GS
= 10V, I
D
= 20A
V
DS
= 5V, I
D
= 20A
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
Continuous Current
3
Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
2
LIMITS
UNIT
MIN TYP MAX
30
1.5
1.9
2.35
±100
1
10
3
2.1
62
4
3.3
V
nA
A
mΩ
S
C
iss
C
oss
C
rss
R
g
Q
g
V
GS
= 10V
V
GS
= 4.5V
2096
V
GS
= 0V, V
DS
= 15V, f = 1MHz
393
229
V
GS
= 0V, V
DS
= 0V, f = 1MHz
V
DS
= 15V , V
GS
= 10V,
I
D
= 20A
1.5
42
22
6.6
11
pF
Ω
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
V
DS
= 15V ,
I
D
20A, V
GS
= 10V, R
GEN
=6Ω
25
15
54
17
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25 °C)
I
S
V
SD
t
rr
Q
rr
I
F
= 20A, V
GS
= 0V
I
F
= 20A, dl
F
/dt = 100A /
S
28
15
36
1
A
V
nS
nC
Pulse test : Pulse Width
300
sec,
Duty Cycle
2％.
Independent of operating temperature.
3
Package limitation current is 40A.
REV1.0
2
E-2-1
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PK632BA
PDFN 5x6P
Halogen-Free & Lead-Free
Output Characteristics
40
VGS=3.3V
40
Transfer Characteristics
I
D
, Drain-To-Source Current(A)
I
D
, Drain-To-Source Current(A)
32
VGS=3.2V
VGS=10V
VGS=9V
VGS=7V
VGS=5V
VGS=4..5V
VGS=3.5V
VGS=3.4V
32
24
VGS=3.1V
VGS=3V
24
16
16
25℃
VGS=2.9V
8
VGS=2.8V
0
0
1
2
3
4
5
8
125℃
-20℃
0
0
1
2
3
4
5
V
DS
, Drain-To-Source Voltage(V)
V
GS
, Gate-To-Source Voltage(V)
On-Resistance VS Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
VGS=10V
ID=20A
2500
Capacitance Characteristic
Normalized Drain to Source
ON-Resistance
C , Capacitance(pF)
2000
CISS
1500
1000
500
COSS
CRSS
0
0
5
10
15
20
25
30
T
J
, Junction Temperature(˚C)
V
DS
, Drain-To-Source Voltage(V)
Gate charge Characteristics
10
Source-Drain Diode Forward Voltage
1000
V
GS
, Gate-To-Source Voltage(V)
8
I
S
, Source Current(A)
VDS=15V
ID=20A
100
6
10
4
150℃
1
25℃
2
0
0
9
18
27
36
45
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Qg , Total Gate Charge(nC)
V
SD
, Source-To-Drain Voltage(V)
REV1.0
3
E-2-1
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PK632BA
PDFN 5x6P
Halogen-Free & Lead-Free
Safe Operating Area
1000
Operation in This Area is
Limited by RDS(ON)
100
Single Pulse Maximum Power Dissipation
100
80
Single Pulse
RθJA = 48˚C/W
TA=25˚C
I
D
, Drain Current(A)
10
1ms
1
NOTE :
1.VGS= 10V
2.TA=25˚C
3.RθJA = 48˚C/W
4.Single Pulse
0.1
1
10
10ms
100ms
0.1
60
Power(W)
40
DC
20
0.01
100
0
0.001
0.01
0.1
1
10
100
V
DS
, Drain-To-Source Voltage(V)
Single Pulse Time(s)
Transient Thermal Response Curve
10
Transient Thermal Resistance
r(t) , Normalized Effective
1
Duty cycle=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
single pulse
0.001
0.01
0.1
1
10
1.Duty cycle, D= t1 / t2
2.RthJA = 48
℃/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
100
1000
Notes
T
1
, Square Wave Pulse Duration[sec]
REV1.0
4
E-2-1
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