CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C053Q8
Issued Date : 2016.11.04
Revised Date :
Page No. : 1/9
MTB030N10RQ8
Features
•
Single Drive Requirement
•
Low On-resistance
•
Fast Switching Characteristic
•
Repetitive Avalanche Rated
•
Pb-free & Halogen-free package
BV
DSS
I
D
@ T
A
=25°C, V
GS
=10V
R
DS(ON)
@V
GS
=10V, I
D
=10A
R
DS(ON)
@V
GS
=4.5V, I
D
=8A
100V
6.2A
22.7 mΩ(typ)
27.5 mΩ(typ)
Symbol
MTB030N10RQ8
Outline
SOP-8
D
D
D
D
G：Gate
D：Drain
S：Source
G
S
S
S
Pin 1
Ordering Information
Device
MTB030N10RQ8-0-T3-G
Package
SOP-8
(RoHS compliant & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB030N10RQ8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Tc=25°C, unless otherwise noted)
Parameter
Symbol
Spec. No. : C053Q8
Issued Date : 2016.11.04
Revised Date :
Page No. : 2/9
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
A
=25°C, V
GS
=10V
Continuous Drain Current @ T
A
=70°C, V
GS
=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=2mH, I
D
=12A, V
DD
=25V
Repetitive Avalanche Energy @ L=0.05mH
T
A
=25
°C
Total Power Dissipation
T
A
=70
°C
Operating Junction and Storage Temperature
Note : *1
.
Pulse width limited by maximum junction temperature
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
E
AR
P
D
Tj, Tstg
100
±20
6.2
5.0
25
*1
25
144
*3
1.6
*2
3.1
2
-55~+150
V
A
mJ
W
°C
*2. Duty cycle
≤
1%
*3. 100% tested by conditions of L=2mH, I
AS
=7A, V
GS
=10V, V
DD
=25V
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient
(Note)
Symbol
R
θJC
R
θJA
Value
20
40
Unit
°C/W
Note : 40°C / W when mounted on a 1 in
2
pad of 2 oz copper, t≤10s; 125
°
C/W when mounted on minimum pad.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
I
GSS
I
DSS
*R
DS(ON)
Dynamic
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
Ciss
Coss
Crss
MTB030N10RQ8
Min.
100
1
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
12
-
-
-
22.7
27.5
28
4.2
6.7
1378
120
19
Max.
-
2.5
-
±
100
1
25
30
37
-
-
-
-
-
-
Unit
V
S
nA
μA
m
Ω
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=10V, I
D
=5A
V
GS
=
±
20V
V
DS
=80V, V
GS
=0V
V
DS
=80V, V
GS
=0V, Tj=125°C
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=8A
V
DS
=80V, V
GS
=10V, I
D
=10A
nC
pF
V
DS
=30V, V
GS
=0V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Cont. T
C
=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Dynamic
t
d(ON)
*1, 2
-
11.6
-
tr
-
17.4
-
*1, 2
ns
t
d(OFF)
*1, 2
-
42.6
-
t
f
*1, 2
-
5.6
-
-
-
Ω
Rg
1.8
Source-Drain Diode Ratings and Characteristics
I
S
*1
-
-
6.2
A
I
SM
*3
-
-
25
V
SD
*1
-
0.84
1.2
V
trr
-
25.6
-
ns
Qrr
-
32
-
nC
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Spec. No. : C053Q8
Issued Date : 2016.11.04
Revised Date :
Page No. : 3/9
Test Conditions
V
DS
=50V, I
D
=10A, V
GS
=10V, R
GS
=1Ω
f=1MHz
I
S
=10A, V
GS
=0V
I
F
=10A, dI
F
/dt=100A/μs
Recommended Soldering Footprint
MTB030N10RQ8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
25
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V,5V,4.5V,4V,3.5V,3V
Spec. No. : C053Q8
Issued Date : 2016.11.04
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
0.4
I
D
=250
μ
A,
V
GS
=0V
20
I
D
, Drain Current(A)
15
10
5
0
0
2
4
6
8
V
DS
, Drain-Source Voltage(V)
10
V
GS
=2V
2.
5V
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
100
1.0
0.8
0.6
0.4
0.2
Tj=25°C
V
GS
=4.5V
Tj=150°C
V
GS
=10V
10
0.1
1
10
I
D
, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
500
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
3.2
I
D
=10A
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
450
400
350
300
250
200
150
100
50
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
V
GS
=10V, I
D
=10A
R
DS(ON)
@Tj=25°C : 22.7mΩ typ.
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB030N10RQ8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10000
V
GS(th)
, Normalized Threshold Voltage
Spec. No. : C053Q8
Issued Date : 2016.11.04
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
I
D
=1mA
Ciss
Capacitance---(pF)
1000
C
oss
100
I
D
=250
μ
A
f=1MHz
Crss
10
0
5
10
15
20
25
V
DS
, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
V
DS
=10V
Gate Charge Characteristics
10
8
6
4
2
0
V
DS
=80V
I
D
=10A
10
1
V
DS
=15V
0.1
Pulsed
Ta=25°C
0.01
0.001
V
GS
, Gate-Source Voltage(V)
0.01
0.1
1
, Drain Current(A)
I
D
10
100
0
5
10
15
20
25
Qg, Total Gate Charge(nC)
30
Maximum Safe Operating Area
100
I
D
, Maximum Drain Current(A)
R
DS(ON)
Limited
Maximum Drain Current vs Junction Temperature
8
I
D
, Drain Current(A)
10
100
μ
s
6
1
1ms
10ms
4
0.1
T
A
=25°C, Tj=150°C
V
GS
=10V,R
θ
JA
=40°C/W
Single Pulse
100ms
1s
DC
2
T
A
=25°C,R
θ
JA
=40°C/W,V
GS
=10V
0.01
0.01
0.1
1
10
100
V
DS
, Drain-Source Voltage(V)
1000
0
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
MTB030N10RQ8
CYStek Product Specification
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