RU30C8H
Complementary Advanced Power MOSFET
Features
• N-Channel
30V/8A,
R
DS (ON)
=12mΩ(Typ.) @ V
GS
=10V
R
DS (ON)
=16mΩ(Typ.) @ V
GS
=4.5V
D1
D1
G2
S2
G1
pin1
S1
Pin Description
D2
D2
• P-Channel
-30V/-7A,
R
DS (ON)
=18mΩ (Typ.) @ V
GS
=-10V
R
DS (ON)
=25mΩ (Typ.) @ V
GS
=-4.5V
• Reliable and Rugged
• ESD Protected
• Lead Free and Green Devices Available (RoHS Compliant)
SOP-8
D1
G1
G2
D2
Applications
• Load Switch
S1
S2
Complementary MOSFET
Absolute Maximum Ratings
Symbol
Parameter
N-Channel P-Channel
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
A
=25°C
30
±12
150
-55 to 150
2.7
-30
±12
150
-55 to 150
-2.5
V
°C
°C
A
Mounted on Large Heat Sink
I
DP
I
D
①
300μs Pulse Drain Current Tested
Continuous Drain Current(V
GS
=±10V)
T
A
=25°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
32
8
6.5
2
1.3
TBD
62.5
-28
-7
-5.6
2
1.3
TBD
62.5
A
A
②
P
D
R
JC
R
JA
③
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
W
°C/W
°C/W
Drain-Source Avalanche Ratings
E
AS
④
Avalanche Energy, Single Pulsed
TBD
TBD
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
1
www.ruichips.com
RU30C8H
Electrical Characteristics
(T
A
=25°C Unless Otherwise Noted)
Symbol
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=250µA
V
GS
=0V, I
DS
=-250µA
V
DS
=30V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
T
J
=125°C
V
DS
=-30V, V
GS
=0V
T
J
=125°C
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250µA
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±12V, V
DS
=0V
V
GS
=±12V, V
DS
=0V
V
GS
=10V, I
DS
=8A
R
DS(ON)
⑤
Parameter
Test Condition
RU30C8H
Min.
Typ.
Max.
Unit
N
P
N
30
-30
1
30
-1
-30
1.2
-1.2
1.8
-1.8
2.4
-2.4
±10
±10
12
18
16
25
15
25
25
35
V
µA
P
N
P
N
P
N
P
N
P
V
I
GSS
Gate Leakage Current
µA
Drain-Source On-state Resistance
V
GS
=-10V, I
DS
=-6A
V
GS
=4.5V, I
DS
=7A
V
GS
=-4.5V, I
DS
=-5A
mΩ
Diode Characteristics
V
SD
t
rr
⑤
Diode Forward Voltage
I
SD
=1A, V
GS
=0V
I
SD
=-1A, V
GS
=0V
N-Channel
I
SD
=8A, dl
SD
/dt=100A/µs
P-Channel
I
SD
=-7A, dl
SD
/dt=100A/µs
N
P
N
P
N
P
12
17
3
9
1.2
-1.2
V
Reverse Recovery Time
ns
Q
rr
Reverse Recovery Charge
⑥
nC
Dynamic Characteristics
R
G
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
N-Channel
V
GS
=0V,V
DS
=15V,
Frequency=1.0MHz
P-Channel
V
GS
=0V,V
DS
=-15V,
Frequency=1.0MHz
N
P
N
P
N
P
N
P
1.8
3
340
780
75
155
50
95
Ω
C
iss
Input Capacitance
C
oss
Output Capacitance
pF
C
rss
Reverse Transfer Capacitance
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
2
www.ruichips.com
RU30C8H
Electrical Characteristics
(T
A
=25°C Unless Otherwise Noted)
Symbol
Parameter
⑥
Test Condition
RU30C8H
Min.
Typ.
Max.
Unit
Dynamic Characteristics
t
d(ON)
Turn-on Delay Time
N
N-Channel
V
DD
=15V, I
DS
=8A,
V
GEN
=10V, R
G
=6Ω
P-Channel
V
DD
=-15V, I
DS
=-7A,
V
GEN
= -10V, R
G
=6Ω
P
N
P
N
P
N
P
5
9
3
6
15
21
4
7
ns
t
r
Turn-on Rise Time
t
d(OFF)
Turn-off Delay Time
t
f
Turn-off Fall Time
⑥
Gate Charge Characteristics
Q
g
Total Gate Charge
N-Channel
V
DS
=24V, V
GS
=10V,
I
DS
=8A
P-Channel
V
DS
=-24V, V
GS
= -10V,
I
DS
=-7A
N
P
N
P
N
P
8
15
1.2
2.5
2
3.5
nC
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Notes:
①Pulse
width limited by safe operating area.
②Calculated
continuous current based on maximum allowable junction temperature.
③When
mounted on 1 inch square copper board, t≤10sec. The value in any given application
depends on the user's specific board design.
④Limited
by T
Jmax.
Starting T
J
= 25°C.
⑤Pulse
test;Pulse width≤300µs, duty cycle≤2%.
⑥Guaranteed
by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
3
www.ruichips.com
RU30C8H
Ordering and Marking Information
Device
RU30C8H
Marking
RU30C8H
Package
SOP-8
Packaging Quantity Reel Size Tape width
Tape&Reel
2500
13’’
12mm
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
4
www.ruichips.com
RU30C8H
Typical Characteristics(N-Channel)
3
Power Dissipation
9
8
Drain Current
2
I
D
- Drain Current (A)
0
25
50
75
100
125
150
175
P
D
- Power (W)
7
6
5
4
3
2
1
0
25
1
0
VGS=10V
50
75
100
125
150
175
T
j
- Junction Temperature (°C)
R
DS(ON)
- On - Resistance (mΩ)
T
j
- Junction Temperature (°C)
50
100
Safe Operation Area
R
DS(ON)
limited
Drain Current
Ids=8A
40
I
D
- Drain Current (A)
10
1
10µs
100µs
1ms
10ms
DC
30
20
0.1
10
0.01
0.01
T
A
=25°C
0.1
1
10
100
1000
0
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Drain-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
Thermal Transient Impedance
ZthJA - Thermal Response (°C/W)
1000
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
100
10
1
Single Pulse
R
θJA
=
62.5°C/
0.1
0.0001
W
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
5
www.ruichips.com
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