LNH045R090/LNG045R090
Lonten N-channel 45V, 70A, 9mΩ Power MOSFET
Description
These N-Channel enhancement mode power field
effect
transistors
are
using
trench
DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and with
stand high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency fast switching applications.
Product Summary
V
DSS
R
DS(on).max
@ V
GS
=10V
I
D
45V
9mΩ
70A
Pin Configuration
Features
45V,70A,R
DS(ON).max
=9mΩ@V
GS
=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
D
TO-251
TO-252
G
S
Applications
Motor Drives
UPS
DC-DC Converter
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current ( T
C
= 25° )
C
T
C
= 25° unless otherwise noted
C
Symbol
V
DSS
Value
45
70
Unit
V
A
A
A
V
mJ
W
°
C
°
C
I
D
Continuous drain current ( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy
2)
Power Dissipation ( T
C
= 25° )
C
Storage Temperature Range
Operating Junction Temperature Range
I
DM
V
GSS
E
AS
P
D
T
STG
T
J
42
280
±20
110
83
-55 to +150
-55 to +150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Symbol
R
θJC
Value
1.5
Unit
°
C/W
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LNH045R090/LNG045R090
Package Marking and Ordering Information
Device
LNH045R090
LNG045R090
Device Package
TO-251
TO-252
Marking
LNH045R090
LNG045R090
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
T
J
= 25° unless otherwise noted
C
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BV
DSS
V
GS(th)
I
DSS
V
GS
=0 V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
DS
=45 V, V
GS
=0 V, T
J
= 25°
C
V
DS
=36 V, V
GS
=0 V, T
J
= 125°
C
45
0.9
---
---
---
---
---
---
---
---
---
---
---
---
---
6.2
8
36
---
1.8
1
10
100
-100
9
11.5
---
V
V
μA
μA
nA
nA
mΩ
mΩ
S
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
Forward transconductance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=20 V, V
DS
=0 V
V
GS
=-20 V, V
DS
=0 V
V
GS
=10 V, I
D
=20 A
V
GS
=4.5 V, I
D
=10 A
g
fs
V
DS
=5 V , I
D
=10A
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
R
g
V
GS
=0V, V
DS
=0V, F=1MHz
V
DD
= 25V,V
GS
=10V, I
D
=10 A,
R
G
=27Ω
V
DS
= 25 V, V
GS
= 0 V,
F = 1MHz
---
---
---
---
---
---
126
14
110
322
91
1.84
---
---
---
ns
---
---
---
Ω
---
---
2440
190
---
---
pF
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
DS
=25 V, I
D
=10A,
V
GS
= 10 V
---
49.3
---
---
---
8.6
8.2
---
---
nC
Drain-Source diode characteristics and Maximum Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
3)
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
S
=10A,di/dt=100A/us, T
J
=25℃
Q
rr
---
14.4
---
nC
V
GS
=0V, I
S
=10A, T
J
=25℃
---
---
---
---
---
---
---
23.3
70
280
1.2
---
A
A
V
ns
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature.
2: V
DD
=25V, V
GS
=10V, L=0.5mH, I
AS
=21A, R
G
=25Ω, Starting T
J
=25℃.
3: Pulse Test：Pulse Width
≤300μs,
Duty Cycle≤2％.
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LNH045R090/LNG045R090
Electrical Characteristics Diagrams
Figure 1. Typ. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Capacitan ce Characteristics
Figure 4. Gate Charge Waveform
Figure 5. Body-Diode Characteristics
Figure 6. Rdson-Drain Current
125°C
25°C
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LNH045R090/LNG045R090
Figure 7. Rdson-Junction Temperature(℃)
Figure 8. Maximum Safe Operating Area
10us
100us
Limited by R
DC
DS(on)
1ms
10ms
Notes:
T = 25°C
c
j
T = 150°C
Single Pulse
Figure 6. Normalized Maximum Transient Thermal Impedance
Normalized Transient
Z
θJC
Thermal Resistance
Pulse Width t (s)
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LNH045R090/LNG045R090
Test Circuit & Waveform
Figure 8. Gate Charge Test Circuit & Waveform
Figure 9. Resistive Switching Test Circuit & Waveforms
Figure 10. Unclamped Inductive Switching (UIS) Test Circuit & Waveform
Figure 11. Diode Recovery Circuit & Waveform
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