LSGN10R085W3
Lonten N-channel 100V, 60A, 8.5mΩ Power MOSFET
Description
These N-Channel enhancement mode power field
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and with
stand high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency fast switching applications.
Product Summary
V
DSS
I
D
100V
8.5mΩ
60A
effect transistors are using split gate trench DMOS R
DS(on).max
@ V
GS
=10V
Pin Configuration
Features
100V,60A,R
DS(ON).max
=8.5mΩ@V
GS
=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
PPAK5×6
G
D
Applications
Motor Drives
UPS
DC-DC Converter
N-Channel MOSFET
S
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current ( T
C
= 25°C )
1)
Continuous drain current ( T
C
= 100°C )
1)
Pulsed drain current
2)
Gate-Source voltage
Avalanche energy, single pulse
3)
Power Dissipation ( T
C
= 25°C )
Storage Temperature Range
Operating Junction Temperature Range
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
P
D
T
STG
T
J
Value
100
60
47
240
±20
110
96
-55 to +150
-55 to +150
Unit
V
A
A
A
V
mJ
W
°C
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Symbol
R
θJC
Value
1.3
Unit
°C/W
Version 1.1 2018
1
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Package Marking and Ordering Information
Device
LSGN10R085W3
Device Package
PPAK5×6
LSGN10R085W3
Marking
SGN10R085W3
Electrical Characteristics
T
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
J
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
Test Condition
Min.
Typ.
Max.
Unit
V
GS
=0 V, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
DS
=100V, V
GS
=0V, T
J
= 25°C
V
DS
=80V, V
GS
=0V, T
J
= 125°C
100
1.4
---
---
---
---
---
---
---
---
1.8
---
---
---
---
7.3
8.8
112
---
2.2
1
10
100
-100
8.5
10.5
---
V
V
μA
μA
nA
nA
mΩ
mΩ
S
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
Drain-source on-state resistance
Forward transconductance
I
GSSF
I
GSSR
R
DS(on)
g
fs
V
GS
=20 V, V
DS
=0 V
V
GS
=-20 V, V
DS
=0 V
V
GS
=10 V, I
D
=30 A
V
GS
=4.5 V, I
D
=20 A
V
DS
=5V , I
D
=30A
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
R
g
V
GS
=0V, V
DS
=0V, F=1MHz
V
DD
= 50V,V
GS
=10V, I
D
= 30A
V
DS
= 50 V, V
GS
= 0 V,
F = 1MHz
---
---
---
---
---
---
---
---
2630
453
36
10.5
63
30
96
1.1
---
---
---
---
---
---
---
---
Ω
ns
pF
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
DS
=50 V, I
D
=30A,
V
GS
= 10 V
---
---
---
10.2
6.6
45
---
---
---
nC
Drain-Source diode characteristics and Maximum Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
4)
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
V
G
=V
D
=0 V, Force Current
V
GS
=0V, I
S
=30A, T
J
=25℃
I
S
=30A, di/dt=100A/us,
T
J
=25℃
---
---
---
---
---
---
---
---
65
104
60
240
1.3
---
---
A
A
V
ns
nC
Notes:
1: The maximum junction current rating is package limited.
2: Repetitive Rating: Pulse width limited by maximum junction temperature.
3: V
DD
=50V, V
GS
=10V, L=0.5mH, I
AS
=21A, R
G
=25Ω, Starting T
J
=25℃.
4: Pulse Test：Pulse Width
≤300μs,
Duty Cycle≤2％.
Version 1.1 2018
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Electrical Characteristics Diagrams
Figure 1. Typ. Output Characteristics
LSGN10R085W3
Figure 2. Transfer Characteristics
Figure 3. Capacitance Characteristics
Figure 4. Gate Charge Waveform
Figure 5. Body-Diode Characteristics
Figure 6. Rdson-Drain Current
Version 1.1 2018
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LSGN10R085W3
Figure 7. Rdson-Junction Temperature(℃)
Figure 8. Maximum Safe Operating Area
100us
10us
1ms
Limited by R
DS(on)
DC
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
Drain-Source Voltage V
DS
(V)
Figure 11. Normalized Maximum Transient Thermal Impedance (RthJC)
Version 1.1 2018
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Test Circuit & Waveform
Figure 8. Gate Charge Test Circuit & Waveform
LSGN10R085W3
Figure 9. Resistive Switching Test Circuit & Waveforms
Figure 10. Unclamped Inductive Switching (UIS) Test Circuit & Waveform
Figure 11. Diode Recovery Circuit & Waveform
Version 1.1 2018
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