StrongIRFET™
IRFB7787PbF
IRFS7787PbF
IRFSL7787PbF
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
75V
6.9m
8.4m
76A
G
S
max
I
D
D
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
S
D
G
TO-220AB
IRFB7787PbF
S
G
D
2
Pak
IRFS7787PbF
G
S
D
TO-262
IRFSL7787PbF
G
Gate
D
Drain
S
Source
Base part number
IRFB7787PbF
IRFSL7787PbF
IRFS7787PbF
Package Type
TO-220
TO-262
D
2
-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFB7787PbF
IRFSL7787PbF
IRFS7787PbF
IRFS7787TRLPbF
RDS(on), Drain-to -Source On Resistance ( m)
40
80
ID = 46A
30
60
20
ID , Drain Current (A)
20
40
TJ = 125°C
10
20
TJ = 25°C
0
4
8
12
16
0
25
50
75
100
125
150
175
VGS, Gate-to-Source Voltage (V)
TC , CaseTemperature (°C)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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April 22, 2015
IRFB/S/SL7787PbF
Absolute Maximum Rating
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Max.
76
54
280
125
0.83
± 20
-55 to + 175
300
10 lbf·in (1.1 N·m)
144
209
See Fig 15, 16, 23a, 23b
Typ.
–––
0.50
–––
Max.
1.2
–––
62
mJ
A
mJ
Units
°C/W
Units
A
W
W/°C
V
°C
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Case-to-Sink, Flat Greased Surface
R
CS
Junction-to-Ambient
R
JA
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V V
GS
= 0V, I
D
= 250µA
0.06 ––– V/°C Reference to 25°C, I
D
= 1mA
6.9
8.4
m V
GS
= 10V, I
D
= 46A
8.2
–––
V
GS
= 6.0V, I
D
= 23A
–––
3.7
V V
DS
= V
GS
, I
D
= 100µA
–––
1.0
V
DS
= 75 V, V
GS
= 0V
µA
––– 150
V
DS
= 75V,V
GS
= 0V,T
J
=125°C
––– 100
V
GS
= 20V
nA
––– -100
V
GS
= -20V
2.1
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.138mH, R
G
= 50, I
AS
= 46A, V
GS
=10V.
I
SD
46A, di/dt
425A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 20A, V
GS
=10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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© 2015 International Rectifier
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April 22, 2015
IRFB/S/SL7787PbF
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
154
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
73
18
23
50
11
48
51
39
4020
330
205
295
380
Typ.
–––
–––
–––
10
33
39
42
61
2.2
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
=46A
109
I
D
= 46A
–––
V
DS
= 38V
nC
–––
V
GS
= 10V
–––
–––
V
DD
= 38V
–––
I
D
= 46A
ns
–––
R
G
= 2.7
–––
–––
–––
–––
–––
–––
Max. Units
76
A
280
1.2
–––
–––
–––
–––
–––
–––
V
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, VDS = 0V to 60V
V
GS
= 0V, VDS = 0V to 60V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
pF
Diode Characteristics
D
G
S
T
J
= 25°C,I
S
= 46A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
=46A,V
DS
= 75V
T
J
= 25°C
V
DD
= 64V
ns
T
J
= 125°C
I
F
= 46A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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© 2015 International Rectifier
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April 22, 2015
IRFB/S/SL7787PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.5V
10
10
4.5V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
2.5
Fig 4.
Typical Output Characteristics
ID = 46A
VGS = 10V
2.0
100
TJ = 175°C
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
7.0
ID, Drain-to-Source Current (A)
1.5
TJ = 25°C
1
1.0
VDS = 25V
60µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = Cgs + C gd , Cds SHORT ED
C rss = Cgd
C oss = C ds + C gd
Fig 6.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= 46A
VDS= 60V
VDS= 38V
VDS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
100
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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© 2015 International Rectifier
Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
Submit Datasheet Feedback
April 22, 2015
IRFB/S/SL7787PbF
1000
100µsec
ISD, Reverse Drain Current (A)
100
ID, Drain-to-Source Current (A)
100
1msec
10
10msec
TJ = 175°C
10
TJ = 25°C
1
1
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
V GS = 0V
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
10
DC
V SD, Source-to-Drain Voltage (V)
VDS, Drain-toSource Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
,
V(BR)DSS Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.8
95
Id = 1.0mA
90
Energy (µJ)
0.6
85
0.4
80
0.2
75
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Temperature ( °C )
0.0
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance ( m)
Fig 12.
Typical C
oss
Stored Energy
30.0
VGS = 5.5V
25.0
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
20.0
VGS = 10V
15.0
10.0
5.0
0
40
80
120
160
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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April 22, 2015
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