LSB55R140GF/LSD55R140GF/LSE55R140GF
LonFET
Lonten N-channel 550V, 23A, 0.14Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Power MOSFET is fabricated using
advanced super junction technology.
The resulting
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
600V
0.14Ω
69A
40nC
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 40nC)
100% UIS tested
RoHS compliant
TO-247
TO-220MF
TO-263
D
Applications
G
S
N-Channel MOSFET
Pb
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25°C )
( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Avalanche current, repetitive
3)
Power Dissipation TO-247 ( T
C
= 25°C )
- Derate above 25°C
Power Dissipation TO-220MF ( T
C
= 25°C )
- Derate above 25°C
Mounting torque To-220MF ( M2.5 screws )
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
I
DM
V
GSS
E
AS
E
AR
I
AR
V
DSS
I
D
Symbol
Value
550
23
15
69
±30
600
0.4
23
205
1.64
34
0.28
50
-55 to +150
23
69
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°C
W
W/°C
Ncm
°C
A
A
Version 2.1,Sep-2019
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LSB55R140GF/LSD55R140GF/LSE55R140GF
LonFET
Thermal Characteristics TO-247/TO-263
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
0.61
60
260
Unit
°C/W
°C/W
°C
Thermal Characteristics TO-220MF
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
at leads. (1.6mm from case for 10s)
R
θJC
R
θJA
T
sold
Symbol
Value
3.6
80
260
Unit
°C/W
°C/W
°C
Package Marking and Ordering Information
Device
LSB55R140GF
LSD55R140GF
LSE55R140GF
Device Package
TO-247
TO-220MF
TO-263-2L
Marking
LSB55R140GF
LSD55R140GF
LSE55R140GF
Units/Tube
30
50
800
Units/Real
Electrical Characteristics
Parameter
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
T
c
= 25°C unless otherwise noted
Symbol
BV
DSS
V
GS(th)
I
DSS
Test Condition
V
GS
=0 V, I
D
=0.25 mA
V
DS
=V
GS
, I
D
=0.25 mA
V
DS
=550 V, V
GS
=0 V,
T
j
= 25°C
T
j
= 125°C
Min.
550
2.0
Typ.
-
3.5
Max.
-
5.0
Unit
V
V
μA
-
-
-
-
-
-
-
-
-
10
-
-
5
-
50
-50
nA
nA
Gate leakage current, Forward
Gate leakage current, Reverse
Drain-source on-state resistance
I
GSSF
I
GSSR
R
DS(on)
V
GS
=30 V, V
DS
=0 V
V
GS
=-30 V, V
DS
=0 V
V
GS
=10 V, I
D
=11.5 A
T
j
= 25°C
T
j
= 150°C
0.11
0.29
4.5
0.14
-
-
Ω
Gate resistance
R
G
f=1 MHz, open drain
Ω
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 400 V, I
D
= 11.5 A
R
G
= 10 Ω, V
GS
=10 V
V
DS
= 100 V, V
GS
= 0 V,
f = 250 kHz
-
-
-
-
-
-
-
1730
76.2
4.1
25
35
97
12
-
-
-
-
-
-
-
ns
pF
Version 2.1,Sep-2019
Gate charge characteristics
2
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LSB55R140GF/LSD55R140GF/LSE55R140GF
LonFET
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=400 V, I
D
=11.5 A,
V
GS
=0 to 10 V
-
-
-
-
10
14
40
5.5
-
-
-
-
V
nC
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
GS
=0 V, I
F
=11.5 A
V
R
=50 V, I
F
=23 A,
dI
F
/dt=100 A/μs
-
-
-
-
-
171
1.5
16
1.2
-
-
-
V
ns
μC
A
Notes:
1. Limited by maximum junction temperature, maximum duty cycle is 0.75.
2. I
AS
= 5A, V
DD
=60V, Starting T
j
= 25°C.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Version 2.1,Sep-2019
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LSB55R140GF/LSD55R140GF/LSE55R140GF
LonFET
Electrical Characteristics Diagrams
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Common Source
T
c
= 25°C
Pulse test
V
GS
=10V
V
GS
=7V
Common Source
T
c
= 25°C
V
DS
=20 V
Pulse test
V
GS
=6.5V
V
GS
=6V
V
GS
=5.5V
Drain−source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
V
GS
= 10 V
T
c
= 25°C
Pulse test
I
DS
=0.25 mA
Pulse test
Drain current I
D
(A)
Junction temperature T
j
(°C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs. Temperature
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
V
GS
=10 V
I
DS
=11.5 A
Pulse test
Junction temperature T
j
(°C)
Junction temperature T
j
(°C)
Version 2.1,Sep-2019
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LSB55R140GF/LSD55R140GF/LSE55R140GF
LonFET
Figure 7. Capacitance Characteristics
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 8. Gate Charge Characterist
C
iss
Notes:
f = 250 kHz
V
GS
=0 V
C
oss
I
D
= 10 A
C
rss
Drain-Source Voltage V
DS
(V)
Total Gate Charge Q
G
(nC)
Figure 9.1 Maximum Safe Operating Area
TO-220MF
Limited by R
DS(on)
1ms
10us
100us
Figure 9.2 Maximum Safe Operating Area
TO-247/TO-263
Limited by R
DS(on)
10us
100us
1ms
DC
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
DC
Notes:
T = 25°C
T = 150°C
Single Pulse
j
c
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 10.1 Power Dissipation vs. Temperature
TO-220MF
Figure 10.2 Power Dissipation vs. Temperature
TO-247/TO-263
Case temperature T
c
(°C)
Case temperature T
c
(°C)
Version 2.1,Sep-2019
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