SMLVT3V3
Low voltage Transil™
Datasheet - production data
Description
A
This is a Transil diode designed specifically to
protect sensitive 3.3 V equipment against
transient overvoltages.
Transil diodes provide high overvoltage
protection by clamping action. Their
instantaneous response to transient overvoltages
make them particularly suited to protect voltage
sensitive devices such as MOS technology and
low voltage supplied ICs.
TM: Transil is a trademark of
STMicroelectronics
K
SMB
Features
Peak pulse power 600 W (10/1000 μs)
Stand-off voltage 3.3 V
Unidirectional type
Low clamping factor
Fast response time
JEDEC registered package outline
April 2017
DocID4146 Rev 5
1/8
www.st.com
This is information on a product in full production.
Characteristics
SMLVT3V3
1
Characteristics
Table 1: Absolute maximum ratings (limiting values at T
amb
= 25 °C unless otherwise specified)
Symbol
P
pp
P
I
FSM
T
stg
T
j
T
L
Notes:
(1)
For
Parameter
Peak pulse power dissipation
(1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward current
for unidirectional types
Storage temperature range
Junction temperature range
Maximum lead temperature for soldering during 10 s.
T
j
initial = T
amb
T
amb
= 50 °C
t
p
= 10 ms
T
j
initial = T
amb
Value
600
6
100
-65 to +175
-55 to +175
260
Unit
W
W
A
°C
°C
°C
a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2: Thermal resistances
Symbol
R
th(j-l)
R
th(j-a)
Junction to leads
Junction to ambient on printed circuit on recommended pad layout
Parameter
Value
20
100
Unit
°C/W
°C/W
Figure 1: Electrical characteristics (definitions)
Table 3: Electrical characteristics (T
amb
= 25 °C)
I
RM
at V
RM
Type
Max.
μA
SMLVT3V3
Notes:
(1)
Pulse
(2)
(3)
V
BR
at I
R
(1)
Min.
V
CL
at I
PP
10/1000 μs
Max.
V
7.3
A
50
V
CL
at I
PP
8/20 μs
Max.
V
10.3
A
200
αT
(2)
Max.
10
-4
/°C
-5.3
C
(3)
Typ.
pF
5200
V
3.3
V
4.1
mA
1
200
test : t
p
< 50 ms
V
BR
= αT x (T
amb
-25) x V
BR
(25 °C)
V
R
= 0 V, F = 1 MHz
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DocID4146 Rev 5
SMLVT3V3
Characteristics
1.1
Characteristics (curves)
Figure 2: Pulse waveform
Figure 3: Peak pulse power dissipation versus
initial junction temperature (printed circuit board)
1.1
1.0
0.9
0.8
Figure 4: Peak pulse power versus exponential
pulse duration
100.0
P
PP
[Tj initial]
P
PP
[Tj initial = 25° C]
P
PP
(kW)
T
j
initial = 25 °C
10.0
0.7
0.6
0.5
0.4
1.0
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
175
200
Tj initial (°C)
t
P
(ms)
0.1
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
Figure 5: Clamping voltage versus peak pulse
current (exponential waveform, maximum values)
VCL(V)
Figure 6: Junction capacitance versus reverse
applied voltage (typical values)
C(pF)
5000
4000
tp = 20 µs
F = 1 MHz
T j = 25 °C
10
8
3000
tp = 1ms
6
2000
I
pp
(A)
V
R
(V)
1000
4
0.1
1.0
10.0
100.0
1
2
3
4
5
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Characteristics
Figure 7: Peak forward voltage drop versus peak
forward current (typical values)
SMLVT3V3
Figure 8: Transient thermal impedance, junction to
ambient, versus pulse duration (PCB - FR4)
IR(Tj)
IR(Tj = 25 °C)
Figure 9: Relative variation of leakage current versus junction temperature
Z
th(j-a)
/ R
th(j-a)
Recommended pad layout
1.00
0.10
0.01
1.0E-03
t
P
(µs)
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
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DocID4146 Rev 5
SMLVT3V3
Package
information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Case: JEDEC DO-214AA molded plastic over Planar junction
Epoxy meets UL94, V0
RoHS compliant package
2.1
SMB package information
Figure 10: SMB package outline
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