SM6T
Transil™
Features
■
Peak pulse power:
– 600 W (10/1000 µs)
– 4 kW (8/20 µs)
Breakdown voltage range: from 6.8 V to 220 V
Unidirectional and bidirectional types
Low leakage current:
– 0.2 µA at 25 °C
– 1 µA at 85 °C
Operating T
j max
: 150 °C
High power capability at T
jmax
:
– 515 W (10/1000 µs)
JEDEC registered package outline
A
■
■
■
K
■
■
■
Unidirectional
Bidirectional
SMB
(JEDEC DO-214AA)
Complies with the following standards
■
IEC 61000-4-2 level 4:
– 15 kV (air discharge)
– 8 kV (contact discharge)
IEC 61000-4-5
MIL STD 883G, method 3015-7: class 3B:
– 25 kV HBM (human body model)
UL 497B, file number: QVGQ2.E136224
Resin meets UL 94, V0
MIL-STD-750, method 2026 soldererability
EIA STD RS-481 and IEC 60286-3 packing
IPC 7531 footprint
■
■
■
■
■
■
■
Description
The SM6T Transil series has been designed to
protect sensitive equipment against electrostatic
discharges according to IEC 61000-4-2 and MIL
STD 883, method 3015, and electrical overstress
according to IEC 61000-4-4 and 5. These devices
are more generally used against surges below
600 W (10/1000 µs).
Planar technology makes these devices suitable
for high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time.
SM6T are packaged in SMB (SMB footprint in
accordance with IPC 7531 standard).
TM:
Transil is a trademark of STMicroelectronics
October 2010
Doc ID 3082 Rev 9
1/10
www.st.com
10
Characteristics
SM6T
1
Table 1.
Symbol
P
PP
T
stg
T
j
T
L
Characteristics
Absolute maximum ratings
Parameter
Peak pulse power dissipation
(1)
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s.
T
j
initial = T
amb
Value
600
-65 to 150
-55 to 150
260
°C
Unit
W
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2.
Symbol
R
th(j-l)
R
th(j-a)
Thermal resistance
Parameter
Junction to leads
Junction to ambient on printed circuit on recommended pad layout
Value
20
100
Unit
°C/W
°C/W
Figure 1.
Electrical characteristics - definitions
I
I
I
PP
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
α
T
V
F
R
D
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Dynamic resistance
Unidirectional
I
F
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
V
CL
V
BR
V
RM
I
R
I
RM
I
RM
I
R
V
V
RM
V
BR
V
CL
I
PP
I
PP
Bidirectional
Figure 2.
Pulse definition for electrical characteristics
Repetitive pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
tr
tp
2/10
Doc ID 3082 Rev 9
SM6T
Table 3.
Electrical characteristics, parameter values (T
amb
= 25 °C)
I
RM
max@V
RM
Order code
25 °C 85 °C
µA
SM6T6V8A/CA
SM6T7V5A/CA
SM6T10A/CA
SM6T12A/CA
SM6T15A/CA
SM6T18A/CA
SM6T22A/CA
SM6T24A/CA
SM6T27A/CA
SM6T30A/CA
SM6T33A/CA
SM6T36A/CA
SM6T39A/CA
SM6T56A/CA
SM6T68A/CA
SM6T75A/CA
SM6T100A/CA
SM6T150A/CA
SM6T200A/CA
SM6T220A/CA
20
20
20
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
50
50
50
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
5.8 6.45
6.4 7.13
8.55 9.5
10.2 11.4
12.8 14.3
15.3 17.1
18.8 20.9
20.5 22.8
23.1 25.7
25.6 28.5
28.2 31.4
30.8 34.2
33.3 37.1
47.6 53.2
58.1 64.6
64.1 71.3
min
V
BR
@I
R (1)
typ
V
6.8
7.5
10
12
15
18
22
24
27
30
33
36
39
56
68
75
max
mA
7.14 10
7.88 10
10.5
12.6
15.8
18.9
23.1
25.2
28.4
31.5
34.7
37.8
41.0
58.8
71.4
78.8
105
158
210
231
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Characteristics
V
CL
@I
PP
R
D
V
CL
@I
PP
R
D
αT
(2)
10/1000 µs 10/1000 µs 8/20 µs 8/20 µs
max
V
(3)
10.5
11.3
14.5
16.7
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
76.6
92
103
137
207
274
328
A
(4)
57
53
41
36
28
24
20
18
16
14.5
13.1
12
11.1
7.8
6.5
5.8
4.4
2.9
2.2
2
Ω
0.059
0.065
0.098
0.114
0.193
0.263
0.375
0.444
0.569
0.690
0.840
1.01
1.16
2.28
3.17
4.17
7.27
16.9
29.1
48.5
max
V
(3)
A
(4)
13.4 298
14.5 276
18.6 215
21.7 184
27.2 147
32.5 123
39.3 102
42.8
48.3
53.5
59.0
64.3
69.7
100
121
134
93
83
75
68
62
57
40
33
30
Ω
0.021
0.024
0.038
0.049
0.078
0.111
0.159
0.189
0.240
0.293
0.357
0.427
0.504
1.030
1.503
1.84
3.24
7.13
12.7
15.2
max
10-4/ °C
5.7
6.1
7.3
7.8
8.4
8.8
9.2
9.4
9.6
9.7
9.8
9.9
10.0
10.0
10.4
10.5
10.6
10.8
10.8
10.8
85.5 95.0 100
128 143
171 190
188 209
150
200
220
178 22.5
265
15
353 11.3
388 10.3
1. Pulse test : t
p
< 50 ms
2. To calculate V
BR
versus junction temperature, use the following formula: V
BR
@ T
J
= V
BR
@ 25°C x (1 +
αT
x (T
J
– 25)).
3. To calculate maximum clamping voltage at other surge level, use the following formula: V
CL
= R
D
x I
PP
+ V
BRmax.
4. Surge capability given for both directions for unidirectional and bidirectional types.
Doc ID 3082 Rev 9
3/10
Characteristics
SM6T
Figure 3.
Peak power dissipation versus
initial junction temperature
Figure 4.
Peak pulse power versus
exponential pulse duration
P
pp
(W)
700
600
500
10.0
100.0
P
PP
(kW)
T
j
initial = 25 °C
400
300
1.0
200
100
T
j
(°C)
0
0
25
50
75
100
125
150
175
0.1
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
t
P
(ms)
Figure 5.
Clamping voltage versus peak pulse current (maximum values)
I PP( A )
1000.0
T j initial=25 °C
100.0
10.0
8/20 µs
10/1000
µs
1.0
SM6T6V8A
SM6T100A
SM6T220A
SM6T15A
SM6T30A
SM6T68A
10 ms
V CL
(V)
1000
0.1
1
10
100
4/10
Doc ID 3082 Rev 9
SM6T
Characteristics
Figure 6.
Capacitance versus reverse
applied voltage for unidirectional
types (typical values)
F=1 MHz
V
osc
=30 mV
RMS
T
j
=25 °C
Figure 7.
Capacitance versus reverse applied
voltage for bidirectional types
(typical values)
F=1 MHz
V
osc
=30 mV
RMS
T
j
=25 °C
SM6T6V8CA
10000
C (pF)
C (pF)
10000
SM6T6V8A
1000
SM6T15A
SM6T30A
1000
SM6T15CA
SM6T30CA
SM6T68CA
100
SM6T68A
SM6T100A
100
SM6T100CA
SM6T220CA
10
1
10
V R (V)
100
SM6T220A
V R (V)
10
1000
1
10
100
1000
Figure 8.
Peak forward voltage drop versus
peak forward current
(typical values)
Figure 9.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
1.0E+02
I
FM
(A)
1.00
Zth (j-a)/Rth (j-a)
Recommended pad layout
Printed circuit board FR4, copper thickness = 35 µm
1.0E+01
T
j
=125 °C
T
j
=25 °C
1.0E+00
0.10
1.0E-01
V
FM
(V)
1.0E-02
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tp
s
1.0E+02
1.0E+03
Figure 10. Thermal resistance junction to
ambient versus copper surface
under each lead
R
th(j-a)
(°C/W)
110
100
90
80
70
60
Figure 11. Leakage current versus junction
temperature (typical values)
I
R
(nA)
1.E+03
(printed circuit board FR4,
copper thickness = 35 µm)
1.E+02
V
R
=V
RM
V
RM
< 10 V
1.E+01
50
40
30
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
S
Cu
(cm²)
1.E+00
V
R
=V
RM
V
RM
≥
10 V
T
j
(° C)
1.E-01
25
50
75
100
125
150
Doc ID 3082 Rev 9
5/10
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
