SMBJ
Transil™
Features
■
Peak pulse power:
– 600 W (10/1000
μs)
– 4 kW (8/20 µs)
Stand off voltage range: from 5 V to 188 V
Unidirectional and bidirectional types
Low leakage current:
– 0.2 µA at 25 °C
– 1 µA at 85 °C
Operating T
j max
: 150 °C
High power capability at T
j max
:
– 515 W (10/1000 µs)
JEDEC registered package outline
A
■
■
■
K
Unidirectional
Bidirectional
SMB
(JEDEC DO-214AA)
■
■
■
Description
The SMBJ Transil series has been designed to
protect sensitive equipment against electrostatic
discharges according to IEC 61000-4-2, and
MIL STD 883, method 3015, and electrical over
stress according to IEC 61000-4-4 and 5. These
devices are more generally used against surges
below 600 W (10/1000
μs).
Planar technology makes these devices suitable
for high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time.
SMBJ are packaged in SMB (SMB footprint in
accordance with IPC 7531 standard).
Complies with the following standards
■
IEC 61000-4-2 level 4:
– 15 kV (air discharge)
– 8 kV (contact discharge)
IEC 61000-4-5
MIL STD 883G, method 3015-7 Class 3B:
– 25 kV HBM (human body model)
Resin meets UL 94, V0
MIL-STD-750, method 2026 soldererability
EIA STD RS-481 and IEC 60286-3 packing
IPC 7531 footprint
■
■
■
■
■
■
TM:
Transil is a trademark of STMicroelectronics
October 2010
Doc ID 5616 Rev 10
1/10
www.st.com
10
Characteristics
SMBJ
1
Table 1.
Symbol
P
PP
T
stg
T
j
T
L
Characteristics
Absolute maximum ratings (T
amb
= 25 °C)
Parameter
Peak pulse power dissipation
(1)
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s.
T
j
initial = T
amb
Value
600
-65 to +150
-55 to +150
260
Unit
W
°C
°C
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2.
Symbol
R
th(j-l)
R
th(j-a)
Thermal resistances
Parameter
Junction to leads
Junction to ambient on recommended pad layout
Value
20
100
Unit
°C/W
°C/W
Figure 1.
Electrical characteristics - definitions
I
I
I
PP
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
α
T
V
F
R
D
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Dynamic resistance
Unidirectional
I
F
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
V
CL
V
BR
V
RM
I
R
I
RM
I
RM
I
R
V
V
RM
V
BR
V
CL
I
PP
I
PP
Bidirectional
Figure 2.
Pulse definition for electrical characteristics
% Ipp
100
Repetitive pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
50
0
t
tr
tp
2/10
Doc ID 5616 Rev 10
SMBJ
Table 3.
Electrical characteristics - parameter values (T
amb
= 25 °C)
I
RM
max@V
RM
Order code
25 °C 85 °C
µA
SMBJ5.0A/CA
SMBJ6.0A/CA
SMBJ6.5A/CA
SMBJ8.5A/CA
SMBJ10A/CA
SMBJ12A/CA
SMBJ13A/CA
SMBJ15A/CA
SMBJ16A/CA
SMBJ18A/CA
SMBJ20A/CA
SMBJ22A/CA
SMBJ24A/CA
SMBJ26A/CA
SMBJ28A/CA
SMBJ30A/CA
SMBJ33A/CA
SMBJ36A/CA
SMBJ40A/CA
SMBJ48A/CA
SMBJ58A/CA
SMBJ70A/CA
SMBJ85A/CA
SMBJ100A/CA
SMBJ130A/CA
SMBJ154A/CA
SMBJ170A/CA
SMBJ188A/CA
20
20
20
20
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
50
50
50
50
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
5.0
6.0
6.5
8.5
10
12
13
15
16
18
20
22
24
26
28
30
33
36
40
48
58
70
85
100
130
154
170
188
V
BR
@I
R (1)
min
V
6.4
6.7
7.2
9.4
6.74
7.05
7.58
9.9
typ
mA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
CL
@I
PP
R
D (2)
10/1000 µs 10/1000 µs
max
V
9.2
10.3
11.2
14.4
17
19.9
21.5
24.4
26
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
77.4
93.6
113
137
162
209
246
275
328
A
(4)
68
61
56
41.7
37
31
29
25.1
23.1
21.5
19.4
17.7
16
14.9
13.8
13
11.8
10.3
9.7
8.1
6.7
5.5
4.6
3.8
3
2.4
2.2
2
Ω
0.031
0.048
0.058
0.096
0.127
0.168
0.191
0.236
0.276
0.328
0.404
0.481
0.587
0.683
0.802
0.888
1.08
1.35
1.59
2.28
3.34
4.91
7.18
10.3
16.5
23.8
30.0
48.5
V
CL
@I
PP
8/20 µs
max
V
13.4
13.7
14.5
19.5
21.7
25.3
27.2
32.5
34.4
39.3
42.8
48.3
50
53.5
59
64.3
69.7
76
84
100
121
146
178
212
265
317
353
388
A
(4)
298
290
276
205
184
157
147
123
116
102
93
83
80
75
68
62
57
52
48
40
33
27
22.5
19
15
12.6
11.3
10.3
Characteristics
R
D (2)
8/20 µs
αT
(3)
max
Ω
0.021
0.022
0.024
0.044
0.051
0.068
0.076
0.114
0.127
0.168
0.196
0.257
0.256
0.288
0.363
0.443
0.512
0.611
0.728
1.03
1.51
2.22
3.29
4.69
7.03
10.2
12.7
15.2
10-4/ °C
5.7
5.9
6.1
7.3
7.8
8.3
8.4
8.8
8.8
9.2
9.4
9.6
9.6
9.7
9.8
9.9
10.0
10.0
10.1
10.3
10.4
10.5
10.6
10.7
10.8
10.8
10.8
10.8
11.1 11.7
13.3
14
14.4 15.2
16.7 17.6
17.8 18.7
20.0 21.1
22.2 23.4
24.4 25.7
26.7 28.1
28.9 30.4
31.1 32.7
33.3 35.1
36.7 38.6
40.0 42.1
44.4 46.7
53.3 56.1
64.4 67.8
77.8 81.9
94
111
144
171
189
209
99
117
152
180
199
220
1. Pulse test : t
p
< 50 ms
2. To calculate maximum clamping voltage at other surge level,use the following formula: V
CLmax
= V
CL
- R
D
x (I
PP
- I
PPappli
)
where I
PPappli
is the surge current in the application
3. To calculate V
BR
or V
CL
versus junction temperature, use the following formulas:
V
BR
@ T
J
= V
BR
@ 25°C x (1 +
αT
x (T
J
– 25))
V
CL
@ T
J
= V
CL
@ 25°C x (1 +
αT
x (T
J
– 25))
4. Surge capability given for both directions for unidirectional and bidirectional types.
Doc ID 5616 Rev 10
3/10
Characteristics
SMBJ
Figure 3.
Peak pulse power dissipation
versus initial junction temperature
Figure 4.
Peak pulse power versus
exponential pulse duration
(T
j
initial = 25 °C)
T
j
initial = 25 °C
700
600
500
P
pp
(W)
100.0
P
PP
(kW)
10.0
400
300
1.0
200
100
T
j
(°C)
t
P
(ms)
0.1
0
0
25
50
75
100
125
150
175
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
Figure 5.
1000.0
Clamping voltage versus peak pulse current (exponential waveform, maximum values)
I PP(A )
T j initial=25 °C
100.0
10.0
8/20 µs
10/1000 µs
SMBJ188A
SMBJ5.0A
SMBJ12A
SMBJ24A
SMBJ40A
SMBJ85A
1.0
10 ms
V CL
(V)
1000
0.1
1
10
100
4/10
Doc ID 5616 Rev 10
SMBJ
Characteristics
Figure 6.
Junction capacitance versus
Figure 7.
reverse applied voltage for
unidirectional types (typical values)
C(pF)
Junction capacitance versus
reverse applied voltage for
bidirectional types (typical values)
F=1 MHz
V
osc
=30 mV
RMS
T
j
=25 °C
SMBJ5.0CA
C(pF)
10000
F=1 MHz
V
osc
=30 mV
RMS
T
j
=25 °C
SMBJ5.0A
10000
1000
SMBJ12A
SMBJ24A
1000
SMBJ12CA
SMBJ24CA
SMBJ40CA
100
SMBJ40A
100
SMBJ85CA
SMBJ188CA
SMBJ85A
V
R
(V)
10
1
10
100
SMBJ188A
V
R
(V)
10
1000
1
10
100
1000
Figure 8.
Peak forward voltage drop
versus peak forward current
(typical values)
Figure 9.
Relative variation of thermal
impedance, junction to ambient,
versus pulse duration
1.0E+02
I
FM
(A)
1.00
Z
th(j-a)
/ R
th(j-a)
Recommended pad layout
PCB FR4, copper thickness = 35 µm
1.0E+01
T
j
=125 °C
T
j
=25 °C
1.0E+00
0.10
1.0E-01
V
FM
(V)
1.0E-02
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
t
P
(s)
1.0E+03
Figure 10. Thermal resistance, junction to
ambient, versus copper surface
under each lead
110
100
90
80
70
60
R
th(J-A)
(°C/W)
PCB FR4, copper thickness = 35 µm
Figure 11. Leakage current versus junction
temperature (typical values)
1.E+03
I
R
(nA)
V
R
=V
RM
V
RM
< 10 V
1.E+02
1.E+01
50
40
30
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
SCU(cm²)
1.E+00
V
R
=V
RM
V
RM
≥
10 V
T
j
(°C)
1.E-01
25
50
75
100
125
150
Doc ID 5616 Rev 10
5/10
Microchip MCU
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