SM3407
P-Channel Enhancement-Mode MOSFET
(-30V, -4.3A)
Pb
PRODUCT SUMMARY
V
DSS
-30V
I
D
-4.3A
R
DS(on)
(m-ohm) Max
60 @ VGS = -10 V,ID=-4.3A
78 @ VGS = -4.5V,ID=-3.0A
◆
Features
1
2
3
4
◆
Ordering Information
Ordering Number
Lead Free
Halogen Free
SM3407SR L
SM3407LRL
SM3407SRG
SM3407LR G
Pin Assignment
1
G
G
2
S
S
3
D
D
．
．
．
．
Super high dense cell trench design for low RDS(on).
Rugged and reliable.
SOT-23 package
RoHS Compliant.
SM3407 Pin Assignment & Symbol
Package
SOT-23
SOT-23-3L
Packing
Tape Reel
Tape Reel
SM3407X X X
(1)Package Type
(2)Packing Type
(3)Lead Free
(1) S：SOT-23；L：SOT-23-3L
(2) R：Tape Reel
(3) G：Halogen Free；L：Lead Free
V01
1
www.sourcechips.com
SM3407
◆
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
j
, T
stg
R
θJA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
Total Power Dissipation
b
a
Parameter
Ratings
Units
V
V
A
A
W
°C
°C/W
-30
±20
-4.3
@TA=25°C
@TA=70°C
c
-20
1.4
0.9
-55 to +150
125
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)
a:Fused current that based on wire numbers and diameter
b:Repetitive Rating: Pulse width limited by the maximum junction temperature
c:1-in2 2oz Cu PCB board
◆
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
DS(on)
R
DS(on)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
On state drain current
Drain-Source On-State Resistance
Conditions
V
GS
=0V, I
D
=-250uA
V
DS
=-30V, V
GS
=0V
o
V
DS
=-30V, V
GS
=0V, T
J
=55 C
V
GS
=±20V, V
DS
=0V
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, V
GS
=-10V
V
GS
=-10V, I
D
=-4.3A
V
GS
=-4.5V, I
D
=-3.0A
Min.
-30
-
-
-
-1
-30
-
-
-
V
DS
=-15V, V
GS
=0V, f=1MHz
V
DS
=0V, V
GS
=0V, f=1MHz
d
Typ.
-
-
-
-
-1.4
-
-
-
745
440
120
6
28
3
7
9
15
75
40
22
15
-
-
Max.
-
-1
-5
±100
-3
-
60
78
-
-
-
9
36.4
3.9
9.1
18
30
150
80
30
-
-2.6
-1.3
Unit
V
uA
nA
V
A
m
●
Off Characteristics
●
On Characteristics
●
Dynamic Characteristics
d
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
V
SD
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge(4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=-2.6A
I
F
=-4.3A, dI/dt=100A/us
I
F
=-4.3A, dI/dt=100A/us
V
DS
=-15V,R
L
=15 ,
V
GEN
=-10V,
I
D
=-1A,R
G
=6
V
DS
=-15V, I
D
=-4.3A, V
GS
=-10V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
●
Switching Characteristics
nC
nS
nS
nC
A
V
●
Drain-Source Diode Characteristics
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
d: Guaranteed by design: not subject to production testing
V01
2
www.sourcechips.com
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
