SM4411
P-Channel Enhancement Mode Field Effect Transistor
Description
The SM4411 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications.
S
S
S
G
Top View
D
D
D
D
SOIC-8
General Features
V
DS
(V) = -30V
I
D
= -8 A (V
GS
= -10V)
R
DS(ON)
< 35mΩ (V
GS
= -10V)
R
DS(ON)
< 58mΩ (V
GS
= -4.5V)
D
G
S
◆
Ordering Information
Ordering Number
Lead Free
Halogen Free
SM4411PR G
SM4411PR L
Pin Assignment
1 2
3
5
6 7
8
4
S2 G2 S1 G1 D1 D1 D2 D2
Package
SOP-8
Packing
Tape Reel
SM4411 X X X
(1)Package Type
(2)Packing Type
(3)Lead Free
(1) P：
SOP-8
(2) R：Tape Reel
(3) G：Halogen Free；L：Lead Free
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SM4411
◆
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Symbol
V
DS
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
Maximum
-30
±20
-8
-6.6
-40
3
2.1
-55 to 150
Units
V
V
A
W
°C
Junction and Storage Temperature Range
a:Fused current that based on wire numbers and diameter
b:Repetitive Rating: Pulse width limited by the maximum junction temperature
c:1-in2 2oz Cu PCB board
◆
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-8A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-5A
Forward Transconductance
V
DS
=-5V, I
D
=-8A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
T
J
=125°C
-1.2
-40
24.5
33
41
14.5
-0.76
-1
-4.2
920
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
190
122
3.6
18.4
V
GS
=-10V, V
DS
=-15V, I
D
=-8A
9.3
2.7
4.9
7.1
V
GS
=-10V, V
DS
=-15V, R
L
=1.8Ω,
R
GEN
=3Ω
I
F
=-8A, dI/dt=100A/µs
I
F
=-8A, dI/dt=100A/µs
3.4
18.9
8.4
21.5
12.5
27
5
23
11.5
1120
55
32
-2
Min
-30
-1
-5
±100
-2.4
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge (10V)
Q
g
(4.5V) Total Gate Charge (4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
d: Guaranteed by design: not subject to production testing
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SM4411
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10V
25
20
-I
D
(A)
15
10
5
V
GS
=-3V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
60
50
45
R
DS(ON)
(m
Ω
)
40
35
30
25
20
15
10
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
70
60
R
DS(ON)
(m
Ω
)
-I
S
(A)
50
40
30
25°C
20
1.0E-05
10
0
3
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4
5
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
I
D
=-7.5A
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
125°C
0.80
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=-10V
Normalized On-Resistance
55
V
GS
=-4.5V
1.60
I
D
=-7.5A
1.40
V
GS
=-10V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-3.5V
-6V
-5V
-4.5V
30
25
-4V
-I
D
(A)
20
15
10
5
125°C
25°C
V
DS
=-5V
1.20
V
GS
=-4.5V
1.00
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SM4411
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
-V
GS
(Volts)
6
4
2
0
0
4
8
12
16
20
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1500
V
DS
=-15V
I
D
=-8A
Capacitance (pF)
1250
1000
750
500
250
0
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
C
oss
C
rss
100.0
T
J(Max)
=150°C, T
A
=25°C
40
10µs
100µs
30
Power (W)
T
J(Max)
=150°C
T
A
=25°C
-I
D
(Amps)
10.0
R
DS(ON)
limited
0.1s
1ms
10ms
20
1.0
1s
10s
DC
10
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
P
D
0.1
T
on
Single Pulse
0.01
0.00001
T
0.0001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
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SM4411
SO-8 Package Data
DIMENSIONS IN MILLIMETERS
SYMBOLS
DIMENSIONS IN INCHES
A
A1
A2
b
c
D
E1
e
E
h
L
aaa
θ
θ
MIN
1.45
0.00
−−−
0.33
0.19
4.80
3.80
5.80
0.25
0.40
−−−
0°
NOM
1.50
−−−
1.45
−−−
−−−
−−−
−−−
1.27 BSC
−−−
−−−
−−−
−−−
−−−
MAX
1.55
0.10
−−−
0.51
0.25
5.00
4.00
6.20
0.50
1.27
0.10
8°
MIN
0.057
0.000
−−−
0.013
0.007
0.189
0.150
0.228
0.010
0.016
−−−
0°
NOM
0.059
−−−
0.057
−−−
−−−
−−−
−−−
0.050 BSC
−−−
−−−
−−−
−−−
−−−
MAX
0.061
0.004
−−−
0.020
0.010
0.197
0.157
0.244
0.020
0.050
0.004
8°
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±
0.100 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.1000 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
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