SM9926
Dual N-Channel Enhancement-Mode MOSFET
(20V, 6A)
PRODUCT SUMMARY
V
DSS
20V
I
D
6A
R
DS(on)
(m-ohm) Max
28 @ VGS = 4.5V, ID=6A
40 @ VGS =2.5V,ID=5.2A
◆
Features
◆
Ordering Information
Ordering Number
Package
Lead Free
SM9926PRL
Halogen Free
SM9926PRG
SOP-8
2/4
G
1/3
S
5/6/7/8
D
Tape Reel
．
．
．
．
．
1
2
3
4
5
Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Lead free product is acquired.
Surface mount Package.
RoHS Compliant.
Pin 1: Source1
Pin 2: Gate1
Pin 3: Source2
Pin 4: Gate2
Pin 5 / 6 : Drain2
Pin 7 / 8 : Drain1
Pin Assignment
Packing
SM9926X X X
(1)Package Type
(2)Packing Type
(3)Lead Free
(1) P：SOP-8
(2) R：Tape Reel
(3) G：Halogen Free；L：Lead Free
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SM9926
◆
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
j
, T
stg
R
θJA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
b
o
(T
A
=25
o
C, unless otherwise noted)
Ratings
Units
V
V
A
A
W
°C
°C/W
Parameter
20
±12
a
6
20
2.0
-55 to +150
c
Total Power Dissipation @TA=25 C
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)
62.5
a:Fused current that based on wire numbers and diameter
b:Repetitive Rating: Pulse width limited by the maximum junction temperature
c:1-in2 2oz Cu PCB board
◆
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
•
Off Characteristics
BV
DSS
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
=0V, I
D
=250uA
V
DS
=20V, V
GS
=0V
V
GS
=±12V, V
DS
=0V
20
-
-
-
-
-
-
1
±100
V
uA
nA
•
On Characteristics
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Drain-Source On-State Resistance
V
DS
=V
GS
, I
D
=250uA
V
GS
=4.5V, I
D
=6.0A
V
GS
=2.5V, I
D
=5.2A
0.6
-
-
0.65
20
26
1.2
28
40
V
m
•
Dynamic Characteristics
d
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=8V, V
GS
=0V, f=1MHz
-
-
-
522.3
98.48
74.69
-
-
-
pF
•
Switching Characteristics
d
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=10V, I
D
=1A,
V
GEN
=4.5V, R
G
=6
V
DS
=10V, I
D
=6A, V
GS
=4.5V
-
-
-
-
-
-
-
6.24
1.64
1.34
10.4
4.4
27.36
4.16
-
-
-
-
-
-
-
nS
nC
•
Drain-Source Diode Characteristics
I
S
V
SD
Maximum Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=1.7A
-
-
-
-
1.7
1.2
A
V
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
d: Guaranteed by design: not subject to production testing
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