RHP030N03
Electrical
characteristics curves
1000
Ta=25°C
f=1MHz
V
GS
=0V
Data Sheet
1000
10
Ta=25°C
V
DD
= 15V
V
GS
= 10V
R
G
=10Ω
Pulsed
V
DS
=10V
Pulsed
DRAIN CURRENT : I
D
(A)
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
Ciss
100
Coss
100
1
Ta=125°C
75°C
25°C
−25°C
tf
td (off)
Crss
10
10
td (on)
tr
0.1
1
0.01
0.1
1
10
100
1
0.01
0.01
0.1
1
10
0
0.5
1
1.5
2
2.5
3
3.5
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Typical Transfer Characteristics
0.5
10
REVERSE DRAIN CURRENT : I
DR
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(Ω)
0.4
I
D
=3.0A
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
REVERSE DRAIN CURRENT : I
DR
(A)
Ta=25°C
Pulsed
V
GS
=0V
Pulsed
10
Ta=25°C
Pulsed
1
V
GS
=10V
0.3
1.5A
0.1
0.1
0V
0.2
0.01
0.01
0.1
0.001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.001
0
0.2
0.4
0.6
0.8
1
1.2
0
2
4
6
8
10
12
14
SOURCE-DRAIN VOLTAGE : V
SD
(V)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.4 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.5 Reverse Drain Current vs.
Source-Drain Voltage (
)
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage (
)
GATE THRESHOLD VOLTAGE : V
GS (th)
(V)
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(Ω)
V
GS
=4V
Pulsed
1
V
GS
=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
2.5
2
V
SD
=10V
I
D
=1mA
Pulsed
1.5
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
0.1
1
0.5
0.01
0.01
0.1
1
10
0.01
0.01
0.1
1
10
0
-50
-25
0
25
50
75
100
125
150
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
CHANNEL TEMPERATURE : Tch (°C)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙ
)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (
Ι
)
Fig.9 Gate Threshold Voltage vs.
Channel Temperature
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2014.08 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
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