EMT1 / UMT1N / IMT1A
General purpose transistor (dual transistors)
l
Outline
Datasheet
Parameter
V
CEO
I
C
Tr1 and Tr2
-50V
-150mA
EMT6
UMT6
EMT1
SC-107C
SMT6
UMT1N
SOT-363
l
Features
1)Two 2SA1037AK chips in a EMT, UMT or
SMT package.
2)Mounting possible with EMT3, UMT3 or
SMT3automatic mounting machines.
3)Transistor elements are independent,
eliminating interference.
4)Mounting cost and area can be cut in half.
IMT1A
SOT-457
l
Inner circuit
EMT1 / UMT1N
IMT1A
l
Application
GENERAL PURPOSE SMALL SIGNAL AMPLIFIER
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Packaging specifications
Part No.
EMT1
UMT1N
IMT1A
Package
EMT6
UMT6
SMT6
Package
size
1616
2021
2928
Taping
code
T2R
TN
T110
Reel size Tape width
(mm)
(mm)
180
180
180
Basic
ordering
unit.(pcs)
8000
3000
3000
Marking
T1
T1
T1
8
8
8
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© 2015 ROHM Co., Ltd. All rights reserved.
1/8
20150515 - Rev.003
EMT1 / UMT1N / IMT1A
l
Absolute maximum ratings
(T
a
= 25°C)
Datasheet
<For Tr1 and Tr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
l
Electrical characteristics
(T
a
= 25°C)
<For Tr1 and Tr2 in common>
Symbol
V
CBO
V
CEO
V
EBO
I
C
Values
-60
-50
-6
-150
150
300
150
-55 to +150
Unit
V
V
V
mA
mW/Total
mW/Total
℃
℃
EMT1/ UMT1N
IMT1A
P
D*1 *2
P
D*1 *3
T
j
T
stg
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Conditions
I
C
= -50μA
I
C
= -1mA
I
E
= -50μA
V
CB
= -60V
V
EB
= -6V
Values
Min.
-60
-50
-6
-
-
-
120
-
Typ.
-
-
-
-
-
-
-
140
Max.
-
-
-
-100
-100
-500
560
-
Unit
V
V
V
nA
nA
mV
-
MHz
DC current gain
Transition frequency
V
CE(sat)
I
C
= -50mA, I
B
= -5mA
h
FE
V
CE
= -6V, I
C
= -1mA
f
T
C
ob
V
CE
= -12V, I
E
= 2mA,
f = 100MHz
V
CB
= -12V, I
E
= 0A,
f = 1MHz
Output capacitance
-
4
5
pF
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.
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© 2015 ROHM Co., Ltd. All rights reserved.
2/8
20150515 - Rev.003
EMT1 / UMT1N / IMT1A
l
Electrical characteristic curves
(T
a
= 25°C)
<For Tr1 and Tr2 in common>
Datasheet
Fig.1 Ground Emitter Propagation
Characteristics
Fig.2 Grounded Emitter Output
Characteristics
Fig.3 DC Current Gain vs. Collector
Current (I)
Fig.4 DC Current Gain vs. Collector
Current (lI)
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© 2015 ROHM Co., Ltd. All rights reserved.
3/8
20150515 - Rev.003
EMT1 / UMT1N / IMT1A
l
Electrical characteristic curves
(T
a
= 25°C)
<For Tr1 and Tr2 in common>
Datasheet
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current(l)
Fig.6 Collector-Emitter Saturation Voltage
vs. Collector Current(ll)
Fig.7 Base-Emitter Saturation Voltage
vs. Collector Current (I)
Fig.8 Gain Bandwith Product vs.
Emitter Current
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© 2015 ROHM Co., Ltd. All rights reserved.
4/8
20150515 - Rev.003
EMT1 / UMT1N / IMT1A
l
Electrical characteristic curves
(T
a
=25°C)
<For Tr1 and Tr2 in common>
Datasheet
Fig.9 Collector Output Capacitance vs.
ollector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
Fig.10 Safe Operating Area
Fig.11 Safe Operating Area
Fig.12 Safe Operating Area
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© 2015 ROHM Co., Ltd. All rights reserved.
5/8
20150515 - Rev.003