SGL160N60UFD
IGBT
SGL160N60UFD
Ultrafast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
•
•
•
•
High speed switching
Low saturation voltage : V
CE
(sat) = 2.1 V @ I
C
= 80A
High input impedance
CO-PAK, IGBT with FRD: t
rr
= 75nS (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies.
C
G
TO-264
G
C
E
T
C
= 25°C unless otherwise noted
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
=100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGL160N60UFD
600
±
20
160
80
300
25
280
250
100
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.5
0.83
25
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
SGL160N60UFD
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 80mA, V
CE
= V
GE
I
C
= 80A
,
V
GE
= 15V
I
C
= 160A
,
V
GE
= 15V
3.5
--
--
4.5
2.1
2.6
6.5
2.6
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
5000
600
200
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
40
101
90
75
2500
1760
4260
45
105
140
122
2785
3100
5885
345
60
95
18
--
--
130
150
--
--
5000
--
--
200
250
--
--
--
520
100
150
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
V
CC
= 300 V, I
C
= 80A,
R
G
= 3.9Ω, V
GE
=15V
Inductive Load, T
C
= 25°C
V
CC
= 300 V, I
C
= 80A,
R
G
= 3.9Ω, V
GE
= 15V
Inductive Load, T
C
= 125°C
V
CE
= 300 V, I
C
= 80A,
V
GE
= 15V
Measured 5mm from PKG
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
C
= 25°C unless otherwise noted
Test Conditions
T
C
= 25°C
I
F
= 25A
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
I
F
= 25A,
di/ dt = 200 A/us
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.4
1.3
50
105
4.5
8.5
112
420
Max.
1.7
--
95
--
10
--
375
--
Units
V
ns
A
nC
©2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
SGL160N60UFD
500
Common Emitter
T
C
= 25℃
400
20V
15V
12V
240
Common Emitter
V
GE
= 15V
T
C
= 25℃
T
C
= 125℃
200
Collector Current, I
C
[A]
Collector Current, I
C
[A]
8
160
300
V
GE
= 10V
120
200
80
100
40
0
0
2
4
6
0
0.5
1
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
4
120
Common Emitter
V
GE
= 15V
100
V
CC
= 300V
Load Current : peak of square wave
Collector - Emitter Voltage, V [V]
CE
3
160A
Load Current [A]
80
2
80A
60
I
C
= 40A
1
40
20
0
0
30
60
90
120
150
0
Duty cycle : 50%
T
C
= 100℃
Power Dissipation = 130W
0.1
1
10
100
1000
Case Temperature, T
C
[
℃
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
20
Common Emitter
T
C
= 125℃
Collector - Emitter Voltage, V
CE
[V]
16
Collector - Emitter Voltage, V
CE
[V]
16
12
12
8
8
4
80A
I
C
= 40A
0
0
4
8
160A
160A
4
I
C
= 40A
0
0
4
8
12
16
20
80A
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 6. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 7. Saturation Voltage vs. V
GE
SGL160N60UFD Rev. B1
SGL160N60UFD
8000
7000
Cies
6000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
1000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 80A
T
C
= 25℃
T
C
= 125℃
Ton
Capacitance [pF]
5000
4000
3000
2000
1000
0
1
Coes
Cres
Switching Time [ns]
Tr
100
20
10
30
1
10
80
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
2000
10000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 80A
T
C
= 25℃
T
C
= 125℃
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 80A
T
C
= 25℃
T
C
= 125℃
1000
Switching Time [ns]
Eon
Eoff
Switching Loss [uJ]
Toff
Eoff
Tf
100
Tf
30
1
10
80
1000
1
10
80
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
500
1000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 3.9
Ω
T
C
= 25℃
T
C
= 125℃
Toff
Toff
100
Tf
Switching Time [ns]
100
Ton
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 3.9
Ω
T
C
= 25℃
T
C
= 125℃
40
60
80
100
120
140
160
Switching Time [ns]
Tr
Tf
10
20
20
20
40
60
80
100
120
140
160
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGL160N60UFD Rev. B1
SGL160N60UFD
20000
10000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 3.9
Ω
T
C
= 25℃
T
C
= 125℃
15
Common Emitter
R
L
= 37.5
Ω
T
C
= 25℃
Gate - Emitter Voltage, V
GE
[ V ]
12
Switching Loss [uJ]
9
300 V
6
V
CC
= 100 V
3
200 V
1000
Eoff
Eon
100
20
40
60
80
100
120
140
160
0
0
50
100
150
200
250
300
350
Collector Current, I
C
[A]
Gate Charge, Q
g
[ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
1000
I
C
MAX. (Pulsed)
I
C
MAX. (Continuous)
100us
1㎳
10
DC Operation
500
Collector Current, I
C
[A]
Collector Current, I
C
[A]
100
50us
100
10
1
Single Nonrepetitive
Pulse T
C
= 25℃
Curves must be derated
linearly with increase
in temperature
0.3
1
10
100
1000
Safe Operating Area
V
GE
=20V, T
C
=100 C
1
1
10
100
1000
o
0.1
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristic
Fig 16. Turn-Off SOA Characteristics
1
0.5
Thermal Response [Zthjc]
0.2
0.1
0.1
0.05
0.02
0.01
0.01
single pulse
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
1E-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
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