CNY17-1, CNY17-3, CNY17-2, CNY17-4 Phototransistor Optocouplers
July 2005
CNY17-1, CNY17-3, CNY17-2, CNY17-4
Phototransistor Optocouplers
Features
■
CNY17-1/2/3 are also available in white package by
specifying -M suffix (eg. CNY17-2-M)
■
UL recognized (File # E90700)
■
VDE recognized
– 102497 for white package
– Add option V for white package (e.g., CNY17-2V-M)
– File #102497
– Add option ‘300’ for black package (e.g., CNY17-2.300)
– File #94766
■
Current transfer ratio in select groups
■
High BV
CEO
—70V minimum
Applications
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
■
Appliance sensor systems
■
Industrial controls
Description
The CNY17 series consists of a Gallium Arsenide IRED
coupled with an NPN phototransistor.
White Package (-M Suffix)
Black Package (No -M Suffix)
6
6
1
1
6
1
6
1
6
6
1
1
Schematic
ANODE 1
6 BASE
CATHODE 2
5 COL
3
4 EMITTER
©2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Phototransistor Optocouplers
Parameters
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
Symbol
T
STG
T
OPR
T
SOL
P
D
Device
All
All
All
-M
non -M
-M
non -M
Value
-55 to +150
-55 to +100
260 for 10 sec
250
260
2.94
3.50
Units
°C
°C
°C
mW
mW/°C
EMITTER
Continuous Forward Current
I
F
V
R
I
F
(pk)
P
D
-M
non -M
Reverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
All
-M
non -M
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
-M
non -M
-M
non -M
DETECTOR
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
P
D
-M
non -M
-M
non -M
150
200
1.76
2.67
mW/°C
mW
60
90
6
1.5
3.0
120
135
1.41
1.8
mW/°C
mW
V
A
mA
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Parameters
EMITTER
Input Forward Voltage
I
F
= 60 mA
I
F
= 10 mA
Capacitance
V
F
= 0 V, f = 1.0 MHz
C
J
I
R
V
F
-M
non -M
non -M
-M
Reverse Leakage Current V
R
= 6 V
DETECTOR
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Collector
Leakage Current
Collector to Emitter
Collector to Base
Capacitance
Collector to Emitter
Collector to Base
Emitter to Base
I
C
= 1.0 mA, I
F
= 0
I
C
= 10 µA, I
F
= 0
I
E
= 100 µA, I
F
= 0
V
CE
= 10 V, I
F
= 0
V
CB
= 10 V, I
F
= 0
V
CE
= 0, f = 1 MHz
V
CB
= 0, f = 1 MHz
V
EB
= 0, f = 1 MHz
BV
CEO
BV
CBO
BV
ECO
I
CEO
I
CBO
C
CE
C
CB
C
EB
All
All
All
All
All
All
All
All
70
70
7
100
120
10
1
50
20
V
V
V
nA
nA
pF
pF
pF
All
1.35
1.15
50
18
0.001
10
µA
1.65
1.50
pF
V
Test Conditions
Symbol
Device
Min
Typ
Max
Units
8
20
10
2
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2
www.fairchildsemi.com
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Phototransistor Optocouplers
Isolation Characteristics
Characteristic
Input-Output Isolation Voltage
Test Conditions Symbol
f = 60 Hz, t = 1 min.
V
ISO
R
ISO
C
ISO
Device
Black Package
‘-M’ White Package
Min
5300
7500
1011
Typ** Max
Units
Vac(rms)*
Vac(pk)
Ω
Isolation Resistance
Isolation Capacitance
V
I-O
= 500 VDC
V
I-O
= Ø, f = 1 MHz
All
Black Package
‘-M’ White Package
0.5
0.2
pF
Note
* 5300 Vac(rms) for 1 minute equates to approximately 9000 Vac (pk) for 1 second
** Typical values at T
A
= 25°C
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
DC Characteristics
Current Transfer Ratio,
Collector to Emitter
Test Conditions
I
F
= 10 mA, V
CE
= 5 V
Symbol
CTR
Device
CNY17-1/-1-M
CNY17-2/-2-M
CNY17-3/-3-M
CNY17-4
Min Typ Max Units
40
63
100
160
80
125
200
320
.40
V
%
Saturation Voltage
I
F
= 10 mA, I
C
= 2.5 mA
V
CE(SAT)
All
AC Characteristics
Non-Saturated Switching Times
Test Conditions
Symbol
t
on
t
off
t
d
t
r
t
s
t
f
t
on
Device
non -M
non -M
-M
-M
-M
-M
Min Typ Max Units
10
10
5.6
4.0
4.1
3.5
µs
µs
µs
µs
µs
µs
Turn-On Time (Fig.19 and Fig.20) R
L
= 100
Ω
, I
C
= 2 mA, V
CC
= 10 V
Turn-Off Time (Fig.19 and Fig.20) R
L
= 100
Ω
, I
C
= 2 mA, V
CC
= 10 V
Delay Time (Fig.19 and Fig.20)
Rise Time (Fig.19 and Fig.20)
Storage Time (Fig.19 and Fig.20)
Fall Time (Fig.19 and Fig.20)
Saturated Switching Times
Turn-On Time (Fig.19 and Fig.20) I
F
= 20 mA, V
CE
= 0.4 V
I
F
= 10 mA, V
CE
= 0.4 V
I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
Ω
CNY17-1
CNY17-2,
CNY17-3,
CNY17-4
5.5
8.0
µs
Rise-Time (Fig.19 and Fig.20)
I
F
= 20 mA, V
CE
= 0.4 V
I
F
= 10 mA, V
CE
= 0.4 V
t
r
CNY17-1
CNY17-2,
CNY17-3,
CNY17-4
CNY17-1-M
CNY17-2-M,
CNY17-3-M
4.0
6.0
µs
I
F
= 20 mA, V
CC
= 5 V, R
L
= 1 K
Ω
I
F
= 10 mA, V
CC
= 5 V, R
L
= 1 K
Ω
Delay Time (Fig.19 and Fig.20)
I
F
= 20 mA, V
CC
= 5 V, R
L
=1 K
Ω
I
F
= 10 mA, V
CC
= 5 V, R
L
=1 KΩ
Turn-Off Time (Fig.19 and Fig.20) I
F
= 20 mA, V
CE
= 0.4 V
I
F
= 10 mA, V
CE
= 0.4 V
t
off
t
d
4.0
6.0
5.5
8.0
34.0
39.0
ms
µs
CNY17-1-M
CNY17-2,
CNY17-3
CNY17-1
CNY17-2,
CNY17-3,
CNY17-4
3
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2
www.fairchildsemi.com
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Phototransistor Optocouplers
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.) (Continued)
DC Characteristics
Fall-Time (Fig. 19 and Fig. 20)
Test Conditions
I
F
= 20 mA, V
CE
= 0.4V
I
F
= 10 mA, V
CE
= 0.4V
Symbol
t
f
Device
CNY17-1
CNY17-2,
CNY17-3,
CNY17-4
CNY17-1-M
CNY17-2-M,
CNY17-3-M,
Min Typ Max Units
20.0
24.0
µs
I
F
= 20 mA, V
CC
= 5V, R
L
= 1KΩ
I
F
= 10 mA, V
CC
= 5V, R
L
= 1KΩ
Storage Time (Fig. 19 and Fig.
20)
I
F
= 20 mA, V
CC
= 5V, R
L
= 1KΩ
I
F
= 10 mA, V
CC
= 5V, R
L
= 1KΩ
t
s
20.0
24.0
34.0
39.0
µs
CNY17-1-M
CNY17-2-M,
CNY17-3-M,
4
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2
www.fairchildsemi.com
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Phototransistor Optocouplers
Fig.1 Normalized CTR vs. Forward Current
(Black Package)
1.4
V
CE
= 5.0V
T
A
= 25˚C
1.2
Normalized to
I
F
= 10 mA
1.6
Fig.2 Normalized CTR vs. Forward Current
(White Package)
V
CE
= 5.0V
T
A
= 25˚C
Normalized to
I
F
= 10 mA
1.4
1.2
1.0
NORMALIZED CTR
1.0
0.8
NORMALIZED CTR
0
5
10
15
20
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0.0
0.0
0
2
4
6
8
10
12
14
16
18
20
I
F
- FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
(Black Package)
1.6
Fig. 4 Normalized CTR vs. Ambient Temperature
(White Package)
1.4
1.4
I
F
= 5 mA
1.2
I
F
= 5 mA
1.2
1.0
NORMALIZED CTR
I
F
= 10 mA
1.0
NORMALIZED CTR
I
F
= 10 mA
0.8
I
F
= 20 mA
0.6
0.8
0.6
Normalized to
I
F
= 10 mA
T
A
= 25˚C
-50
-25
0.4
I
F
= 20 mA
Normalized to
I
F
= 10 mA
T
A
= 25˚C
-40
-20
0
0.4
-75
0
25
50
75
100
125
0.2
-60
20
40
60
80
100
T
A
- AMBIENT TEMPERATURE (˚C)
T
A
- AMBIENT TEMPERATURE (˚C)
Fig. 5 CTR vs. RBE (Unsaturated)
(Black Package)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
100
1000
I
F
= 5 mA
I
F
= 20 mA
I
F
= 10 mA
V
CE
= 5.0 V
Fig. 6 CTR vs. RBE (Unsaturated)
(White Package)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
1.0
0.9
0.8
I
F
= 10 mA
0.7
I
F
= 5 mA
0.6
0.5
0.4
0.3
0.2
V
CE
= 5.0 V
0.1
0.0
10
100
1000
I
F
= 20 mA
1.0
R
BE
- BASE RESISTANCE (kΩ)
R
BE
- BASE RESISTANCE (kΩ)
5
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2
www.fairchildsemi.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
