NLAST4599
Low Voltage Single Supply
SPDT Analog Switch
The NLAST4599 is an advanced high speed CMOS single pole −
double throw analog switch fabricated with silicon gate CMOS
technology. It achieves high speed propagation delays and low ON
resistances while maintaining low power dissipation. This switch
controls analog and digital voltages that may vary across the full
power−supply range (from V
CC
to GND).
The device has been designed so the ON resistance (R
ON
) is much
lower and more linear over input voltage than R
ON
of typical CMOS
analog switches.
The channel select input structure provides protection when
voltages between 0 V and 5.5 V are applied, regardless of the supply
voltage. This input structure helps prevent device destruction caused
by supply voltage − input/output voltage mismatch, battery backup,
hot insertion, etc.
Features
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MARKING
DIAGRAMS
TSOP−6
DT SUFFIX
CASE 318G
1
A1AYWG
G
•
•
•
•
•
•
•
•
•
•
•
Select Pin Compatible with TTL Levels
Channel Select Input Over−Voltage Tolerant to 5.5 V
Fast Switching and Propagation Speeds
Break−Before−Make Circuitry
Low Power Dissipation: I
CC
= 2
mA
(Max) at T
A
= 25°C
Diode Protection Provided on Channel Select Input
Improved Linearity and Lower ON Resistance over Input Voltage
Latch−up Performance Exceeds 300 mA
ESD Performance: HBM > 2000 V; MM > 200 V
Chip Complexity: 38 FETs
NLVAST Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SC−88/SC−70/SOT−363
DF SUFFIX
CASE 419B
1
A1
A
Y
W
M
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Date Code*
= Pb−Free Package
A1 M
G
G
(Note: Microdot may be in either location)
*Date Code orientation and/or position and underbar
may vary depending upon manufacturing location.
FUNCTION TABLE
Select
ON Channel
NC
NO
SELECT
1
V
+
2
GND
3
6
5
4
NO
COM
NC
L
H
Figure 1. Pin Assignment
CHANNEL SELECT
COM
U
2X0
2X1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Figure 2. Logic Symbol
©
Semiconductor Components Industries, LLC, 2006
August, 2017 − Rev. 9
U
U
NO
NC
1
Publication Order Number:
NLAST4599/D
NLAST4599
MAXIMUM RATINGS
(Note 1)
Parameter
Positive DC Supply Voltage
Analog Input Voltage (V
NO
or V
COM
)
Digital Select Input Voltage
DC Current, Into or Out of Any Pin
Power Dissipation in Still Air
Storage Temperature Range
Lead Temperature, 1mm from Case for 10 seconds
Junction Temperature Under Bias
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
Above V
CC
and Below GND at 125°C (Note 5)
SC−88
TSOP6
SC−88
TSOP6
Symbol
V
CC
V
IS
V
IN
I
IK
P
D
T
STG
T
L
T
J
V
ESD
Value
−0.5 to +7.0
−0.5
≤
V
IS
≤
V
CC
)0.5
−0.5
≤
V
I
≤
+ 7.0
$50
200
200
−65 to +150
260
150
2000
200
N/A
$300
333
333
Unit
V
V
V
mA
mW
°C
°C
°C
V
Latchup Performance
Thermal Resistance
I
LATCHUP
q
JA
mA
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the
Recommended Operating Conditions.
2. Tested to EIA/JESD22−A114−A
3. Tested to EIA/JESD22−A115−A
4. Tested to JESD22−C101−A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Characteristics
DC Supply Voltage
Digital Select Input Voltage
Analog Input Voltage (NC, NO, COM)
Operating Temperature Range
Input Rise or Fall Time
SELECT
V
CC
= 3.3 V + 0.3 V
V
CC
= 5.0 V + 0.5 V
Symbol
V
CC
V
IN
V
IS
T
A
t
r
, t
f
0
0
100
20
Min
2.0
GND
GND
−55
Max
5.5
5.5
V
CC
+125
Unit
V
V
V
°C
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS TIME
TO 0.1% BOND FAILURES
Junction
Temperature
5C
80
90
100
110
120
130
140
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
T
J
= 130°C
T
J
= 120°C
T
J
= 100°C
T
J
= 110°C
T
J
= 90°C
T
J
= 80°C
100
TIME, YEARS
1
1
10
1000
Figure 3. Failure Rate vs. Time Junction Temperature
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2
NLAST4599
DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)
Guaranteed Limit
Parameter
Minimum High−Level Input
Voltage, Select Input
Maximum Low−Level Input
Voltage, Select Input
Maximum Input Leakage
Current, Select Input
Power Off Leakage Current
Maximum Quiescent Supply
Current
V
IN
= 5.5 V or GND
V
IN
= 5.5 V or GND
Select and V
IS
= V
CC
or GND
Condition
Symbol
V
IH
V
CC
3.0
4.5
5.5
3.0
4.5
5.5
5.5
0
5.5
−55 to 255C
2.0
2.0
2.0
0.5
0.8
0.8
+0.1
+10
1.0
<855C
2.0
2.0
2.0
0.5
0.8
0.8
+1.0
+10
1.0
<1255C
2.0
2.0
2.0
0.5
0.8
0.8
+1.0
+10
2.0
Unit
V
V
IL
V
I
IN
I
OFF
I
CC
mA
mA
mA
DC ELECTRICAL CHARACTERISTICS − Analog Section
Guaranteed Limit
Parameter
Maximum “ON” Resistance
(Figures 17 − 23)
Condition
V
IN
= V
IL
or V
IH
V
IS
= GND to V
CC
I
IN
I < 10.0 mA
V
IN
= V
IL
or V
IH
I
IN
I < 10.0 mA
V
IS
= 1V, 2V, 3.5V
V
IN
= V
IL
or V
IH
I
IN
I < 10.0 mA
V
NO
or V
NC
= 3.5 V
V
IN
= V
IL
or V
IH
V
NO
or V
NC
= 1.0 V
COM
4.5 V
V
IN
= V
IL
or V
IH
V
NO
1.0 V or 4.5 V with V
NC
floating
or
V
NO
1.0 V or 4.5 V with V
NO
floating
V
COM
= 1.0 V or 4.5 V
Symbol
R
ON
V
CC
2.5
3.0
4.5
5.5
4.5
−55 to 255C
85
45
30
25
4
<855C
95
50
35
30
4
<1255C
105
55
40
35
5
Unit
W
ON Resistance Flatness
(Figures 17 − 23)
ON Resistance Match
Between Channels
NO or NC Off Leakage
Current (Figure 9)
COM ON Leakage
Current (Figure 9)
R
FLAT
(ON)
W
DR
ON
(ON)
4.5
2
2
3
W
I
NC(OFF)
I
NO(OFF)
I
COM(ON)
5.5
5.5
1
1
10
10
100
100
nA
nA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NLAST4599
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
Guaranteed Max Limit
V
CC
Parameter
Turn−On Time
(Figures 12 and 13)
Test Conditions
R
L
= 300
W,
C
L
= 35 pF
(Figures 5 and 6)
Symbol
t
ON
(V)
2.5
3.0
4.5
5.5
2.5
3.0
4.5
5.5
2.5
3.0
4.5
5.5
V
IS
(V)
2.0
2.0
3.0
3.0
2.0
2.0
3.0
3.0
2.0
2.0
3.0
3.0
−55 to 25_C
Min
5
5
2
2
1
1
1
1
1
1
1
1
Typ*
23
16
11
9
7
5
4
3
12
11
6
5
Max
28
21
16
14
12
10
9
8
<85_C
Min
5
5
2
2
1
1
1
1
1
1
1
1
Max
30
25
20
20
15
15
12
12
<125_C
Min
5
5
2
2
1
1
1
1
1
1
1
1
Max
30
25
20
20
15
15
12
12
Unit
ns
Turn−Off Time
(Figures 12 and 13)
R
L
= 300
W,
C
L
= 35 pF
(Figures 5 and 6)
t
OFF
ns
Minimum Break−Before−
Make Time
V
IS
= 3.0 V (Figure 4)
R
L
= 300
W,
C
L
= 35 pF
t
BBM
ns
Typical @ 25, VCC = 5.0 V
Maximum Input Capacitance, Select Input
Analog I/O (switch off)
Common I/O (switch off)
Feedthrough (switch on)
*Typical Characteristics are at 25_C.
C
IN
C
NO
or C
NC
C
COM
C
(ON)
8
10
10
20
pF
Parameter
Maximum On−Channel −3dB Bandwidth or
Minimum Frequency Response
(Figure 10)
Maximum Feedthrough On Loss
Condition
V
IN
=
0 dBm
V
IN
centered between V
CC
and GND
(Figure 7)
V
IN
=
0 dBm @ 100 kHz to 50 MHz
V
IN
centered between V
CC
and GND
(Figure 7)
f = 100 kHz; V
IS
=
1 V RMS
V
IN
centered between V
CC
and GND
(Figure 7)
V
IN =
V
CC to
GND, F
IS
= 20 kHz
t
r
= t
f
= 3 ns
R
IS
= 0
W,
C
L
= 1000 pF
Q = C
L
*
DV
OUT,
(Figure 8)
Off−Channel Isolation
(Figure 10)
Charge Injection Select Input to
Common I/O
(Figure 15)
Total Harmonic Distortion
THD + Noise
(Figure 14)
F
IS
= 20 Hz to 100 kHz, R
L
= Rgen = 600
W,
C
L
= 50 pF
V
IS
= 5.0 V
PP
sine wave
ORDERING INFORMATION
Device
NLAST4599DFT2G
NLAST4599DTT1G
NLVAST4599DTT1G*
Package
SC−88/SC−70/SOT−363
(Pb−Free)
TSOP−6
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLVAST Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and
PPAP Capable.
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4
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Symbol
BW
V
ONL
V
ISO
Q
THD
ADDITIONAL APPLICATION CHARACTERISTICS
(Voltages Referenced to GND Unless Noted)
V
CC
V
3.0
4.5
5.5
3.0
4.5
5.5
3.0
4.5
5.5
3.0
5.5
Typical
25°C
170
200
200
−2
−2
−2
−93
−93
−93
1.5
3.0
Unit
MHz
dB
dB
pC
%
5.5
0.1
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
NLAST4599
DUT
V
CC
0.1
mF
300
W
Output
V
OUT
35 pF
Input
V
CC
GND
t
BMM
90%
Output
90% of V
OH
Switch Select Pin
GND
Figure 4. t
BBM
(Time Break−Before−Make)
V
CC
DUT
V
CC
0.1
mF
Open
Output
V
OUT
300
W
35 pF
Output
V
OL
t
ON
t
OFF
Input
0V
V
OH
90%
90%
50%
50%
Input
Figure 5. t
ON
/t
OFF
V
CC
DUT
Output
Open
300
W
V
OUT
35 pF
Input
V
CC
50%
0V
V
OH
Output
V
OL
10%
t
OFF
t
ON
10%
50%
Input
Figure 6. t
ON
/t
OFF
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