INTEGRATED CIRCUITS
DATA SHEET
74AHC1GU04
Inverter
Product specification
File under Integrated Circuits, IC06
1999 May 19
Philips Semiconductors
Product specification
Inverter
FEATURES
•
Symmetrical output impedance
•
High noise immunity
•
ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000 V;
MM EIA/JESD22-A115-A
exceeds 200 V
•
Low power dissipation
•
Balanced propagation delays
•
Very small 5-pin package
•
Output capability: standard.
DESCRIPTION
The 74AHC1GU04 is a high-speed
Si-gate CMOS device.
The 74AHC1GU04 provides the
inverting single stage function.
FUNCTION TABLE
See note 1.
INPUT
inA
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
ORDERING INFORMATION
PACKAGES
TYPE NUMBER
74AHC1GU04GW
TEMPERATURE
RANGE
−40
to +85
°C
PINS
5
PACKAGE
SC-88A
MATERIAL
plastic
OUTPUT
outY
H
L
Notes
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
PARAMETER
propagation delay
inA to outY
input capacitance
power dissipation
capacitance
notes 1 and 2
74AHC1GU04
CONDITIONS
TYPICAL UNIT
ns
pF
pF
C
L
= 15 pF; V
CC
= 5 V 2.6
3
14
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+ (C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
2. The condition is V
I
= GND to V
CC
.
PINNING
PIN
1
2
3
4
5
n.c.
inA
GND
outY
V
CC
SYMBOL
DESCRIPTION
not connected
data input
ground (0 V)
data output
DC supply voltage
CODE
SOT353
MARKING
AD
1999 May 19
2
Philips Semiconductors
Product specification
Inverter
74AHC1GU04
handbook, halfpage
n.c. 1
inA 2
GND
3
MNA042
5 VCC
handbook, halfpage
U04
4
outY
2
inA
outY
4
MNA043
Fig.1 Pin configuration.
Fig.2 Logic symbol.
handbook, halfpage
2
1
MNA044
4
handbook, halfpage
inA
outY
MNA045
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
1999 May 19
3
Philips Semiconductors
Product specification
Inverter
RECOMMENDED OPERATING CONDITIONS
74AHC1GU04
74AHC1G
SYMBOL
V
CC
V
I
V
O
T
amb
t
r
, t
f
(∆t/∆f)
PARAMETER
DC supply voltage
input voltage
output voltage
operating ambient
temperature range
see DC and AC
characteristics per device
CONDITIONS
MIN.
2.0
0
0
−40
−
−
−
−
+25
−
−
TYP.
5.0
MAX.
5.5
5.5
V
CC
+85
100
20
V
V
V
°C
ns/V
UNIT
input rise and fall times except V
CC
= 3.3 V
±0.3
V
for Schmitt-trigger inputs
V
CC
= 5 V
±0.5
V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55
°C
the value of P
D
derates linearly with 2.5 mW/K.
PARAMETER
DC supply voltage
input voltage range
DC input diode current
DC output diode current
DC V
CC
or GND current
storage temperature
power dissipation per package
V
I
<
−0.5
V
O
<
−0.5
or V
O
> V
CC
+ 0.5 V; note 1
CONDITIONS
MIN.
−0.5
−0.5
−
−
−
−
−65
temperature range:
−40
to +85
°C;
note 2
−
MAX.
+7.0
+7.0
−20
±20
±25
±75
+150
200
UNIT
V
V
mA
mA
mA
mA
°C
mW
DC output source or sink current
−0.5
V < V
O
< V
CC
+ 0.5 V
1999 May 19
4
Philips Semiconductors
Product specification
Inverter
DC CHARACTERISTICS
Over recommended operating conditions; voltage are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
OTHER
V
IH
HIGH-level input
voltage
V
CC
(V)
2.0
3.0
5.5
V
IL
LOW-level input voltage
2.0
3.0
5.5
V
OH
HIGH-level output
voltage; all outputs
V
I
= V
IH
or V
IL
;
I
O
=
−50 µA
V
I
= V
IH
or V
IL
;
I
O
=
−4.0
mA
V
I
= V
IH
or V
IL
;
I
O
=
−8.0
mA
V
OL
LOW-level output
voltage; all outputs
V
I
= V
IH
or V
IL
;
I
O
= 50
µA
V
I
= V
IH
or V
IL
;
I
O
= 4 mA
V
I
= V
IH
or V
IL
;
I
O
= 8 mA
I
I
I
CC
C
I
input leakage current
quiescent supply
current
input capacitance
V
I
= V
CC
or GND
2.0
3.0
4.5
HIGH-level output
voltage
3.0
4.5
2.0
3.0
4.5
LOW-level output
voltage
3.0
4.5
5.5
MIN.
1.7
2.4
4.4
−
−
−
1.9
2.9
4.4
2.58
3.94
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2.0
3.0
4.5
−
−
0
0
0
−
−
−
−
3
+25
TYP.
MAX.
−
−
−
0.3
0.6
1.1
−
−
−
−
−
0.1
0.1
0.1
0.36
0.36
0.1
1.0
−
T
amb
(°C)
74AHC1GU04
−40
to +85
MIN.
1.7
2.4
4.4
−
−
−
1.9
2.9
4.4
2.48
3.8
−
−
−
−
−
−
−
−
MAX.
−
−
−
0.3
0.6
1.1
−
−
−
−
−
0.1
0.1
0.1
0.44
0.44
1.0
10
10
UNIT
V
V
V
V
V
V
µA
µA
pF
V
I
= V
CC
or GND; 5.5
I
O
= 0
1999 May 19
5
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