| 参数名称 | 属性值 |
| Brand Name | Nexperia |
| 零件包装代码 | TO-236 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 |
| 针数 | 3 |
| 制造商包装代码 | SOT23 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| Factory Lead Time | 4 weeks |
| 其他特性 | LOW NOISE |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 45 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 420 |
| JEDEC-95代码 | TO-236AB |
| JESD-30 代码 | R-PDSO-G3 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | PNP |
| 表面贴装 | YES |
| 端子面层 | Tin (Sn) |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 30 |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 100 MHz |
| Base Number Matches | 1 |
| BC860C,215 | BC860B,235 | BC859C,215 | BC860B,215 | BC859B,215 | BC859C,235 | |
|---|---|---|---|---|---|---|
| 描述 | BC859; BC860 - PNP general purpose transistors TO-236 3-Pin | TRANS PNP 30V 0.1A SOT23 | TRANS PNP 45V 0.1A SOT23 | 额定功率：250mW 集电极电流Ic：100mA 集射极击穿电压Vce：30V 晶体管类型：PNP PNP 30V 0.1A | BC859; BC860 - PNP general purpose transistors TO-236 3-Pin | |
| Brand Name | Nexperia | Nexperia | Nexperia | Nexperia | Nexperia | Nexperia |
| 零件包装代码 | TO-236 | TO-236 | TO-236 | TO-236 | TO-236 | TO-236 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| 针数 | 3 | 3 | 3 | 3 | 3 | 3 |
| 制造商包装代码 | SOT23 | SOT23 | SOT23 | SOT23 | SOT23 | SOT23 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 45 V | 45 V | 30 V | 45 V | 30 V | 30 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 420 | 220 | 420 | 220 | 220 | 420 |
| JEDEC-95代码 | TO-236AB | TO-236AB | TO-236AB | TO-236AB | TO-236AB | TO-236AB |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609代码 | e3 | e3 | e3 | e3 | e3 | e3 |
| 湿度敏感等级 | 1 | 1 | 1 | 1 | 1 | 1 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 端子面层 | Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz |
| 峰值回流温度（摄氏度） | 260 | 260 | - | - | 260 | 260 |
| 处于峰值回流温度下的最长时间 | 30 | 30 | - | - | 30 | 30 |
| Base Number Matches | 1 | 1 | 1 | 1 | - | - |
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