BC859; BC860 - PNP general purpose transistors TO-236 3-Pin
参数名称 | 属性值 |
Brand Name | Nexperia |
零件包装代码 | TO-236 |
包装说明 | SMALL OUTLINE, R-PDSO-G3 |
针数 | 3 |
制造商包装代码 | SOT23 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
Factory Lead Time | 4 weeks |
其他特性 | LOW NOISE |
最大集电极电流 (IC) | 0.1 A |
集电极-发射极最大电压 | 45 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 220 |
JEDEC-95代码 | TO-236AB |
JESD-30 代码 | R-PDSO-G3 |
JESD-609代码 | e3 |
湿度敏感等级 | 1 |
元件数量 | 1 |
端子数量 | 3 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 |
极性/信道类型 | PNP |
表面贴装 | YES |
端子面层 | Tin (Sn) |
端子形式 | GULL WING |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | 30 |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 100 MHz |
Base Number Matches | 1 |
BC860B,235 | BC859C,215 | BC860B,215 | BC859B,215 | BC860C,215 | BC859C,235 | |
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描述 | BC859; BC860 - PNP general purpose transistors TO-236 3-Pin | TRANS PNP 30V 0.1A SOT23 | TRANS PNP 45V 0.1A SOT23 | 额定功率:250mW 集电极电流Ic:100mA 集射极击穿电压Vce:30V 晶体管类型:PNP PNP 30V 0.1A | BC859; BC860 - PNP general purpose transistors TO-236 3-Pin | |
Brand Name | Nexperia | Nexperia | Nexperia | Nexperia | Nexperia | Nexperia |
零件包装代码 | TO-236 | TO-236 | TO-236 | TO-236 | TO-236 | TO-236 |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
针数 | 3 | 3 | 3 | 3 | 3 | 3 |
制造商包装代码 | SOT23 | SOT23 | SOT23 | SOT23 | SOT23 | SOT23 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
集电极-发射极最大电压 | 45 V | 30 V | 45 V | 30 V | 45 V | 30 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 220 | 420 | 220 | 220 | 420 | 420 |
JEDEC-95代码 | TO-236AB | TO-236AB | TO-236AB | TO-236AB | TO-236AB | TO-236AB |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
JESD-609代码 | e3 | e3 | e3 | e3 | e3 | e3 |
湿度敏感等级 | 1 | 1 | 1 | 1 | 1 | 1 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP |
表面贴装 | YES | YES | YES | YES | YES | YES |
端子面层 | Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz |
峰值回流温度(摄氏度) | 260 | - | - | 260 | 260 | 260 |
处于峰值回流温度下的最长时间 | 30 | - | - | 30 | 30 | 30 |
Base Number Matches | 1 | 1 | 1 | - | 1 | - |
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