Thyristors
EV Series 1.5 Amp Sensitive SCRs
Sx02xS Series
Description
RoHS
New 1.5 Amp sensitive gate SCR series offers high static
dv/dt with low turn off time (tq) through small die planar
construction design. All SCR’s junctions are glass-
passivated to ensure long term reliability and parametric
stability.
Features
• Surge
capability > 15Amps
• Blocking voltage
(V
DRM
/ V
RRM
)
capability — up to 600V
Main Features
Symbol
I
T(RMS)
V
DRM
/ V
RRM
I
GT
Value
1.5
400 or 600
200
Unit
A
V
µA
• Sensitive gate for direct
microprocessor interface
• Thru hole and surface
mount packages
• RoHS compliant and
Halogen-Free
• High dv/dt noise immunity
• Improved turn-off
time (tq) < 35 μsec.
Schematic Symbol
A
Applications
The Sx02xS EV series is specifically designed for solenoid
drive often seen in GFCI and similar safety cut-off devices.
Absolute Maximum Ratings
Symbol
I
T(RMS)
RMS on-state current
(full sine wave)
Parameter
TO-92
SOT-89
SOT-223
TO-92
I
T(AV)
Average on-state current
SOT-89
SOT-223
I
TSM
Non repetitive surge peak on-state current
(Single cycle, T
J
initial = 25°C)
TO-92
SOT-89
SOT-223
t
p
= 10 ms
t
p
= 8.3 ms
TO-92
SOT-89
SOT-223
t
p
= 10 μs
T
C
= 65°C
T
C
= 80°C
T
L
= 95°C
T
C
= 65°C
T
C
= 80°C
T
C
= 95°C
F = 50 Hz
F = 60 Hz
F = 50 Hz
F = 60 Hz
T
J
= 125°C
T
J
= 125°C
T
J
= 125°C
12.5
15.0
0.78
0.93
50
1.0
0.1
-40 to 150
-40 to 125
A
0.95
A
1.5
A
Value
Unit
G
K
I
2
t
I
2
t Value for fusing
A
2
s
di/dt
I
GM
P
G(AV)
T
stg
T
J
Critical rate of rise of on-state current IG = 10mA
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
A/μs
A
W
°C
°C
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/08/18
Thyristors
EV Series 1.5 Amp Sensitive SCRs
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
I
GT
V
GT
V
GRM
I
H
(dv/dt)s
Description
DC Gate Trigger Current
DC Gate Trigger Voltage
Peak Reverse Gate Voltage
Holding Current
Critical Rate-of-Rise of
Off-State Voltage
Turn-Off Time
Turn-On Time
Test Conditions
V
D
= 12V; R
L
= 60
Ω
V
D
= 12V; R
L
= 60
Ω
I
RG
= 10μA
R
GK
= 1 kΩ
T
J
= 125°C
V
D
= V
DRM
/ V
RRM
Exponential Waveform
R
GK
= 1 kΩ
T
J
= 125°C @ 600 V
R
GK
= 1 kΩ
I
G
= 10mA
PW = 15μsec
I
T
= 3.0A (pk)
Sx02xS
Min
15
—
5
—
Max
200
0.8
—
5
Min
15
—
5
—
Sx02xS1
Max
100
0.8
—
3
Unit
µA
V
V
mA
25
—
25
—
V/μs
t
q
t
gt
—
—
35
3
—
—
35
3
μs
μs
Static Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
V
TM
Description
Peak On-State Voltage
Test Conditions
I
TM
= 3.0A (pk)
T
J
= 25°C @ V
D
= V
DRM
R
GK
= 1 kΩ
T
J
= 125°C @ V
D
= V
DRM
R
GK
= 1 kΩ
Value
Min
—
—
—
Max
1.70
5
500
Unit
V
μA
μA
I
DRM
Off-State Current, Peak Repetitive
Thermal Resistances
Symbol
R
θ(J-C)
Parameter
TO-92
Junction to case (AC)
T
Value
50
35
25
160
90
60
= 1.5A
(RMS)1
SOT-89
SOT-223
TO-92
Unit
°C/W
R
θ(J-A)
1
Junction to ambient
I
T
= 1.5A
(RMS)1
SOT-89
SOT-223
°C/W
60Hz AC resistive load condition, 100% conduction.
Additional Information
Datasheet
Resources
Samples
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/08/18
Thyristors
EV Series 1.5 Amp Sensitive SCRs
Figure 1: Normalized DC Gate Trigger Current
vs. Junction Temperature
2.5
Figure 2: Normalized DC Holding Current
vs. Junction Temperature
2.0
Normalized Gate: Trigger Current
I
GT
@ T
j
/ I
GT
@ 25ºC
Normalized Holding Current
(I
H
@ T
J
/ I
H
@25∞C)
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
-40
-25
-10
+5
+20
+35
+50
+65
+80
+95
+110
+125
0.0
-40
-25
-10
+5
+20
+35
+50
+65
+80
+95
+110
+125
Junction Temperature (T
J
) °C
Junction Temperature (T
J
) °C
Figure 3: Normalized DC Gate Trigger Voltage
vs. Junction Temperature
1.5
Figure 4: On-State Current vs. On-State
Voltage (Typical)
Instantaneous On-state Current (IT) – Amps
10
8
6
4
2
0
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Instantaneous On-state Voltage (VT) – Volts
Normalized Gate: Trigger Voltage
(V
GT
@ T
j
/ V
GT
@ 25ºC)
1.0
0.5
-40
-25
-10
+5
+20
+35
+50
+65
+80
+95
+110
+125
Junction Temperature (T
J
) °C
Figure 5: Power Dissipation (Typical)
vs. RMS On-State Current
1.5
Figure 6: Maximum Allowable Case Temperature
vs. On-State Current
Max Allowable Case Temperature, T
C
(Celsius)
130
120
SOT-223
110
100
TO-92
90
80
SOT-89
70
60
50
0.0
0.5
1.0
1.5
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
o
CASE TEMPERATURE: Measured as
shown on dimensional drawings
Average Power Dissipation, P
D
(Watts)
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
o
1.0
0.5
0.0
0.0
RMS On-state Current [I
T(RMS)
] (Amps)
0.5
1.0
1.5
RMS On-state Current [I
T (RMS)
] (Amps)
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/08/18
Thyristors
EV Series 1.5 Amp Sensitive SCRs
Figure 7: Typical DC Gate Trigger Current with R
GK
vs.
Junction Temperature for Sx02xS
100
Figure 8: Typical DC Holding Current with R
GK
vs.
Junction Temperature for Sx02xS
100
Trigger Current IGT (mA)
Holding Current IH (mA)
10
R
GK
=10
R
GK
=100
R
GK
=470
R
GK
=1K
R
GK
=10
10
R
GK
=100
R
GK
=470
1
0.1
No R
GK
0.01
1
R
GK
=1K
No R
GK
0.001
0.1
-40
-15
10
35
60
85
110
135
-40
-15
10
35
60
85
110
135
Junction Temperature (T
J
) -- (°C)
Junction Temperature (T
J
) -- (°C)
Figure 9: Typical Static dv/dt with R
GK
vs. Junction
Temperature for Sx02xS
10000
Figure 10: Typical turn off time with R
GK
vs. Junction
Temperature for Sx02xS
32
R
GK
=10
Turn off time Tq (µs)
28
24
R
GK
=1K
Static dv/dt (V/ s)
1000
R
GK
=220
R
GK
=470
20
16
12
8
4
R
GK
=470
R
GK
=100
R
GK
=10
100
R
GK
=1K
10
0
25
45
65
85
105
125
-40
-15
10
35
60
85
110
135
Junction Temperature (T
J
) -- (°C)
Junction Temperature (T
J
) -- (°C)
Figure 11: Surge Peak On-State Current vs. Number of Cycles
20
Peak Surge (Non-repetitive) On-State
Current (I
TSM
) – Amps.
15
12
10
9
8
7
6
5
4
3
2
1.5
AD
evic
es
Supply Frequency: 60Hz Sinusoidal
Load: Resistive
RMS On-State Current [I
T(RMS)
]: Max Rated Value at
Specific Case Temperature
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state rated value.
1
1
2
3
4
5 6 7 8 9 10
20
30
40
60 80 100
200
300 400 600
1000
Surge Current Duration – Full Cycle
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/08/18
Thyristors
EV Series 1.5 Amp Sensitive SCRs
Soldering Parameters
Reflow Condition
- Temperature Min (T
s(min)
)
Pre Heat
- Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
Average ramp up rate (Liquidus Temp)
(T
L
) to peak
T
S(max)
to T
L
- Ramp-up Rate
Reflow
- Temperature (T
L
) (Liquidus)
- Time (min to max) (t
s
)
Pb – Free assembly
T
P
Temperature
t
P
Ramp-up
150°C
200°C
60 – 180 secs
5°C/second max
5°C/second max
217°C
60 – 150 seconds
260
+0/-5
T
L
T
S(max)
t
L
Preheat
Ramp-do
Ramp-down
T
S(min)
t
S
time to peak temperature
25
Time
Peak Temperature (T
P
)
Time within 5°C of actual peak
Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
°C
20 – 40 seconds
5°C/second max
8 minutes Max.
280°C
Physical Specifications
Terminal Finish
Body Material
Lead Material
100% Matte Tin-plated.
UL recognized epoxy meeting flammability
rating V-0.
Copper Alloy
Environmental Specifications
Test
AC Blocking
Temperature Cycling
Temperature/
Humidity
Specifications and Conditions
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 125°C for 1008 hours
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell-time
EIA / JEDEC, JESD22-A101
1008 hours; 160V - DC: 85°C; 85%
rel humidity
MIL-STD-750, M-1031,
1008 hours; 150°C
1008 hours; -40°C
MIL-STD-750 Method 2031
ANSI/J-STD-002, category 3, Test A
MIL-STD-750, M-2036 Cond E
Design Considerations
Careful selection of the correct component for the
application’s operating parameters and environment will
go a long way toward extending the operating life of the
Thyristor. Good design practice should limit the maximum
continuous current through the main terminals to 75% of
the component rating. Other ways to ensure long life for
a power discrete semiconductor are proper heat sinking
and selection of voltage ratings for worst case conditions.
Overheating, overvoltage (including dv/dt), and surge
currents are the main killers of semiconductors. Correct
mounting, soldering, and forming of the leads also help
protect against component damage.
High Temp Storage
Low-Temp Storage
Resistance to
Solder Heat
Solderability
Lead Bend
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/08/18
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
