ZVN4525E6
250V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
250V
8.5
Max R
DS(on)
@ V
GS
= 10V
Max I
D
T
A
= +25°C
°
230mA
Features and Benefits
•
•
•
•
•
•
•
•
High voltage
Low on-resistance
Fast switching speed
Low
threshold
Low gate drive
Complementary P-channel Type ZVP4525E6
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
NEW PRODUCT
Description and Applications
This 250V enhancement mode N-channel MOSFET provides users
with a competitive specification. It offers efficient power handling
capability, high impedance and is free from thermal runaway and
thermally induced secondary breakdowns. Applications benefiting
from this device include a variety of Telecom and general high-
voltage circuits.
SOT89 and SOT223 versions are also available.
•
•
•
•
•
Earth Recall and Dialing Switches
Electronic Hook Switches
High Voltage Power MOSFET Drivers
Telecom Call Routers
Solid State Relays
SOT26
Mechanical Data
•
•
•
•
•
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
Top View
Pinout Top-view
Device symbol
Ordering Information
(Note 4)
Part Number
ZVN4525E6TA
ZVN4525E6TC
Notes:
Reel Size (inch)
7
13
Tape Width (mm)
8
8
Quantity Per Reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SOT26
N52
N52 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2015
Code
C
Month
Code
Jan
1
2016
D
Feb
2
2017
E
Mar
3
2018
F
Apr
4
YM
2019
G
May
5
2020
H
Jun
6
2021
I
Jul
7
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
March 2015
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
1 of 7
www.diodes.com
© Diodes Incorporated
ZVN4525E6
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DSS
V
GS
T
A
=+25° (Note 4)
C
T
A
=+70° (Note 4)
C
I
D
I
DM
I
S
I
SM
Value
250
±40
230
183
1.44
1.1
1.44
Unit
V
V
mA
A
A
A
NEW PRODUCT
Continuous Drain Current
V
GS
= 10V
Pulsed Drain Current (Note 6)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation at T
A
=+25° (Note 4)
C
Linear Derating Factor
Junction to Ambient (Note 4)
Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θ
JA
R
θ
JA
T
J
, T
STG
Value
1.1
8.8
113
65
-55 to +150
Unit
W
mW/°
C
°
C/W
°
C/W
°
C
4.
For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
5.
For a device surface mounted on FR4 PCB measured at t 5 secs.
6.
Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to voltage spacing between conductors.
Thermal Characteristics
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
≦
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZVN4525E6
Electrical Characteristics
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (Note 7)
Forward Transconductance (Note 9)
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
(Notes 8 & 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Reverse Recovery Time (Note 9)
Reverse Recovery Charge (Note 9)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
fs
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
rr
Q
rr
t
d(on)
t
r
t
d(off)
t
f
Min
250
-
Typ
285
35
±1
1.4
5.6
5.9
6.4
0.475
Max
-
500
100
1.8
8.5
9.0
9.5
-
0.97
-
-
-
3.65
0.28
0.7
260
48
-
-
-
-
Unit
V
½A
nA
V
Test Condition
I
D
= 1mA, V
GS
= 0V
V
DS
= 250V, V
GS
= 0V
V
GS
=
±40V,
V
DS
= 0V
I
D
= 1mA, V
DS
= V
GS
V
GS
= 10V, I
D
= 500mA
V
GS
= 4.5V, I
D
= 360mA
V
GS
= 2.4V, I
D
= 20mA
V
DS
= 10V, I
D
= 0.3A
T
J
=+25°
, I
S
= 360mA, V
GS
= 0V
C
V
DS
= 25 V, V
GS
= 0V
f = 1MHz
V
GS
= 10V, V
DS
= 25V
I
D
= 360mA(refer to test circuit)
T
J
=+25° IF=360A,
C,
di/dt= 100A/µs
V
DD
= 30V, V
GS
= 10V
I
D
= 360mA, R
G
= 50
(refer to test circuit)
NEW PRODUCT
0.8
-
0.3
S
V
pF
pF
pF
nC
nC
nC
ns
nC
ns
ns
ns
ns
-
-
-
-
-
-
-
-
-
-
-
-
72
11
3.6
2.6
0.2
0.5
186
34
1.25
1.7
11.40
3.5
7. Measured under pulsed conditions. Width=300µs. Duty cycle
≤
2%.
8. Switching characteristics are independent of operating junction temperature.
9. For design aid only, not subject to production testing.
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
3 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZVN4525E6
Typical Characteristics
NEW PRODUCT
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
4 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZVN4525E6
Typical Characteristics
(continued)
NEW PRODUCT
Test Circuits
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
5 of 7
www.diodes.com
March 2015
© Diodes Incorporated
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