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FM25040B-GTR

产品描述存储器接口类型:SPI 存储器容量:4Kb (512 x 8) 工作电压:4.5V ~ 5.5V 存储器类型:Non-Volatile FM25040B Series 4 kb (512 x 8) Serial 5 V F-RAM Memory - SOIC-8
产品类别存储    存储   
文件大小675KB,共22页
制造商Cypress(赛普拉斯)
标准
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FM25040B-GTR概述

存储器接口类型:SPI 存储器容量:4Kb (512 x 8) 工作电压:4.5V ~ 5.5V 存储器类型:Non-Volatile FM25040B Series 4 kb (512 x 8) Serial 5 V F-RAM Memory - SOIC-8

FM25040B-GTR规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Cypress(赛普拉斯)
零件包装代码SOIC
包装说明SOP, SOP8,.25
针数8
Reach Compliance Codecompliant
ECCN代码EAR99
JESD-30 代码R-PDSO-G8
JESD-609代码e4
长度4.9 mm
内存密度4096 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
湿度敏感等级3
功能数量1
端子数量8
字数512 words
字数代码512
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织512X8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
电源5 V
认证状态Not Qualified
座面最大高度1.75 mm
最大待机电流0.00001 A
最大压摆率0.004 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
宽度3.9 mm
Base Number Matches1

文档预览

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FM25040B
4-Kbit (512 × 8) Serial (SPI) F-RAM
4-Kbit (512 × 8) Serial (SPI) F-RAM
Features
Functional Description
The FM25040B is a 4-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
Unlike serial flash and EEPROM, the FM25040B performs write
operations at bus speed. No write delays are incurred. Data is
written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The FM25040B is capable of supporting
10
14
read/write cycles, or 100 million times more write cycles
than EEPROM.
These capabilities make the FM25040B ideal for nonvolatile
memory applications requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The FM25040B provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
FM25040B uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
specifications are guaranteed over an industrial temperature
range of –40
C
to +85
C.
For a complete list of related documentation, click
here.
4-Kbit ferroelectric random access memory (F-RAM) logically
organized as 512 × 8
14
High-endurance 100 trillion (10 ) read/writes
151-year data retention (See the
Data Retention and
Endurance
table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
250
A
active current at 1 MHz
4
A
(typ) standby current
Voltage operation: V
DD
= 4.5 V to 5.5 V
Industrial temperature: –40
C
to +85
C
8-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
WP
CS
HOLD
SCK
Instruction Decoder
Clock Generator
Control Logic
Write Protect
512 x 8
F-RAM Array
Instruction Register
Address Register
Counter
SI
9
8
Data
I/
O Register
2
Nonvolatile Status
Register
SO
Errata:
The Write Enable Latch (WEL) bit in the Status Register of FM25040B part doesn’t clear after executing the memory write (WRITE) operation at memory location(s)
from 0x100 to 0x1FF. For more information, see
Errata on page 19.
Details include errata trigger conditions, scope of impact, available workarounds, and silicon revision
applicability.
Cypress Semiconductor Corporation
Document Number: 001-86145 Rev. *J
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised April 19, 2017

 
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