AO3407
SOT-23 Plastic-Encapsulate MOSFETS
30V
P-Channel Advanced Power
MOSFET
SOT-23
I
D
M
ax
- 4.1A
1. GATE
2. SOURCE
3. DRAIN
1
2
3
V
(BR)DSS
-30V
R
DS(on)
Typ
43mΩ
@
-10V
66mΩ
@
-4.5V
•
Low R
@V
=-10V
•
-5V Logic Level Control
DS(on)
GS
FEATURE
APPLICATION
MARKING
D
•
•
•
•
Load Switch
Switching circuits
High-speed line driver
Power Management Functions
Equivalent circuit
A79T
G
S
PACKAGE SPECIFICATIONS
Package Reel Size
SOT-23
7'
Reel DIA.
(mm)
178
Q'TY/Reel
(pcs)
3000
Box Size
(mm)
203×203×195
QTY/Box
(pcs)
45000
Carton Size Q'TY/Carton
(mm)
(pcs)
438×438×220
180000
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
Maximum Power Dissipation
Junction
1) ,2)
Symbol
Limit
Unit
V
DS
V
GS
T
A
= 25
o
C
T = 70 C
A
o
-30
±20
-4.1
-3.2
-16.4
1.2
0.9
150
-50 to 150
80
o
V
A
I
D
I
DM
A
W
o
o
T
A
= 25
o
C
T = 70
o
C
A
P
D
T
J
T
stg
C
C
Thermal Resistance
from Junction-to-Ambient (t≤5s)
Notes
1)
Pulse width limited by maximum junction temperature.
2)
Surface Mounted on FR4 Board, t
v
5 sec.
The above data are for reference only.
DN:T200218A0
R
θJA
C/W
http://www.microdiode.com
Rev:2020A0
Page :1
AO3407
MOSFET ELECTRICAL CHARACTERISTICS
T =25
℃
unless otherwise specified
a
Parameter
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(th)
Test Condition
Min
Typ
Max
Units
V
Static
Drain-source breakdown voltage
Gate-body leakage
Zero gate voltage drain current
Gate-threshold voltage (note 1)
V
GS
= 0V, I
D
=-250µA
-30
±100
-1
-100
-1.2
-1.6
43
66
5.5
8.2
-2.5
55
80
V
GS
=±20V,
V
DS
=0V
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
nA
µA
µA
V
V
DS
=V
GS
, I
D
=-250μA
V
GS
=-10V, I
D
=-4A
V
GS
=-4.5V, I
D
=-3A
V
DS
=-5V, I
D
=-4A
Drain-source
on-resistance (note 1)
Forward transconductance (note 1)
Dynamic characteristics (note 2)
R
DS(on)
g
FS
mΩ
S
Total Gate C harge
Gate-Source Charge
Gate-Drain Charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching characteristics
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=-15V,I
D
=-4A,V
GS
=-10V
0.8
2.7
493
nC
V
DS
=-15V,V
GS
=0V, f=1MHz
65
44
7.2
pF
Turn-on delay time (note 2)
Rise time (note 2)
Turn-off delay time (note 2)
Fall time (note 2)
Drain-source body diode characteristics
V
DD
=-15V, V
GS
=-10V,
I
D
=-1A,R
G
=3.3Ω
4.8
25
8.5
-2
ns
Source drain current(Body Diode)
Body diode forward voltage (note 1)
I
SD
V
SD
A
V
I
SD
=-4A, V
GS
= 0V
-0.88
-1.2
Notes :
1.
Pulse Test : Pulse Width≤
300µs,
Duty Cycle≤ 2 %.
2.
These parameters have no way to verify.
http://www.microdiode.com
Rev:2020A0
Page :2
AO3407
Typical Characteristics
-VGS(TH), Gate -Source Voltage (V)
-V
DS
, Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
-I
D
, Drain-Source Current (A)
Tj - Junction Temperature (°C)
Fig2.
Normalized Threshold Voltage Vs. Temperature
-ID, Drain-Source Current (A)
Rdson, On -Resistance
(mΩ))
-V
GS
, Gate -Source Voltage (V)
Fig3.
Typical Transfer Characteristics
-ID , Drain Current (A)
Fig4.
On-Resistance vs. Drain Current and Gate
-ISD, Reverse Drain Current (A)
-V
SD
, Source-Drain Voltage (V)
Fig5.
Typical Source-Drain Diode Forward Voltage
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-ID - Drain Current (A)
-V
DS
, Drain -Source Voltage (V)
Fig6.
Maximum Safe Operating Area
Rev:2019A0
Page :3
AO3407
Typical Characteristics
-VGS, Gate-Source Voltage (V)
-V
DS
, Drain-Source Voltage (V)
Fig7.
Typical Capacitance Vs. Drain-Source Voltage
C, Capacitance (pF)
Qg, Total Gate Charge (nC)
Fig8.
Typical Gate Charge Vs. Gate-Source Voltage
ZqJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Fig9.
Normalized Maximum Transient Thermal Impedance
Fig10.
Switching Time Test Circuit and waveforms
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Rev:2020A0
Page :4
AO3407
Outlitne Drawing
SOT-23 Package Outline Dimensions
Symbol
A
A1
b
c
D
E
E1
e
L
L1
θ
Dimensions In Millimeters
Min
Typ
Max
1.00
1.40
0.10
0.35
0.50
0.20
0.10
2.70
2.90
3.10
1.40
1.60
2.4
2.80
1.90
0.10
0.30
0.4
0°
10°
E1
E
L1
e
0.037
0.95
Suggested Pad Layout
0.037
0.95
L
Note:
1.
Controlling
dimension:in/millimeters. 2.General
tolerance: ±0.05mm.
3.The pad layout is for reference purposes only.
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Important Notice and Disclaimer
Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its
products and specifications at any time without notice. Customers should obtain and confirm the
latest product information and specifications before final design,purchase or use.
Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, not does Microdiode Electronics
(Jiangsu) assume any liability for application assistance or customer product design. Microdiode
Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased
or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of
Microdiode Electronics (Jiangsu).
Microdiode Electronics (Jiangsu) products are not authorized for use as critical components
in life support devices or systems without express written approval of Microdiode Electronics
(Jiangsu).
http://www.microdiode.com
Rev:2020A0
Page :5
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