KIA
SEMICONDUCTORS
24A，500V
N-CHANNEL MOSFET
24N50H
1.Description
This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced
technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices
are well suited for high efficiency switched mode power supplies, active power factor correction based on
half bridge topology.
2.
Features
n
n
n
n
n
n
R
DS(ON)
=0.16Ω@V
GS
=10 V
Low gate charge ( typical 90nC)
High ruggedness
Fast switching
100%avalanche tested
Improved dv/dt capability
3.
Pin configuration
Pin
1
2
3
Function
Gate
Drain
Source
1 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
24A，500V
N-CHANNEL MOSFET
24N50H
4.
Absolute maximum ratings
(T
C
= 25 ºC , unless otherwise specified)
Parameter
Drain-source voltage
Gate-source voltage
Drain currenet continuous
Drain current pulsed (note1)
Avalanche energy
Repetitive (note1)
Single pulse (note2)
T
c
=25°C
T
c
=100°C
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AR
E
AS
dv/dt
P
D
T
J
，
T
STG
T
L
Ratings
500
±30
24
15
96
29
1150
4.5
290
2.33
-55~+150
300
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/°C
°C
°C
Peak diode recovery dv/dt (note3)
Total power dissipation
T
c
=25°C
Derate above 25°C
Operating and storage temperature range
Maximum lead temperature for soldering purposes,
1/8”from case for 5 seconds
5.
Thermal characteristics
Parameter
Thermal resistance junction-ambient
Thermal resistance, case-to-sink typ.
Thermal resistance junction-case
Symbol
R
thJA
R
thCS
R
thJC
Typ
-
0.24
-
Max
40
-
0.43
°C/W
Units
2 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
24A，500V
N-CHANNEL MOSFET
24N50H
6.
Electrical characteristics
(T
J
=25°C,unless otherwise noted)
Parameter
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
current
Forward
Reverse
Breakdown voltage temperature
coefficient
On characteristics
Gate threshold voltage
Static drain-source on-resistance
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching characteristics
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source diode characteristics
Drain-source diode forward voltage
Continuous drain-source current
Pulsed drain-source current
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
I
DSS
I
GSS
△BV
DSS
/△T
J
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
SD
I
S
I
SM
t
RR
Q
RR
Test Conditions
V
GS
=0V,I
D
=250μA
V
DS
=500V,V
GS
=0V
V
DS
=400V,T
C
=125℃
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
I
D
=250μA,
referenced to 25℃
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V,I
D
=12A
Min
500
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
0.5
-
0.16
3500
520
55
100
250
200
150
90
22
45
-
-
-
400
4.3
Max
-
1
10
100
-100
-
4.5
0.2
-
-
-
-
-
-
-
-
-
-
1.5
24
96
-
-
Units
V
μA
μA
nA
nA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
DS
=25V,V
GS
=0V,
f=1MH
Z
V
DD
=250V,I
D
=24A,
R
G
=25Ω (note4,5)
V
DS
=400V, I
D
=24A,
V
GS
=10V (note4,5)
V
GS
=0V,I
SD
=24A
V
GS
=0V,I
S
=24A,
dl
F
/dt=100A/μs (note4)
Note：1. Repetitive rating : pulse width limited by maximum junction temperature
2. L= 3.4mH, I
AS
= 24A, V
DD
=50V, R
G
= 25Ω, starting T
J
=25°C
3. I
SD
≤24A,
di/dt≤200A/μs, V
DD
≤BV
DSS
, starting T
J
=25°C
4. Pulse test : pulse width≤300μs, duty cycle≤2%
5. Essentially independent of operating temperature
3 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
24A，500V
N-CHANNEL MOSFET
24N50H
7.Test
circuits and waveforms
4 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
24A，500V
N-CHANNEL MOSFET
24N50H
5 of 5
Rev 1.1 JAN 2014
微控制器 MCU
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