Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Company
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS
MJD112 NPN
MJD117 PNP
DPAK (TO-252)
Plastic Package
The value of internal resistors in P/N
MJD117 are as:
R1 = Typical 10K Ohm
R2 = Typical 150 Ohm
Designed for General Purpose Power and Switching Applications
Built in a Damper Diode at E-C
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Base Current
Total Power Dissipation T
c
=25ºC
Derate Above 25ºC
Total Power Dissipation T
a
=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
P
D
T
j,
T
stg
VALUE
100
100
5
2
4
50
20
0.16
1.75
0.014
- 65 to +150
UNIT
V
V
V
A
A
mA
W
W/ºC
W
W/ºC
ºC
R
th (j-c)
*R
th (j-a)
6.25
71.4
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T
c
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
**V
CEO(sus)
I
C
=30mA, I
B
=0
Collector Emitter Sustaining Voltage
I
CEO
V
CE
=50V, I
B
=0
Collector Cut Off Current
I
CBO
V
CB
=100V, I
E
=0
Collector Cut Off Current
V
CB
=80V, I
E
=0
V
EB
=5V, I
C
=0
I
EBO
Emitter Cut Off Current
V
CE
=80V, V
BE (off)
=1.5V
I
CEX
Collector Cut Off Current
V
CE
=80V, V
BE (off)
=1.5V,
T
c
=125ºC
DC Current Gain
h
FE
I
C
=0.5A, V
CE
=3V
I
C
=2A, V
CE
=3V
I
C
=4A, V
CE
=3V
MIN
100
TYP MAX
20
20
10
2.0
10
500
UNIT
V
µA
µA
µA
mA
µA
µA
500
1000
200
12000
*These rating are applicable when surface mounted on the minimum pad sizes recommended
**Pulse Test:- Pulse Width < 300µs, Duty Cycle < 2%
µ
MJD112_117 Rev220904E
Continental Device India Limited
Data Sheet
Page 1 of 6
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS
MJD112 NPN
MJD117 PNP
DPAK (TO-252)
Plastic Package
ELECTRICAL CHARACTERISTICS (T
c
=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter On Voltage
DYNAMIC CHARACTERISTICS
DESCRIPTION
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
V
CE (sat)
V
BE (sat)
V
BE (on)
TEST CONDITION
I
C
=2A, I
B
=8mA
I
C
=4A, I
B
=40mA
I
C
=4A, I
B
=40mA
I
C
=2A, V
CE
=3V
MIN
TYP MAX
2.0
3.0
4.0
2.8
UNIT
V
V
V
V
SYMBOL
f
T
C
ob
TEST CONDITION
I
C
=0.75A, V
CE
=10V, f=1MHz
I
E
=0, V
CB
=10V, f=0.1MHz
MJD112
MJD117
CDIL
MJD112
XY
MX
MIN
25
TYP MAX
UNIT
MHz
pF
pF
100
200
CDIL
MJD117
XY
MX
MARKING
XY= Date Code
MJD112_117 Rev220904E
Continental Device India Limited
Data Sheet
Page 2 of 6
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