Philips Semiconductors
Product specification
Triacs
BT136 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BT136-
BT136-
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600
600F
600
4
25
V
A
A
UNIT
Passivated triacs in a plastic envelope,
intended for use in applications requiring
high bidirectional transient and blocking
voltage capability and high thermal cycling
performance. Typical applications include
motor control, industrial and domestic
lighting, heating and static switching.
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
tab
SYMBOL
T2
main terminal 2
gate
main terminal 2
1 23
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
mb
≤
107 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 6 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
600
1
4
25
27
3.1
50
50
50
10
2
5
5
0.5
150
125
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
June 2001
1
Rev 1.400
Philips Semiconductors
Product specification
Triacs
BT136 series
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
CONDITIONS
MIN.
-
-
-
TYP.
-
-
60
MAX.
3.0
3.7
-
UNIT
K/W
K/W
K/W
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
CONDITIONS
BT136-
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 5 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 ˚C
V
D
= V
DRM(max)
;
T
j
= 125 ˚C
MIN.
TYP.
...
-
-
-
-
-
-
-
-
-
-
-
0.25
-
5
8
11
30
7
16
5
7
5
1.4
0.7
0.4
0.1
35
35
35
70
20
30
20
30
15
1.70
1.5
-
0.5
MAX.
...F
25
25
25
70
20
30
20
30
15
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
UNIT
I
L
Latching current
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
BT136-
V
DM
= 67% V
DRM(max)
;
T
j
= 125 ˚C; exponential
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 95 ˚C;
I
T(RMS)
= 4 A;
dI
com
/dt = 1.8 A/ms; gate
open circuit
I
TM
= 6 A; V
D
= V
DRM(max)
;
I
G
= 0.1 A; dI
G
/dt = 5 A/µs
...
100
MIN.
...F
50
TYP.
250
MAX.
-
UNIT
V/µs
dV
com
/dt
-
-
50
-
V/µs
t
gt
-
-
2
-
µs
June 2001
2
Rev 1.400
Philips Semiconductors
Product specification
Triacs
BT136 series
8
7
6
5
4
3
2
1
0
Ptot / W
Tmb(max) / C
101
104
5
IT(RMS) / A
1
= 180
120
90
60
30
107
110
113
116
119
4
107 C
3
2
1
122
0
1
2
3
IT(RMS) / A
4
125
5
0
-50
0
50
Tmb / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
IT(RMS) / A
1000
ITSM / A
IT
T
ITSM
12
10
time
Tj initial = 25 C max
100
dI
T
/dt limit
8
6
4
T2- G+ quadrant
2
10
10us
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
107˚C.
VGT(Tj)
VGT(25 C)
30
25
20
15
10
5
0
ITSM / A
BT136
1.6
IT
T
I TSM
time
1.4
1.2
1
0.8
0.6
0.4
-50
Tj initial = 25 C max
1
10
100
Number of cycles at 50Hz
1000
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
June 2001
3
Rev 1.400
Philips Semiconductors
Product specification
Triacs
BT136 series
3
2.5
2
1.5
1
0.5
IGT(Tj)
IGT(25 C)
T2+ G+
T2+ G-
T2- G-
T2- G+
12
10
IT / A
Tj = 125 C
Tj = 25 C
Vo = 1.27 V
Rs = 0.091 ohms
typ
max
8
6
4
2
0
0
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
10
Zth j-mb (K/W)
unidirectional
bidirectional
3
2.5
1
2
1.5
1
0.5
0
-50
0.01
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
0.1
P
D
tp
t
0
50
Tj / C
100
150
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25C)
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
dVcom/dt (V/us)
1000
off-state dV/dt limit
3
2.5
BT136 SERIES
2
1.5
1
0.5
0
-50
100
BT136...F SERIES
10
dIcom/dt = 5.1 3.9
A/ms
0
50
Tj / C
100
150
3
2.3
1.8
100
1.4
150
1
0
50
Tj / C
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
T
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
June 2001
4
Rev 1.400
Philips Semiconductors
Product specification
Triacs
BT136 series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
1 2 3
(2x)
2,54 2,54
0,9 max (3x)
0,6
2,4
Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
June 2001
5
Rev 1.400
嵌入式系统
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