DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
1N5817; 1N5818; 1N5819
Schottky barrier diodes
Product specification
Supersedes data of April 1992
1996 May 03
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES
•
Low switching losses
•
Fast recovery time
•
Guard ring protected
•
Hermetically sealed leaded glass
package.
APPLICATIONS
•
Low power, switched-mode power
supplies
•
Rectifying
•
Polarity protection.
handbook, 4 columns
1N5817; 1N5818; 1N5819
DESCRIPTION
The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar
technology, and encapsulated in SOD81 hermetically sealed glass packages
incorporating Implotec
TM(1)
technology.
(1) Implotec is a trademark of Philips.
k
a
MAM218
Fig.1 Simplified outline (SOD81) and symbol.
1996 May 03
2
Philips Semiconductors
Product specification
Schottky barrier diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
1N5817
1N5818
1N5819
V
RSM
non-repetitive peak reverse voltage
1N5817
1N5818
1N5819
V
RRM
repetitive peak reverse voltage
1N5817
1N5818
1N5819
V
RWM
crest working reverse voltage
1N5817
1N5818
1N5819
I
F(AV)
I
FSM
average forward current
non-repetitive peak forward current
PARAMETER
continuous reverse voltage
1N5817; 1N5818; 1N5819
CONDITIONS
−
−
−
−
−
−
−
−
−
−
−
−
T
amb
= 55
°C;
R
th j-a
= 100 K/W;
note 1; V
R(equiv)
= 0.2 V; note 2
t = 8.3 ms half sine wave;
JEDEC method;
T
j
= T
j max
prior to surge: V
R
= 0
−
−
MIN.
MAX.
20
30
40
24
36
48
20
30
40
20
30
40
1
25
V
V
V
V
V
V
V
V
V
V
V
V
A
A
UNIT
T
stg
T
j
Notes
storage temperature
junction temperature
−65
−
+175
125
°C
°C
1. Refer to SOD81 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
P
R
and I
F(AV)
rating will be available on request.
1996 May 03
3
Philips Semiconductors
Product specification
Schottky barrier diodes
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
1N5817
see Fig.2
I
F
= 0.1 A
I
F
= 1 A
I
F
= 3 A
V
F
forward voltage
1N5818
see Fig.2
I
F
= 0.1 A
I
F
= 1 A
I
F
= 3 A
V
F
forward voltage
1N5819
see Fig.2
I
F
= 0.1 A
I
F
= 1 A
I
F
= 3 A
I
R
C
d
reverse current
diode capacitance
1N5817
1N5818
1N5819
Note
1. Pulsed test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOD81 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
V
R
= V
RRMmax
; note 1
V
R
= V
RRMmax
; T
j
= 100
°C
V
R
= 4 V; f = 1 MHz
CONDITIONS
1N5817; 1N5818; 1N5819
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
TYP.
MAX.
320
450
750
330
550
875
340
600
900
1
10
−
−
−
UNIT
mV
mV
mV
mV
mV
mV
mV
mV
mV
mA
mA
pF
pF
pF
80
50
50
CONDITIONS
note 1
VALUE
100
UNIT
K/W
1996 May 03
4
Philips Semiconductors
Product specification
Schottky barrier diodes
GRAPHICAL DATA
1N5817; 1N5818; 1N5819
handbook, halfpage
5
MBE634
IF
(A)
4
Tj = 125 oC
25 oC
3
2
1
0
0
0.5
VF (V)
1
Fig.2 Typical forward voltage.
1
a=3
PF(AV)
(W)
2.5
2
1.57
1.42
1
MBE642
0.5
0
0
0.5
1
1.5
IF(AV) (A)
2
Fig.3
1N817. Maximum values steady state forward power dissipation as a function of the average forward
current; a = I
F(RMS)
/I
F(AV).
5
1996 May 03
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